PMD12K80 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD12K80
DESCRIPTION
- High DC current gain
- Collector-Emitter Breakdown Voltage- V (BR)CEO= 80V(Min)
- Complement to type PMD13K80
APPLICATIONS
- Designed for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current -Continuous 8 A ICP Collector Current-Peak 16 A IB B Base Current 0.12 A PC Collector Power Dissipation@TC=50℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c ThermalResistance, Junction to Case 1.5 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD12K80
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 80 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; RBE= 2.2kΩ 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 16mA B 2.8 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 3V 2.8 V ICER Collector Cutoff current VCE= 54V; RBE= 2.2KΩ 5.0 mA IEBO Emitter Cut-off current VEB= 5V; IC= 0 3.0 mA hFE DC Current Gain IC= 4A; VCE= 3V 1000 20000 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 200 pF isc Website：www.iscsemi.cn 2