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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LT D SOT-523 Plastic-Encapsulate Diodes R B 7 1 5W SCHOTTKY BARRIER DIODE FEATURES: Extra Small Power Mold T ype Low V F High Reliability MARKING: 3D Maximum Ratings @Ta=25 Parameter Symbol Limit Unit Peak reverse voltage VRM 40 V DC reverse v oltage VR 40 V 1RQUHSHWLWLYHPeak )orward 6 urge &urrent#W PV IFSM 200 mA Average fo rward current IO 30 mA Power dissi pation PD 150 mW Junction temperat ure Tj 125 ℃ Storage temperature Tstg -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless other wise specified) Parameter Symbol T e st conditions Min Typ Max Unit Reverse v oltage leakage current IR V R=10V 1 μA Forward vo ltage VF IF=1mA 0.37 V Capacitance bet ween terminals CT VR=1V, f=1MHz 2.0 pF SOT-523 Thermal Resistance from RθJA 667 Junction to Ambient ℃/ W www.cj-elec.com 1 D,Oct,2015 Solid dot = Green molding compound device,if none, the normal device.
0.01 0.1 100 01 0 2 0 3 0 4 0 100 1000 0 5 10 15 20 Forward Characteristics Reverse Characteristics Power Derating Curve POWER DISSIPATION PD (mW) AMBIENT TEMPERATURE Ta ( )℃ Ta=100℃ Ta=25℃ FORWARD CURRENT IF (mA) FORWARD VOLTAGE VF (V) Ta=100℃ Ta=25℃ REVERSE CURRENT IR (nA) REVERSE VOLTAGE VR (V) Ta=25℃ f=1MHz Capacitance Characteristics REVERSE VOLTAGE VR (V) CAPACITANCE BETWEEN TERMINALS CT (pF) Typical Characteristics www.cj-elec.com 2 D,Oct,2015
Min. Max. M in. Max. A 0.700 0.900 0.028 0.035 A1 0.000 0.100 0.000 0.004 A2 0.700 0.800 0.028 0.031 b1 0.150 0.250 0.006 0.010 b2 0.250 0.350 0.010 0.014 c 0.100 0.200 0.004 0.008 D 1.500 1.700 0.059 0.067 E 0.700 0.900 0.028 0.035 E1 1.450 1.750 0.057 0.069 e e1 0.900 1.100 0.035 0.043 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.400 REF. 0.016 REF. Symbol Dimensions In Millimeters Dimensions In Inches 0.500 TYP. 0.020 TYP. SOT-523 Suggested Pad Layout www.cj-elec.com 3 D,Oct,2015www.cj-elec.com
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