RB400D ROHM
Document overview
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Technical content
!!!!Applications High frequency rectification Switching power supply !!!!Features 1) Small surface mounting type. (SMD3) 2) Low IR. (IR=1µA Typ.) 3) High reliability. !!!!Construction Silicon epitaxial planar !!!!Circuit !!!!External dimensions (Units : mm) (All leads have the same dimensions) 2.8±0.2 1.6 0.3~0.6 0.150.4 0~0.1 1.1 0.8±0.1 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 −0.1 +0.2 −0.1 +0.1 −0.06+0.1 −0.05 ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 D 3 A !!!!Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 40 V Mean rectifying current IO 0.5 A Peak forward surge current IFSM 3A Junction temperature Tj 125 °C Storage temperature Tstg °C−40~+125 !!!!Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF −− 0.55 V I F=0.5A Reverse current IR1 −− 50 µAV R=30V IR2 −− 30 µAV R=10V Capacitance between terminals Ct − 125 − pF V R=0V, f=1MHz Note) ESD Sensitive product handling required. Ct − 20 − pF V R=10V, f=1MHz
!!!!Electrical characteristic curves (T a = 25°C) 10µ 100µ 10m 100m FORWARD CURRENT : IF (A) FORWARD VOLTAGE : VF (V) Ta=125 −25 Typ. pulse measurement Fig.1 Forward characteristics Ta=125°C Ta=75°C Ta=25°C Typ. pulse measurement 10m 100µ 10µ 0.1µ0 5 10 15 20 25 30 35 REVERSE CURRENT : IR (A) REVERSE VOLTAGE : VR (V) Fig.2 Reverse characteristics 100 1 000 5 1 01 52 02 5 REVERSE VOLTAGE : VR (V) CAPACITANCE BETWEEN TERMINALS : CT (pF) Fig.3 Capacitance between terminals characteristics 0 25 125 0.5 POWER DISSIPATION : Pd (W) AMBIENT TEMPERATURE : Ta (°C) Fig.4 Derating curve