PMD1701K ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1701K
DESCRIPTION
- High DC current gain
- Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min)
- Complement to type PMD1601K
APPLICATIONS
- Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -Continuous -20 A ICP Collector Current-Peak -40 A IB B Base Current -0.5 A PC Collector Power Dissipation@TC=25℃ 180 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c ThermalResistance, Junction to Case 0.97 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1701K
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA; IB= 0 -60 V V(BR)CER Collector-Emitter Breakdown Voltage IC= -100mA; RBE= 2.2kΩ -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -40mA -2.8 V VBE(on) Base-Emitter On Voltage IC= -10A; VCE= -3V -2.8 V ICER Collector Cutoff current VCE= -60V; RBE= 2.2KΩ -7.0 mA IEBO Emitter Cut-off current VEB= -5V; IC= 0 -3.0 mA hFE DC Current Gain IC= -10A; VCE= -3V 750 20000 fT Current-Gain—Bandwidth Product IC= -7A; VCE= -3V, f= 1kHz 4 MHz COB Output Capacitance IE= 0; VCB= -10V; ftest= 1.0MHz 400 pF isc Website：www.iscsemi.cn 2