PPM8P30V8Q GWSEMI

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Technical content

The enhancement mode MOS is extremely high density cell and low on-resistance. MOSFET Product Summary V DS (V) R DS(on) (mΩ) I D (A) -30 20@ V GS =-10V 30@ V GS =-4.5V Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D =-250μA,V GS =0V -30 -33 - V Zero Gate Voltage Drain Current I DSS V DS =-30V,V GS =0V - - -1 μA Gate-Body Leakage Current I GSS V DS =0V,V GS =±20V - - ±100 nA On CHARACTERISTICS(Note 1) Gate Threshold Voltage V GS(th) V DS GS , I D =-250μA -1.8 V Static Drain-Source On-Resistance R DS(ON) V GS =-10V, I D =-8A - 20 25 mΩ V GS =-4.5V, I D =-6A - 30 40 mΩ Forward Tran conductance g FS V DS =-15V, I D =-9.1A S DYNAMIC PARAMETERS(Note 2) Input Capacitance C ISS V GS =0V, V DS =-15V, f=1.0MHz - 1600 - pF Output Capacitance C DSS - 350 - pF Reverse Transfer Capacitance C RSS - 300 - pF SWITCHING PARAMETERS(Note 2) Turn-On Delay Time t d(on) V DD =-15V, V GS =-10V, I D =-1A,R GEN =6Ω ns Turn-On Rise Time t r ns Turn-Off Delay Time t d(off) 110 ns Turn-Off Fall Time t r ns Total Gate Charge Q g V DS =-15V, V GS =-10V, I D =-9.1A - 30 - nC Gate-Source Charge Q gs - 5.5 - nC Gate-Drain Charge Q gd - 8 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 1) V SD V GS =0V,I S =-2.1A -1.2 V

Description

Electrical characteristics per line@25℃( unless otherwise specified) S（1、2、3） G（4） Marking information 4435 YYWW PPM8P30V8Q P-Channel MOSFET

Notes: 1.Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2 % 2.Guaranteed by design, not subject to production 3.Repetitive Rating: Pulse width limited by maximum junction temperature. 4.Surface Mounted on FR4 Board, t ≤ 10 sec F i g u r e 1 . S w i t c h i n g T e s t C i r c u i t F i g u r e 2 . S w i t c h i n g W a v e f o r m s Rating Symbol Value Units Drain-Source Voltage V DS - 3 0 V Gate-Source Voltage V GS ±20 V Continuous Drain Current (T J =150℃) T C =25℃ I D A T C =70℃ -6.5 T A =25℃ T A =70℃ Drain Current-Pulsed (Note 3) I DM -40 A Maximum Power Dissipation P D 3.1 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Resistance,Junction-to-Ambient (Note 4) R θJA 40 ℃/W Typical Characteristics Absolute maximum rating@25℃ V DD R L V OUT V IN V GS R GEN G D S V IN V OUT t on t r t d on t d off t off t f 10% 10% 90% 90% 90% 50% 50% 10% Pulse Width Inverted Thermal Characteristic PPM8P30V8Q P-Channel MOSFET

F i g 3 . P o w e r D i s s i p a t i o n F ig 4. Drain Current Fig 5. Output Characteristics F i g 6 . D r a i n - S o u r c e O n - R e s i s t a n c e F i g 7 . T r a n s f e r C h a r a c t e r i s t i c s Fig 8. Drain-Source On-Resistance 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 T J -Junction Temperature (℃) T J -Junction Temperature (℃) 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 I D -Drain Current (A) P D Power (W) I D -Drain Current (A) 0.040 0.000 0 1 0 2 0 3 0 4 0 5 0 I D -Drain Current (A) R DS(ON) On-Resistance ( Ω V GS -Gate-Source Volta g e V I D -Drain Current (A) T J -Junction Temperature (℃) Normalized On-Resistance V GS =4.5V 1.6 - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0.035 0.025 0.015 V GS =10V I D =8A 1.4 1.2 1.0 0.8 V GS =10 thru 6V V GS =10V -55℃ T C =125℃ 0.020 25℃ 0.6 0 1 2 3 4 5 0.030 0.010 0.005 V DS -Drain-Source Voltage (V) PPM8P30V8Q P-Channel MOSFET

Fig 9. R DS(ON) vs. V GS F i g 1 0 . C apacitance vs. V DS Fig 11. Gate Charge F i g 1 2 . S o u r c e - D r a i n D i o d e F orward F i g u r e 1 3 . S a f e O p e r a t i o n A r e a 0.00 0 2 4 6 8 1 0 V GS -Gate-Source Volta g e V R DS(ON) On-Resistance (m Ω V DS -Drain-Source Volta g e V C-Capacitance (pF) 2400 0 5 1 0 1 5 2 0 2 5 3 0 0.02 1800 1200 600 I D =8A 0.06 0.08 C ISS C OSS C RSS 0.04 0.10 0 1 0 2 0 3 0 4 0 Q g Gate Char g e nC V GS -Gate-Source Voltage (V) V SD Source-Drain Volta g e V I S -Reverse Drain Current (A) V DS =15V I D =8A T J =25℃ T J T A =25℃ Sin g le Pulse V DS -Drain-Source Volta g V I D -Drain Current (A) 0.01 11 00.1 0.1 P t =0.0001 100 R DS(ON) Limited BV DSS Limited 100 I D(ON) Limited I DM Limited P t =0.001 P t =0.01 P(t)=0.1 P(t)=1 dc P(t)=10 PPM8P30V8Q P-Channel MOSFET F i g u r e 1 4 . N o r m a l i z e d M a x i m u m T r a n s i e n t T h e r m a l I m p edance r(t),Normalized Effective Transient Thermal Impedance S q uare Wave Pluse Duration sec 0 . 0 0 0 1 0 . 0 0 1 0 . 0 1 0 . 1 1 1 0 1 0 0 6 0 0 0.1 0.01 Duty Cycle=0.5 0.2 Sin g le Pulse 0.02 0.05 0.1

A 5.800 6.200 0.228 0.244 B 3.800 4.000 0.150 0.157 C 0.330 0.510 0.013 0.020 D 4.700 5.100 0.185 0.200 E 1.350 1.750 0.053 0.069 F 1.270（BSC） 0.050（BSC） G 0.100 0.250 0.004 0.010 H 0.170 0.250 0.006 0.010 A B C D E F G H 1 2 3 4 567 8 PPM8P30V8Q P-Channel MOSFET Plastic surface mounted package; 8 leads SOP-8 PACKAGE OUTLINE