RFH25N18 ETC
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G E SOLID STATE OL deff 3875082 Coveias 3 ff ._ 3875081 G E SOLID STATE O1E 18185 = CT*39-/3 RFH25N18, RFH25N20 File Number 1631 Power MOS Field-Effect Transistors . TERMINAL DIAGRAM N-Channel Enhancement-Mode Power Field-Effect Transistors
25 A, 180 V - 200 V
tostew = 0.15.2 Features: ° . = SOA is power-dissipation limited = Nanosecond switching speeds «= Linear transfer characteristics : ® High input impedance 92C3-33761 = Majority carrier device = High-current, low-inductance package N-CHANNEL ENHANCEMENT MODE ‘The RFH25N18 and RFH25N20* are n-channel enhance- ment-mode silicon-gate power field-effect transistors TERMINAL DESIGNATION designed for applications such as switching regulators, RFH25N18 ‘SOURCE ‘switching converters, motor drivers, relay drivers, and RFH25N20_ _ drivers for high-power bipolar switching transistors [-——_4., requiring high speed and low gate-drive power. These types y ‘DRAIN, can be operated directly from integrated circuits. oma N The RFH-types are supplied in the JEDEC TO-218AC Ny plastic package. N _.—— —-- Tare \\. *The RFH25N18 and RFH25N20 types were formerly RCA developmental numbers TA9483A and TA9483B ‘9208-39987 respectively. SEDEC TO-218AC . RFH25N18 = RFH25N20 Derate above Tc = 25°C 1.2 were
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RFH25N18, RFH25N20 ELECTRICAL CHARACTERISTICS, at Case Temperature (Tc) = 25°C unless otherwise specified. TEST CHARACTERISTIC SYMBOL | CONDITIONS [__arnasnie | nrH25N20 | UNITS Drain-Source Breakdown BVoss lo= 1 mA v Voltage Vos = 0 Gate Threshold Voltage Vas(th) Vas = Vos E lo= 1 mA Zero Gate Voltage Drain Vos = 145V Current Vos = 160 V To= 125°C uA Vos = 145 V Vos = 160 V Gate-Source Leakage Vos = + 20V nA Current . Vos = 0 Drain-Source On Voltage To= 125A 1876 Vas = 10V lp = 25A Vos = 10 V Static Drain-Source On 1o= 125A 15 Resistance Vos = 10V Forward Transconductance Vos = 10V 7 Ip=12.5A Tnput Capacitance [Gu | Voss2sv [= | aso0_ [= | 3500_| Output Capacitance Vessov [~=] 80 [= [00] pr. Reverse Transfer Copacianco [Cue | “t= 1mnz [— | ~a00_[ — | 0_| “Turn-On Delay Time Vee= 1000 | aa(yp | 60 | a0(wp) | 60 — | [ RiseTime Tt | to 125A | ib0ityp) | 225 | s0(typ) | 225 | [_Turs-oW Delay Tine | off) —] Pee-Rewr80n [S00(typ) | 400 | S00ttye) | 400 | Fall Time Vos= tov | 720(typ) |" 200 | r2oityp) | 200 | Thermal Resistance RFH25NT6, Junction-to-Case RFH25N20 0.83 | °C/W Series . Pulsed: Pulse duration = 300 ws max., duty cycle = 2%. ‘SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Limits . CHARACTERISTIC TEST CONDITIONS | rrrzswte | RFH25N20 | UNITS * Pulse Test: Width < 300 ys, Duty cycle < 2%,
SS 0018187 7? Ol Def) 3875081 G E SOLID STATE ee | , - 3875081 G E SOLID STATE O1E 18187 0 7-39-/3 Standard Power MOSFETs =a RFH25N18, RFH25N20 : eters ag lst cges ozs mor ae nese of SY Aa cca mere Fae ese see erty PN en To EP SSS ee | es Elms Ra8i emis pe Senet Se oe Sea WSS Ese eet esses tisk SeeS=et! ’ | SSS Sea 1 0 100 1000 : ORAM-TO-SOURCE VOLTAGE (Vpgl—-V sacaserr Fig. 1 - Maximum safe operating areas for all types. . ETRE ea eg nn Se ee en ron Terenarne re Fig. 2 - Power vs. temperature derating ourve for all types. Fig. 3 - Typical normalized gate threshold voltage as afunctionof : junction temperature fore types. : cron reurenarne ty) =e " eate-o-sounée voumet g)—=v Fig. 4- Normalized drain-to-source on resistance to junction Fig. 8 - Typical transfer characteristics for all types. temperature for all types. 130 - I
ol vey 3875081 0018188 9 T : . 3875081 G E SOLID STATE O1E 18188 §6oT- 39-13 Standard Power MOSFETS RFH25N18, RFH25N20 : Fig. 6 - Normalized switching waveforms for constant gate-current Fig. 7 - Typical saturation characteristics for all types. drive. jf oof SER TRRAREH oS le sued oaseeuiil aye eadidsasatansscanstoedt stata H tooo (Eats TEE EI nun ane eal aii a ae sean came 5) eA 1-200 VLTAE ag) Fig. 8 - Typical drain-to-source on resistance as @ function of Fig. 9 - Capacitance as a function of drain-to-source voltage for drain current for all types. all types. ae oceanic eee EEE py APR Eaeeei tee trees | oa HAH TH HEHEHE ES Littman IL. 2=aIaT szonanee ede Fig. 10 - Typical forward transconductance as a function of drain Fig. 11 - Switching Time Test Circuit. current for all types. —— 131
1 re | 3875081 0018189 0 ii . _ 3875081 G E SOLID STATE O1E 18189 D7T-39-(3 Standard Power MOSFETs RFK25N18, RFK25N20 File Number 1500 N-Channel Enhancement-Mode Power Field-Effect Transistors 5
25 A, 180 V- 200 V
Tos(on) = 0.15Q [ Features: °
8 SOA is power-dissipation limited
§ Nanosecond switching speeds © Linear transfer characteristics 3 High input impedance s2ca-ssTel ‘® Majority carrier device N-CHANNEL ENHANCEMENT MODE The RFK25N18 and RFK25N20* are n-channel enhance- TERMINAL DESIGNATIONS ment-mode silicon-gate power field-effect transistors de- signed for applications such as switching regulators, switch- onan ing converters, motor drivers, relay drivers, and drivers for ‘SOURCE (FLANGE) high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be oper- © ated directly from integrated circuits. ® The RFK-types are supplied in the JEDEC TO-204AE steel a Package. GATE 92cs-3780! “The RFK25N18 and RFK25N20 types were formerly RCA JEDEC TO-204AE developmental numbers TAG235A and TAG20SB, respectively . ° RFK25N18 RFK25N20 DRAIN-GATE VOLTAGE, Poet MA ssscssscscccscsccssocsensesess Voom 10 200 v ‘GATE-SOURCE VOLTAGE 2.2... 60s eceesereeeee en: er ‘£20 ————sa v DRAIN CURRENT, RMS Continuous sssssscscsssssssvsssesesee fg 8 A POWER DISSIPATION @ T2280 oop Dot Derate above Te=25"C —— oe TOT wre 492,
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— Standard Power MOSFETs RFK25N18, RFK25N20 ELECTRICAL CHARACTERISTICS, At Case Temperature (Te)=25°C unless otherwise specified. CHARACTERISTICS [RFK25Nis | _RFK25N20_ | CONDITIONS | MN. [ MAX. | MIN. | MAX. | Drain-Source Breakdown Voltage BV 7 [Drrsouesreskcownvoteoe | Bvoe [ia ae Gate Threshold Voltage Vos=Ve Vv [saerwenoaveroe em [sm | 2 fe te Tt | Zero Gate Voltage Drain Current Vos=145 V vay | =] 2 T= Ts | Te=125°C uA Vos" 145 V Vos=160 V_ Gate-Source Leakage Current Vas=+20 V [Saeseucetentascurent | me | Magy | Tm [| | ‘Drain-Source On Voltage Vos(on)* 1o=12.5A [ - | 1p=25 A ~ ‘Static Drain-Source On Resistance Forward Transconductance Vos=10 V 7 7 [Fore ereincicance [oT ease P| | T= [| [Output Capacitance] Cos | «|S Voss =f = 900 | 900 |p [Tum-OnDelayTime | tafon) | Voo=t00V | 40(typ) | 80 | a0) | 80_| [RiseTime Tt | 125A —[150(typ)| 225 | 150(typ) | 225 | | Turn-O1f Delay Time | tafoff) | Raw=Rys=50 [300(typ)| 400 | 300(typ) | 400 | [FaTime Tt | Veg=t0v___[ 42 00typ) {200 | 120109) | 200 | Pau [atti] =" Do | Junction-to-Case RFK25N20 Series CW “Pulsed: Pulse duration = 300 us max., duty cycle = 2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS [irs TEST CHARACTERISTIC «| SYMBOL | conpitions |RFK2s5N1a | _RFK25N20_| [min | MAX. | MIN. | MAX. | Diode Forward Voltage [Veo | tevez | — J a | — a |v sve) | sone [we | *Pulse Test: Width = 300 us, duty cycle = 2%.
G E SOLID STATE 01 Def) 3875082 Oo1e192 9 ii “3875081 GE SOLID STATE O1E 18191 0 7=39-/3 RFK25N18, RFK25N20 106 «SESE SESS STEIESES case Tewrenavone (Te) -25° pee es eee eee < ee SERS hiss eae aL Eee ney So PSRs Heer roan 1 . wf “0 100 1000 onAIN-T0-SOURCE VOLTAGE (¥oq)—V Fig. 1 — Maximum safe operating areas forall types. FEE Etre EET Pama ereaesacictitentencenreete eine EHH EET reer EEE FESS ESE ESE
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Fig, 2 — Power vs. temperature derating curve for all types. Fig. 3 — Typical normalized gate threshold voltage as a function offunction temperature Tor al types. ee LU Beene ee ttt He Ig Joeteon TEAPEMATIRE TE) caTe-o-400he vLTot w= ¥ Fig. 4 — Normalized drain-to-souree on resistance to junction Fig. — Typical transfor characteristics forall types temperature for all types. . ; . a 134 + —
G E SOLID STATE -_ 01 DEP 3875081 oolelq2 o ff : 3875081 G E SOLID STATE _ O1E 18192 07=39-/3 RFK25N18, RFK25N20 ‘einen, ey ee ee) oF aT me Oe © gaun=ro-s0une VOLT Ceg)=¥ Fig. 6- Normalized switching wavotormsorconstant gete-current Fig. 7 — Typical saturation characteristics forall ypes. drive. ie psuatcaatteassceassenaUinat seapnasinacstieti adie H ooo RES UE VSLSTS TE a ET, aie eee See am ia Ce a le can coment Gah emaNTo-9RCEVOLTHOE is)“ Fig, 8 — Typical drain-to-source on resistance as a function Fig. 9 — Capacitance as a function of drain-to-source of drain current for all types. voltage for ail types. . fe Elise, pare RTT EHH oct gra % Fig. 10 — Typical forward transconductance as a function Fig. 11 — Switching Time Test Circuit ofarain current forall types. —_—_ ences ne nee 9985