PMD17K80 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K80
DESCRIPTION
- High DC current gain
- Collector-Emitter Sustaining Voltage- V CEO(SUS)= -80V(Min)
- Complement to type PMD16K80
APPLICATIONS
- Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -Continuous -20 A ICP Collector Current-Peak -40 A IB B Base Current -0.5 A PC Collector Power Dissipation@TC=25℃ 200 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c ThermalResistance, Junction to Case 0.875 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K80
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100Ma; IB= 0 B -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -40mA -2.8 V VBE(on) Base-Emitter On Voltage IC= -10A; VCE= -3V -2.8 V ICER Collector Cutoff current VCE= -80V; RBE= 1KΩ VCE= -80V; RBE= 1KΩ, TC=150℃ -1.0 -5.0 mA IEBO Emitter Cut-off current VEB= -5V; IC= 0 -2.0 mA hFE DC Current Gain IC= -10A; VCE= -3V 800 20000 fT Current-Gain—Bandwidth Product IC= -7A; VCE= -3V, f= 1kHz 4 MHz COB Output Capacitance IE= 0; VCB= -10V; ftest= 1.0MHz 400 pF isc Website：www.iscsemi.cn 2