RB161M-20TR ROHM

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB161M-20 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification Features 1)Small power mold type.（PMDU） 2)Low VF 3)High reliability Construction Silicon epitaxial planar Structure Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25°C) Symbol Unit VRM V VR V Io A IFSM A Tj C Tstg C Electrical characteristic (Ta=25°C) Symbol Min. Typ. Max. Unit VF1 - 0.28 0.32 V I F=0.5A VF2 - 0.31 0.35 V I F=1.0A IR - 280 700 μA VR=20V Parameter Limits Reverse voltage (repetitive peak) 25 Reverse voltage (DC) 20 Average rectified forward current 1 Forward current surge peak (60Hz・1cyc) 30 Junction temperature 125 Storage temperature 40 to 125 (*1)Mounted on epoxy board. 180°Half sine wave Parameter Reverse current Conditions Forward voltage PMDU 1.2 3.05 0.85 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.9±0.1 1.6±0.1 2.6±0.1 3.5±0.2 0.8±0.1 0.1±0.1 0.05 3.5±0.05 1.75±0.1 8.0±0.2 0.25±0.05 1.5MAX 3.71±0.1 1/3 2011.04 - Rev.B

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB161M-20 AVE:11.7ns Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(uA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS trr DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) 0.001 0.01 0.1 0 100 200 300 400 500 600 Ta=-25℃ Ta=125℃ Ta=75℃ Ta=25℃ 100 1000 10000 100000 1000000 0 5 10 15 20 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 100 1000 0 5 10 15 20 25 30 f=1MHz 300 310 320 330 340 350 AVE:311.1mV Ta=25℃ IF=1A n=30pcs 100 200 300 400 500 600 700 800 900 1000 Ta=25℃ VR=20V n=30pcs AVE:283.1uA 300 310 320 330 340 350 360 370 380 390 400 AVE:351.2pF Ta=25℃ f=1MHz VR=0V n=10pcs 100 150 AVE:65.0A 100 1 10 100 8.3ms Ifsm 1cyc 8.3ms 100 150 0.1 1 10 100 t Ifsm 100 1000 0.001 0.1 10 1000 Rth(j-a) Rth(j-c) Mounted on epoxy board 0.2 0.4 0.6 0.8 00 . 511 . 52 DC D=1/2 Sin(θ＝180) 8.3ms Ifsm 1cyc 1ms IM=100mA IF=1A 300us time 2/3 2011.04 - Rev.B

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB161M-20REVERSE POWER DISSIPATION:PR (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 0 5 10 15 20 Sin(θ＝180) DC D=1/2 0.5 1.5 2.5 0 25 50 75 100 125 Sin(θ＝180) DC D=1/2 0.5 1.5 2.5 0 2 55 07 5 1 0 0 1 2 5 Sin(θ＝180) DC D=1/2 T Tj=125℃ D=t/Tt VR Io VR=10V T Tj=125℃ D=t/Tt VR Io VR=10V C=200pF R=0Ω C=100pF R=1.5kΩ AVE:6.90kV No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) ESD DISPERSION MAP 3/3 2011.04 - Rev.B

R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://ww w.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes