RFG70N06 ISC

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor RFG70N06

  • FEATURES
  • WithTO-247 packaging
  • UISratingcurve
  • Peakcurrentvs pulsewidthcurve
  • Highpower and currenthandling capability
  • 100% avalanchetested
  • MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
  • APPLICATIONS
  • Highcurrentswitchingapplications
  • ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 60 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous@TC=25℃ 70 A IDM DrainCurrent-SinglePulsed 450 A PD TotalDissipation 150 W Tch Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
  • THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 1.0 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 80 ℃/W

iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor RFG70N06 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 60 V VGS(th) GateThresholdVoltage VDS= ±20V;ID=0.25mA 2 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=70A 14 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakage Current VDS=60V;VGS=0V；TJ=25℃ TJ=125℃ 50 μA VSDF Diodeforwardvoltage ISD=70A,VGS =0V 1.5 V