PMD10K80 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K80
DESCRIPTION
- High DC current gain
- Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min)
- Complement to type PMD11K80
APPLICATIONS
- Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current -Continuous 12 A ICP Collector Current-Peak 20 A IB B Base Current 0.2 A PC Collector Power Dissipation@TC=25℃ 150 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c ThermalResistance, Junction to Case 1.17 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K80
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 24mA B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 24mA B 2.8 V VBE(on) Base-Emitter On Voltage IC= 6A; VCE= 3V 2.8 V ICER Collector Cutoff current VCE= 80V; RBE= 1KΩ VCE= 80V; RBE= 1KΩ, TC=150℃ 1.0 5.0 mA IEBO Emitter Cut-off current VEB= 5V; IC= 0 2.0 mA hFE DC Current Gain IC= 6A; VCE= 3V 1000 20000 fT Current-Gain—Bandwidth Product IC= 5A; VCE= 3V, f= 1kHz 4 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 300 pF isc Website：www.iscsemi.cn 2