RDD020N60 ROHM
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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10V Drive Nch MOSFET RDD020N60 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. Application Switching Packaging specifications Inner circuit Package Taping Code TL Basic ordering unit (pieces) 2500 RDD020N60 Absolute maximum ratings (Ta = 25C) Symbol Limits Unit Drain-source voltage V DSS 600 V Gate-source voltage V GSS 30 V Continuous I D 2A Pulsed I DP 6A Continuous I S 2A Pulsed I SP 6A Avalanche current IAS 2A Avalanche energy EAS 1m J Power dissipation P D 20 W Channel temperature T ch 150 C Range of storage temperature T stg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, Tch=25C *3 Limited only by maximam temperature allowed *4 TC=25°C Thermal resistance Symbol Limits Unit Channel to Case R th (ch-c) 6.25 C / W Parameter Type Source current (Body Diode) Drain current Parameter (1) Gate (2) Drain (3) Source 1 BODY DIODE CPT3 (SC-63) <S OT -428> 6.5 2.3(2) (3) 0.65 0.9 (1) 0.75 2.3 0.9 5.1 1.55.5 2.3 0.5 1.0 0.5 9.5 2.5 0.8Min. 1.5 (1) (3)(2) (1) Gate (2) Drain (3) Source 1/6 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RDD020N60 Electrical characteristics (Ta = 25C) Symbol Min. Typ. Max. Unit Gate-source leakage I GSS -- 100 nA V GS=30V, VDS=0V Drain-source breakdown voltage V (BR)DSS 600 - - V I D=1mA, VGS=0V Zero gate voltage drain current I DSS - - 100 AV DS=600V, VGS=0V Gate threshold voltage V GS (th) 2.5 - 4.7 V V DS=10V, ID=1mA Forward transfer admittance l Y fs l 0.5 - - S V DS=10V, ID=1A Input capacitance C iss - 175 - pF V DS=25V Output capacitance C oss - 25 - pF V GS=0V Reverse transfer capacitance C rss - 3 - pF f=1MHz Turn-on delay time t d(on) - 17 - ns V DD 300V, ID=1A Rise time t r - 14 - ns V GS=10V Turn-off delay time t d(off) - 25 - ns R L=300 Fall time t f - 53 - ns R G=10 Total gate charge Q g - 7.0 - nC V DD 300V Gate-source charge Q gs - 2.1 - nC I D=2A Gate-drain charge Qgd - 3.2 - nC V GS=10V *Pulsed Body diode characteristics (Source-Drain) Symbol Min. Typ. Max. Unit Forward Voltage V SD - - 1.5 V I S=2.0A, VGS=0V *Pulsed 6.5 Parameter Conditions Conditions Parameter Static drain-source on-state resistance RDS (on) ID=1A, VGS=10V- 5.1 2/6 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RDD020N60 Electrical characteristic curves (Ta=25C) 0.5 1.5 0 1 2 3 4 5 6 7 8 9 10 Drain Current : ID [A] Drain-Source Voltage : VDS [V] Fig.1 Typical Output Characteristics (Ⅰ) VGS=10.0V VGS=4.0V VGS=5.0V VGS=6.0V VGS=8.0V VGS=5.5V Ta=25℃ pulsed 0.00001 0.0001 0.001 0.01 0.1 0 1 2 3 4 5 6 7 8 9 10 Drain Currnt : ID [A] Gate-Source Voltage : VGS [V] Fig.3 Typical Transfer Characteristics VDS=10V pulsed Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ -50 -25 0 25 50 75 100 125 150 Gate Threshold Voltage : VGS(th) [V] Channel Temperature : Tch [℃] Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed 0.01 0.1 100 0.01 0.1 1 10 Static Drain-Source On-State Resistance RDS(on) [Ω] Drain Current : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current VGS=10V pulsed Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ -50 -25 0 25 50 75 100 125 150 Static Drain-Source On-State Resistance : RDS(on) [Ω] Channel Temperature : Tch [℃] Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature VGS=10V pulsed ID=2A ID=1A 0.5 1.5 0 5 10 15 20 25 30 35 40 45 50 Drain Current : ID [A] Drain-Source Voltage : VDS [V] Fig.2 Typical Output Characteristics (Ⅱ) VGS=10.0V VGS=4.0V VGS=5.0V VGS=5.5V VGS=6.0V VGS=8.0V Ta=25℃ pulsed 3/6 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RDD020N60 0.01 0.1 0.01 0.1 1 10 Forward Transfer Admittance Yfs [S] Drain Current : ID [A] Fig.7 Forward Transfer Admittance vs. Drain Current VDS=10V pulsed Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.01 0.1 0.0 0.5 1.0 1.5 Source Current : IS [A] Source-Drain Voltage : VSD [V] Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0 2 4 6 8 10 12 14 16 18 20 Static Drain-Source On-State Resistance RDS(on) [W] Gate-Source Voltage : VGS [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage ID=2A ID=1A Ta=25℃ pulsed 100 1000 0.1 1 10 Switching Time : t [ns] Drain Current : ID [A] Fig.10 Switching Characteristics td(on) tr td(off) tf VDD=300V VGS=10V RG=10Ω Ta=25℃ Pulsed 0 1 2 3 4 5 6 7 8 9 10 Gate-Source Voltage : VGS [V] Total Gate Charge : Qg [nC] Fig.11 Dynamic Input Characteristics Ta=25℃ VDD=300V ID=2A Pulsed 100 1000 10000 0.01 0.1 1 10 100 1000 Capacitance : C [pF] Drain-Source Voltage : VDS [V] Fig.12 Typical Capacitance vs. Drain-Source Voltage Ta=25℃ f=1MHz VGS=0V Ciss Coss Crss 4/6 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RDD020N60 100 1000 0.1 1 10 Reverse Recovery Time : trr [ns] Source Current : IS [A] Fig.13 Reverse Recovery Time vs. Source Current Ta=25℃ Vgs=0V di/dt=100A/μs Pulsed 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Transient Thermal Resistance : r（t） Pulse width : Pw (s) Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width Ta=25℃ Single Pulse Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=44.5℃/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 100 0.1 1 10 100 1000 Drain Current : ID [ A ] Drain-Source Voltage : VDS [ V ] Fig.15 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs PW = 1ms PW = 10ms Ta=25℃ Single Pulse 5/6 2011.10 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RDD020N60 Measurement circuits Fig.1-1 Switching Time Measurement Circuit VGS RG VDS D.U.T. ID RL VDD Fig.1-2 Switching Waveforms 90% 90% 90% 10% 10% 50% 10% 50% VGS Pulse width VDS ton toff trtd(on) tftd(off) Fig.2-1 Gate Charge Measurement Circuit VGS IG(Const.) VDS D.U.T. ID RL VDD Fig.2-2 Gate Charge Waveform VG VGS Charge Qg Qgs Qgd Fig.3-1 Avalanche Measurement Circuit VGS RG VDS D.U.T. IAS L VDD Fig.3-2 Avalanche Waveform IAS VDD V(BR)DSS IAS LEAS = V(BR)DSS - VDD V(BR)DSS1 6/6 2011.10 - Rev.A
R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://ww w.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes