PMD11K60 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD11K60
DESCRIPTION
- High DC current gain
- Collector-Emitter Sustaining Voltage- VCEO(SUS)= -60V(Min)
- Complement to type PMD10K60
APPLICATIONS
- Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -Continuous -12 A ICP Collector Current-Peak -20 A IB B Base Current -0.2 A PC Collector Power Dissipation@TC=25℃ 150 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c ThermalResistance, Junction to Case 1.17 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD11K60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; IB= 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -24mA B -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -24mA B -2.8 V VBE(on) Base-Emitter On Voltage IC= -6A; VCE= -3V -2.8 V ICER Collector Cutoff current VCE= -60V; RBE= 1KΩ VCE= -60V; RBE= 1KΩ, TC=150℃ -1.0 -5.0 mA IEBO Emitter Cut-off current VEB= -5V; IC= 0 -2.0 mA hFE DC Current Gain IC= -6A; VCE= -3V 800 20000 fT Current-Gain—Bandwidth Product IC= -5A; VCE= -3V, f= 1kHz 4 MHz COB Output Capacitance IE= 0; VCB= -10V; ftest= 1.0MHz 300 pF isc Website：www.iscsemi.cn 2