RB050L-40 ROHM

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For high-frequency rectification For switching power supplies zzzzFeatures 1) Compact power-mold type. (PMDS) 2) IO=3A guaranteed at this size. 3) Low IR. ( IR=16µA Typ. ) zzzzConstruction Silicon epitaxial planar zzzzExternal dimensions (Units : mm) ROHM : PMDS EIAJ : − JEDEC : SOD-106 EX. 1999 Dec. 0.1 CATHODE MARK 4.5±0.2 2.6±0.2 2.0±0.2 1.2±0.3 1.5±0.2 5.0±0.3 +0.02 −0.1 , ···Date of manufacture =9, C1 2 1 2 zzzzAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 40 V Mean rectifying current∗1 IO 3.0 A Peak surge current IFSM 70 A Junction temperature 125 °C Storage temperature −40~+125 °C ∗1 When mounted on an alumina board (82×30×1.0mm), 180° Half sine wave ∗2 60Hz, 1 Tj Tstg zzzzElectrical characteristics (Ta = 25°C) Parameter Symbol Max. Unit Conditions Forward voltage VF1 0.55 V IF=3.0A VF2 0.50 V IF=1.5A Reverse current IR 1.0 mA VR =40V Thermal resistance θj-a 90 When mounted on an alumina board. θj-a 120 When mounted on a glass epoxy board. 25 When mounted on an alumina board. °C/W °C/W °C/Wθj-l

zzzzElectrical characteristic curves (T a = 25°C) 100m FORWARD CURRENT : I F (A) FORWARD VOLTAGE : V F (V) 0.6 Ta=75 Ta=25 Fig. 1 Forward temperature characteristics Ta=125 0 5 1 01 52 02 53 03 54 0 100 1,000 10,000REVERSE CURRENT : I R (µA) REVERSE VOLTAGE : V R (V) Ta=125°C Ta=75°C Ta=25°C Fig. 2 Reverse temperature characteristics 350 5 10 15 20 25 30 1000 100 CAPACITANCE BETWEEN TERMINALS : C T (pF) REVERSE VOLTAGE : V R (V) Fig. 3 Capacitance between terminals characteristics DC D=0.8 00 25 50 75 100 125 1.0 2.0 3.0 4.0 5.0 D=0.5 D=0.3 D=0.2 D=0.1 D=0.05 sin wave T Tp IO IF D=Tp / T AVERAGE RECTIFIED FORWARD CURRENT : I O (A) LEAD TEMPERATURE : T L (°C) VR =VRM / 2 Fig. 4 Derating curve 000000 25 50 75 100 125 1.0 2.0 3.0 4.0 5.0 D=0.05 D=0.1 D=0.2 D=0.3 D=0.5 D=0.8 DC sine T Tp IF IO D=Tp / T VR =VRM / 2 AVERAGE RECTIFIED FORWARD CURRENT : I O (A) AMBIENT TEMPERATURE : Ta ( °C) Fig. 5 Derating curve (when mounted on a glass epoxy board) 000000 25 50 75 100 125 1.0 2.0 3.0 4.0 5.0 D=0.05 D=0.1 D=0.2 D=0.3 D=0.5 D=0.8 DC sine T Tp IF IO D=Tp / T VR =VRM / 2 AVERAGE RECTIFIED FORWARD CURRENT : I O (A) AMBIENT TEMPERATURE : Ta ( °C) Fig. 6 Derating curve (when mounted on an alumina board) D=0.05 0.5 1.0 1.5 2.0 2.5 D=0.1 D=0.2 D=0.3 D=0.5 D=0.8 DC sine T Tp IO Tj=TjMax. 5.0 D=Tp / T IF FORWARD POWER DISSIPATION : P F (W) AVERAGE RECTIFIED FORWARD CURRENT : I O (A) Fig. 7 Power dissipation characteristics D=0.05 D=0.1 D=0.2 D=0.3 D=0.5 D=0.8 DC sine 5 1 01 52 02 53 03 54 0 0.20 0.40 0.60 0.80 1.00 T Tp VR VR D=Tp / T REVERSE POWER DISSIPATION : P R (W) REVERSE VOLTAGE : V R (V) Tj=TjMax. Tj=TjMax. Fig. 8 Reverse power dissipation