PWB200A40 ROHM
Document overview
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Technical content
Symbol Item Conditions Ratings 200 Unit IT AV Average On-State Current IT RMS R.M.S. On-State Current Single phase, half wave, 180 conduction, Tc 121 Single phase, half wave, 180 conduction, Tc 121 ITSM Surge On-State Current I2t I2t PGM Peak Gate Power Dissipation PG AV Average Gate Power Dissipation IFGM Peak Gate Current VFGM Peak Gate Voltage Forward 1 2cycle, 50Hz/60Hz, peak value, non-reqetitive A 314 A 5400/6000 A 1499400 A2S W VRGM Peak Gate Voltage Reverse di/dt Critical Rate of Rise of On-State Current Tj Operating Junction Temperature Tstg Storage Temperature Mounting torque Mass Mounting M6 Terminal M6 IG 200mA Tj 25 VD 1 2VDRM dIG/dt 1A/ s Recommended Value 2.5 3.9 25 40 Recommended Value 2.5 3.9 25 40 W A 10 V 5 V
50 A/ s
4.7 48 4.7 48 280 N f B g Symbol Item Conditions Ratings Unit IDRM Repetitive Peak Off-State Current, max. IRRM Repetitive Peak Reverse Current, max. at VDRM, Single phase, half wave, Tj 150 at VDRM, Single phase, half wave, Tj 150 VTM Peak On-State Voltage, max. IGT Gate Trigger Current, max. VGD Non-Trigger Gate, Voltage. min. tgt Turn On Time, max. dv/dt Critical Rate of Rise of Off-State Voltage, min. IH Holding Current, typ. On-State Current 630A, Tj 25 Inst. measurement Tj 25 IT 1A VD 6V mA 60 mA 1.20 V 150 Tj 150 VD 1 2VDRM IT 200A IG 200mA Tj 25 VD 1 2VDRM dIG/dt 1A/ s 0.25 mA VGT Gate Trigger Voltage, max. Tj 25 IT 1A VD 6V 2 V V Tj 150 VD 2 3VDRM Exponential wave. Tj 25 Rth j-c Thermal Impedance, max. Junction to case 1 3Module 200 s V/ s 70 mA 0.12 /W
Electrical Characteristics
VRRM Repetitive Peak Reverse Voltage 300 V 360 V 300 PWB200AA40 400 480 400 V VRSM VDRM Non-Repetitive Peak Reverse Voltage Repetitive Peak Off-State Voltage PWB200AA is a Thyristor module suitable for low voltage, 3 phase recifier applications. IT AV 200A each device high Surge Current 6000 A 60Hz Easy Construction Non-isolated. Mounting base as common Anode terminal