RB161L-40 ROHM
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Technical content
High frequency rectification For switching power supply zFeatures 1) Compact power mold type. (PMDS) 2) Ultra low VF.( VF=0.35V Typ. at 1A) 3) VRM=40V guaranteed. zConstruction Silicon epitaxial planar zzzzExternal dimensions (Units : mm) 0.1 CATHODE MARK 4.5±0.2 2.6±0.2 2.0±0.2 1.2±0.3 1.5±0.2 5.0±0.3 +0.02 −0.1 ROHM : PMDS EIAJ : − JEDEC : SOD-106 Date of manufacture EX. 1999.12 → 9, C zzzzAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Limits Unit VPeak reverse voltage VR 20 VDC reverse voltage IO 1AMean rectifying current ∗ IFSM 70 APeak forward surge current Tj 125 ˚CJunction temperature Tstg −40∼+125 ˚CStorage temperature ∗ When mounting on PCB zzzzElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol Min. Typ. Max. Unit Conditions VF IR 0.40 V mA IF=1.0A VR =20V
zzzzElectrical characteristic curves (T a=25°C) 10m 100m FORWARD CURRENT : I F (A) FORWARD VOLTAGE : VF (V) C˚521=aT C˚57 C˚52 C˚52− Fig.1 Forward characteristics 02 0 3 0 4 0 5 0101µ 10µ 100µ 100m 10m REVERSE CURRENT : I R (A) REVERSE VOLTAGE : VR (V) Ta=125˚C 75˚C 25˚C −25˚C Fig.2 Reverse characteristics 0 1 01 52 02 53 03 5510p 100p TERMINAL CAPACITANCE : C T (F) REVERSE VOLTAGE : VR (V) Fig.3 Capacitance between terminals characteristics 0.1 0.2 0.3 0.4 0.5 FORWARD POWER DISSIPATION : P F (W) AVERAGE RECTIFIED FORWARD CURRENT : I O (A) D=0.05 D=0.1 D=0.2 D=0.3 D=0.5 D=0.8 DC Tp T D =Tp / T Tj=Tj Max. IF IO sine Fig.4 Forward power dissipation characteristics 00 2 4 6 8 1 01 21 41 61 82 0 0.10 0.20 0.30 0.40 0.50REVERSE POWER DISSIPATION : PR (W) REVERSE VOLTAGE : VR (V) D =0.8 sine DC D =0.05 D =0.1 D =0.2 D =0.3 D =0.5 VR VR Tp T Tj=Tj Max. Tj=Tj Max. D=Tp / T Fig.5 Reverse power dissipation characteristics 2.0 1.5 1.0 0.5 00 25 50 75 100 125 AVERAGE RECTIFIED FORWARD CURRENT : I O (A) AMBIENT TEMPERATURE : Ta (˚C) D=0.5 sine D=0.3 D=0.2 D=0.1 D=0.05 DC D=0.8 Tp T D =Tp / T VR =VRM / 2 IF IO Fig.6 Derating curve (when mounting on glass epoxy PCBs)