PN2222A

UMT2222A ROHM

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UMT2222A / SST2222A / MMST2222A / PN2222A Transistors NPN Medium Power Transistor (Switching) UMT2222A / SST2222A / MMST2222A / PN2222A !Features 1) BVCEO > 40V (IC=10mA) 2) Complements the UMT2907A / SST2907A / MMST2907A / PN2907A. !Package, marking, and packaging specifications Part No. UMT2222A UMT3 R1P T106 3000 SST2222A SST3 R1P T116 3000 MMST2222A SMT3 R1P T146 3000 PN2222A TO-92 T93 3000 Packaging type Marking Code Basic ordering unit (pieces) !Absolute maximum ratings (Ta = 25°C) Parameter Symbol VCBO VCEO VEBO IC Tj Tstg Limits 0.6 0.35 150 −55 ∼ +150 Unit V V V A W W W PC 0.2 0.625 SST2222A UMT2222A,SST2222A, MMST2222A PN2222A Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ When mounted on a 7 x 5 x 0.6 mm ceramic board !External dimensions (Units : mm) ROHM : UMT3 EIAJ : SC-70 (1) Emitter (2) Base (3) Collector ROHM : SST3 (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector ROHM : TO-92 EIAJ : SC-43 (1) Emitter (2) Base (3) Collector UMT2222A SST2222A MMST2222A PN2222A 0 ∼ 0.1 0.2Min. 2.4±0.2 1.3 0.95 0.45±0.1 0.15 0.4 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 −0.1 −0.1 +0.2 +0.1 −0.06+0.1 −0.05 (2)(1) (3) 0 ∼ 0.1 2.8±0.2 1.6 0.3 ∼ 0.6 1.1 0.8±0.1 0.15 0.4 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 −0.1 −0.1 +0.2 +0.1 −0.06+0.1 −0.05 (2)(1) (3) 0 ∼ 0.1 (2)(1) (3) 0.1 ∼ 0.4 2.1±0.1 1.25±0.1 0.9±0.1 0.2 0.7±0.1 0.15±0.050.3 2.0±0.2 1.3±0.1 0.65 0.65 +0.1 4.8±0.2(12.7Min.) 2.5Min. 4.8±0.2 3.7±0.2 5 0.45 2.3 0.5±0.1 −0.05+0.15 2.5+0.3 −0.1 (1) (2) (3) All terminals have same dimensions All terminals have same dimensions All terminals have same dimensions !Electrical characteristics (T a = 25°C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO BVCEO BVEBO ICBO IEBO 100 100 V V V nA nA I C =10µA IC =10mA IE =10µA VCB = 60V VEB = 3V −− 2VBE(sat) 0.6 − 1.2 V −− 1I C/IB =500mA/50mAVCE(sat) −− 0.3 V IC/IB =150mA/15mA IC/IB =500mA/50mA IC/IB =150mA/15mA 40 −− 50 −− 35 −− VCE =10V , IC =0.1mA VCE =10V , IC =1mA VCE =10V , IC =10mA VCE =1V , IC =150mA 100 − 300 V CE =10V , IC =150mA VCE =10V , IC =500mA fT Cob 300 MHz pF VCE =20V , IC =−20mA, f =100MHz VCB =10V , f =100kHz Cib −− 25 pF VEB =0.5V , f =100kHz td −− 10 ns VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mA VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mAtr −− 25 ns tstg −− 225 ns VCC =30V , IC =150mA , IB1 =−IB2 =15mA VCC =30V , IC =150mA , IB1 =−IB2 =15mA tf −− 60 ns Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Base-emitter saturation voltage Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Emitter input capacitance Delay time Rise time Storage time Fall time

UMT2222A / SST2222A / MMST2222A / PN2222A Transistors !Electrical characteristic curves 100 100 5 IB=0µA 100 200 400 500 600 300 Ta=25°C COLLECTOR CURRENT : Ic(mA) COLLECTOR-EMITTER VOLTAGE : VCE(V) Fig.1 Grounded emitter output characteristics 0.1 10 1.0 100 1000 100 1000

10 DC CURRENT GAIN : hFE

COLLECTOR CURRENT : Ic(mA) Ta=25°C VCE=10V Fig.3 DC current gain vs. collector current(Ι) 1.0 10 100 1000 0.2 0.3 0.1 COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V) COLLECTOR CURRENT : Ic(mA) Ta=25°C IC / IB=10 Fig.2 Collector-emitter saturation voltage vs. collector current 0.1 10 1.0 100 1000 100 1000 COLLECTOR CURRENT : Ic(mA) Ta=125°C VCE=10V 25°C −55°C Fig.4 DC current gain vs. collector current(ΙΙ) 0.1 10 1.0 100 1000 100 1000

10 AC CURRENT GAIN : hFE

COLLECTOR CURRENT : Ic(mA) Ta=25°C VCE=10V f=1kHz Fig.5 AC current gain vs. collector current 1.0 10 100 1000 0.8 1.2 1.8 1.6 0.4 BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) COLLECTOR CURRENT : Ic(mA) Ta=25°C IC / IB=10 Fig.6 Base-emitter saturation voltage vs. collector current

UMT2222A / SST2222A / MMST2222A / PN2222A Transistors 1 10 100 1000 0.8 1.2 1.8 1.6 0.4 BASE EMITTER VOLTAGE : VBE(ON)(V) COLLECTOR CURRENT : Ic(mA) Ta=25°C VCE=10V Fig.7 Grounded emitter propagation characteristics 1.0 10 100 1000 100 1000

10 TURN ON TIME : ton(ns)

COLLECTOR CURRENT : Ic(mA) Ta=25°C IC / IB=10 VCC=30V 10V Fig.8 Turn-on time vs. collector current 1.0 10 100 1000 100 500

10 RISE TIME : tr(ns)

COLLECTOR CURRENT : Ic(mA) Ta=25°C VCC=30V IC / IB=10 Fig.9 Rise time vs. collector current 1.0 10 100 1000 100 1000

10 STORAGE TIME : Ts(ns)

COLLECTOR CURRENT : Ic(mA) Ta=25°C VCC=30V IC=10IB1=10IB2 Fig.10 Storage time vs. collector current 1.0 10 100 1000 100 1000

10 FALL TIME : tf(ns)

COLLECTOR CURRENT : Ic(mA) Ta=25°C VCC=30V IC=10IB1=10IB2 Fig.11 Fall time vs. collector current 0.1 1.0 10 100 100 CAPACITANCE(pF) REVERSE BIAS VOLTAGE(V) Ta=25°C f=1MHz Cib Cob Fig.12 Input / output capacitance vs. voltage 1 10 100 1000 100 0.1COLLECTOR-EMITTER VOLTAGE : VCE(V) COLLECTOR CURRENT : Ic(mA) Ta=25°C 100MHz 200MHz 250MHz 300MHz 250MHz Fig.13 Gain bandwidth product 1.0 10 100 1000 100 1000 10CURRENT GAIN-BANDWIDTH PRODUCT(MHz) COLLECTOR CURRENT : Ic(mA) Ta=25°C VCE=10V Fig.14 Gain bandwidth product vs. collector current