RB441Q-40 ROHM
Document overview
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Technical content
!!!!Applications Low current rectification !!!!Features 1) Glass sealed envelope for high reliability. (MSD) 2) Small pitch enables insertion on PCBs. 3) Low V F.(VF=0.45V Typ. at 100mA) !!!!Construction Silicon epitaxial planar !!!!External dimensions (Units : mm) φ1.8±0.2 φ0.4±0.1 AC 29±12.7±0.329±1 ROHM : MSD EIAJ : − JEDEC : DO-34 CATHODE BAND (BLACK) Product identification number “S3” is stamped on body of main unit.!!!!Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 40 V Mean rectifying current IO 0.1 A Peak forward surge current IFSM 1A Junction temperature Tj 125 °C Storage temperature Tstg °C−40~+125 !!!!Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF1 −− 0.34 V I F=10mA Forward voltage VF2 −− 0.55 V I F=100mA Reverse current IR −− 100 µAV R=40V Capacitance between terminals − 6.0 − pF V R=10V, f=1MHz Note) ESD sensitve product handling required. CT
!!!!Electrical characteristic curves (Ta = 25°C) 100m 10m 100µ Ta =125 −25 pulse measurement Typ. FORWARD CURRENT : IF (A) FORWARD VOLTAGE : VF (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics 0 5 10 15 20 25 30 35 10m 100µ 10µ 0.1µ pulse measurement REVERSE CURRENT : IR (A) REVERSE VOLTAGE : VR (V) Typ. Ta=125°C 75°C 25°C 0 5 10 15 20 251 100 1000CAPACITANCE BETWEEN TERMINALS : CT (pF) REVERSE VOLTAGE : VR (V) Fig. 3 Capacitance between terminals characteristics 1 10 100 1000 FORWARD SURGE CURRENT : IF Surge (A) PULSE WIDTH (mS) Fig. 4 Forward surge current characteristics P=50% 0 0.5 0.1 0.2 0.3 0.4 0.5 POWER DISSIPATION : PF (W) AVERAGE FORWARD CURRENT : IO (A) Fig. 5 Mean rectifying current characteristics Sine wave (Tj=25°C) DC (Tj=25°C) 100 25 50 75 100 125 Io CURRENT (%) AMBIENT TEMPERATURE : Ta (°C) Fig. 6 Derating curve (mounting on glass epoxy PCBs)