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Technical content
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes RB 425D SCHOTTKY BARRIER DIODE
FEATURES
Small Surface Mounting Type Low VF High Reliability
APPLICATIONS
Low Power Rectification MARKING: D3L MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VR Co ntinuous Reverse Voltage 40 V IO C ontinuous Forward Current 100 mA IFS M Non-repetitive Peak Forward Surge Current@t=8.3ms 1 A PD Po wer Dissipation 250 mW RθJ A Thermal Resistance from Junction to Ambient 400 ℃/W Tj Jun ction Temperature 125 ℃ Tst g Storage Temperature -55~+150 ℃ EL ECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Re verse voltage V(BR) I R=100μA 40 V Re verse current IR V R=10V 30 μA IF=1 00mA 0.55 Fo rward voltage VF IF=10mA 0.34 V To tal capacitance Ctot V R=10V,f=1MHz 6 pF SO T-23 1 D,Oct,2015www.cj-elec.com
0.01 0.1 100 1000 Ta=25℃ f=1MHz Capacitance Characteristics Per Diode CAPACITANCE BETWEEN TERMINALS CT (pF) REVERSE VOLTAGE VR (V) Power Derating Curve POWER DISSIPATION PD (mW) AMBIENT TEMPERATURE Ta ( )℃ Forward Characteristics FORWARD VOLTAGE VF (mV) FORWARD CURRENT IF (mA) Ta=2 Ta=100 ℃ Ta=75 ℃ Reverse Characteristics REVERSE VOLTAGE VR (V) REVERSE CURRENT IR (uA) Ta=25 ℃ Ta=100 ℃ Typical Characteristics www.cj-elec.com 2 D,Oct,2015
A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SOT-23 Suggested Pad Layout www.cj-elec.com 3 AJun,2014www.cj-elec.com D,Oct,2015
www.cj-elec.com 4 A,Jun,2014www.cj-elec.com D,Oct,2015