RB501V-40 ROHM
Document overview
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Technical content
!!!!Applications Low current rectification !!!!Features 1) Small surface mounting type. (UMD2) 2) Low VF. (VF=0.43V Typ. at 100mA) 3) High reliability. !!!!Construction Silicon epitaxial planar !!!!External dimensions (Units : mm) ∗There are two different markings. 2.5±0.2 1.7±0.1 1.25±0.1 CATHODE MARK −0.1 +0.20.7 +0.1 −0.050.10.3±0.05 2.5±0.2 1.7±0.1 1.25±0.1 CATHODE MARK −0.1 +0.20.7 +0.1 −0.050.10.3±0.05 ROHM : UMD2 EIAJ : SC-76 JEDEC : SOD-323 !!!!Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM V DC reverse voltage VR V Mean rectifying current IO 0.1 A Peak forward surge current∗ IFSM 1A Junction temperature 125 °C Storage temperature °C −40~+125 Tj Tstg ∗ 60 Hz for 1 !!!!Electrical characteristics (Ta = 25°C) Note) ESD sensitive product handling required. Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF1 − 0.55 V I F=100mA Forward voltage VF2 − 0.34 V I F=10mA Reverse current IR − 30 µAV R=10V Capacitance between terminals − 6.0 − pF V R=10V, f=1MHzCT
!!!!Electrical characteristic curves (Ta = 25°C) 1000FORWARD CURRENT : IF (mA) 100 FORWARD VOLTAGE : VF (V) Fig. 1 Forward characteristics 125 −25 °C75 REVERSE CURRENT : R (A) REVERSE VOLTAGE : VR (V) 4010 20 30 0.1 10m 100µ 10µ Fig. 2 Reverse characteristics 125°C 75°C 25°C 100 5 1 01 52 02 53 03 5 CAPACITANCE BETWEEN TERMINALS : CT (pF) REVERSE VOLTAGE : VR (V) Fig. 3 Capacitance between terminals characteristics 100 25 50 75 100 125 Io CURRENT (%) AMBIENT TEMPERATURE : Ta (°C) Fig. 4 Derating curve (mounting on glass epoxy PCBs)