PMD16K60 ISC
Document overview
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Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors PMD16K60/80/100
DESCRIPTION
- With TO-3 package
- High DC current gain
- DARLINGTON
APPLICATIONS
- Designed for use in power switching application. PINNING (See Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT PMD16K60 60 PMD16K80 80 VCBO Collector-base voltage PMD16K100 Open emitter 100 V PMD16K60 60 PMD16K80 80 VCEO Collector-emitter voltage PMD16K100 Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 20 A ICM Collector current(peak) 40 A IB Base current 0.5 A PD Power dissipation TC=25℃ 200 W Tj Max. operating Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 0.875 ℃/W Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors PMD16K60/80/100 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT PMD16K60 60 PMD16K80 80 V(BR)CEO Collector-emitter breakdown voltage PMD16K100 IC=0.1A ; IB=0 100 V VCEsat Collector-emitter saturation voltage I C=10A ;IB=40mA 2.0 V VBEsat Base-emitter saturation voltage I C=10A ;IB=40mA 2.8 V VBE Base-emitter on voltage I C=10A ; VCE=3V 2.8 V hFE DC current gain I C=10A ; VCE=3V 1000 20000 ICER Collector cut-off current VCE=Rated VCEO; RBE=Ω TC=150℃ 1.0 5.0 mA IEBO Emitter cut-off current V EB=5V; IC=0 2.0 mA fT Transition frequency I C=7A ; VCE=3V;f=1.0kHz 4.0 MHz COB Output capacitance I E=0 ; VCB=10V;f=1.0MHz 400 pF
Inchange Semiconductor Product Specification Silicon NPN Power Transistors PMD16K60/80/100 PACKAGE OUTLINE Fig.2 Outline dimensions