RB160M-30 JIANGSU
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes RB160M-30 SCHOTTKY BARRIER DIODE
FEATURES
Small Current Rectification Low Voltage MARKING: 73 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VR DC Blocking Voltage 30 V IO Forward Current 1 IFSM Non-repetitive Peak Forward Surge Current @t=8.3ms 15 A PD Power Dissipation 450 mW RθJA Thermal Resistance from Junction to Ambient 222 ℃/W Tj Junction Temperature 125 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit VR=15V 20 μA Reverse current IR VR=30V 50 μA VF(1) I F=500mA 0.46 Forward voltage VF(2)* I F=1000mA 0.48 V * Pulse test SOD-123 1 www.cj-elec.com The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. C,Mar,2015
0.1 100 1000 10000 0 25 50 75 100 125 100 150 200 250 300 350 400 450 500 0.01 0.1 100 1000 0 5 10 15 20 100 150 200 250 300 REVERSE VOLTAGE V R (V) REVERSE CURRENT I R (uA) T a =100 T a =25 Reverse Characteristics POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Power Derating Curve T a =100 T a =25 Forward Characteristics FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) CAPACITANCE BETWEEN TERMINALS C T (pF) REVERSE VOLTAGE V R (V) T a =25 f=1MHz Capacitance Characteristics Typical Characteristics www.cj-elec.com 2 C,Mar,2015
www.cj-elec.com 3 SOD-123 Suggested Pad Layout Min Max Min Max A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.450 0.650 0.018 0.026 c 0.080 0.150 0.003 0.006 D 1.500 1.700 0.059 0.067 E 2.600 2.800 0.102 0.110 E1 3.550 3.850 0.140 0.152 L L1 0.250 0.450 0.010 0.018 θ 0° 8° 0° 8° 0.500 REF 0.020 REF Symbol Dimensions In Millimeters Dimensions In Inches C,Mar,2015
www.cj-elec.com 4 C,Mar,2015 SOD-123 Tape and Reel