PRF957 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscSiliconNPNRFTransistor PRF957
DESCRIPTION
- LowNoise NF=1.5dBTYP.,@VCE =6V,IC =30 mA,f=1GHz
- High Gain ︱S21e︱2 =12 dBTYP.@VCE =6V,IC =30 mA,f=1.0 GHz
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- DesignedforVHF,UHFlownoise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 20 V VCEO Collector-EmitterVoltage 10 V VEBO Emitter-BaseVoltage 1.5 V IC CollectorCurrent-Continuous 100 mA PC CollectorPowerDissipation @TC=25℃ 270 TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -65~150
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscSiliconNPNRFTransistor PRF957 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO CollectorCutoffCurrent VCB=10V;IE=0 0.1 μA IEBO EmitterCutoffCurrent VEB=1V;IC=0 0.1 μA hFE DCCurrentGain IC=5mA;VCE=6V 50 200 fT Current-Gain—BandwidthProduct IC=30mA;VCE=6V 8 GHz Cre Feed-BackCapacitance IE=0;VCB=6V;f=1.0MHz 0.65 pF ︱S21e︱2 InsertionPower Gain IC=30mA;VCE=6V;f=1.0GHz 12 dB NF NoiseFigure IC=5mA;VCE=6V;f=1.0GHz 1.5 dB