PM50502C HITACHI
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BLE D MM 4496205 0013686 1T2 MMHITY PM50502C HITACHI/( OPTOELECTRONICS) SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING MI FEATURES ican i eB @ Equipped with Power MOS FET i Pky Gog len al © Low On Resistance Pape] pee] Pees: someone [al a Lela FasTON @ Low Drive Current i) 8) #110 © Wide Area of Safe Operation Peas E @ Inherent Parallel Diod between Source and Drain = @ Suitable for Motor Driver, Switching Regulator and a ee, etc. a {Dimensions im mm) id ‘Symbol | Electrode | Terminale Remarks D1 | Dramt | MS Serew | Power termnals se st S2 | Source ? | MS Screw | Power termnals D1 D2 | Drain? | MS Screw | Power termnals et ‘ > Gi | Gaet | #10 | Sal vrmnais S1 | Sewree1 | #110 | Sunalvermunals st si Ge | Cue? | #110 | Sumaitermmals S2 | Sowce? | #0 | Suneitermanis @ ABSOLUTE MAXIMUM RATINGS (Ta— 25°C) (Per FET chip) POWER VS. Tem [Syms —[—Raing [Uni NATURE DERATING Drain-Source Voltage [Voss | 50 | V Gate-Source Voltage y Drain Current ce ee ee ee 5 Drain Peak Current A 2 Body-Drain Diode Body-Drain Diode Re Hi Channe! Dissipation [ Par | 30 TW 3 Channel Temperature °c ° Storage Temperature “c Insulation Dielectric Vv ° 30 700 150 Value at Te=25%C_*+Base to Terminale AC minute Case Tempertere Te (0)
BLE D MM 4496205 0013687 039 MBHITY HITACHI/( OPTOELECTRONICS ) @ELECTRICAL CHARACTERISTICS (Ta=25°C) (Per FET chip) Item | Symboi_ [Test Condition [mins [ typ. | max. | Unit Drain-Source Breakdown Voltage [| Vesnoss [ fom10mA VeswO | soo | = | |v Gate-Source Lesk Curren [Tess | Ves #16V, Vosm0 Sid «YS | we Gate-Source Breakdown Voltage [ Viences [tem #100A, Veewo [ eao | = [= TV Gate-Source Threshold Voltage | Veswm [dom tma, Vesmtov | as | = [ao] Vv Drain-Source Saturation Voltage | Vosin | Yon 25A, Vesmtove | nas [0 |v Static Drain-Source On State =19Ve see ee ee ec Forward Transfer Admittance 1p= 2A, Vos—10V* [ | «a{- | s Input Capacitance | = [ioas0[ = | oF Output Capacitance Vos~10V, Ves 0, f- 1 MHz | — | 360] - | oF Reverse Transfer Capacitance | = | 400] =| oF Turn-on Delay Time | | = | iso[ = [ns Rise Time [te | fom 25A, Ves 10V, Rim 1.20 [= | 700[ — | ns Turn-off Delay Time [ = | soo} - | ns Fall Time | = | eof = | os Body-Drain Diode Forward . _ Body Drain Diode Reverse [| Tp=25A, Ves= 0, dir/dt=100A/us | | | = | ns fecovery Time + Pole Tew @ MECHANICAL CHARACTERISTICS em [_Symbot [Condition Rating Tait Fixing Strength |_ =| Mounted into mein-terminal with M5 serew | 1520 | hg- om fing Stronety [= [Mente int heat sith with MS gery 00 Weight a SWITCHING TIME TEST CIRCUIT WAVEFORMS Vie Montor Vox Monitor 0% DUT Vou R Vout 10% = Veo \\ / > +30v ‘om ot Sf ee 912
BLE D MM 449205 0013688 T75 MMHITH HITACHI/( OPTOELECTRONICS ) MAXIMUM SAFE OPERATION AREA TYPICAL OUTPUT CHARACTERISTICS ioe 5 2588) SS aT eerie (aw Sr See NG ean “TTP TIMI, Se TINS NSH A = of LIT ie Tl 8 Gasecenae 2 ‘BEA see 2 f ttt tr = FR LPS = [PTT TIT TTT] 3] GAG). Ae rs } EE t oft tT TTT TT | Fe AN 7 PRR ESE eto i SHatit a a | Seer as i freer} et LOM TTT me till A A a a a a a) Onin Souce Vtate Yor 'V) Drom te Souce Volase Yor ‘V1 DRAIN- SOURCE SATURATION VOL TAGE TYPICAL TRANSFER CHARACTERISTICS VS. GATE-SOURCE VOLTAGE . ra " EEREYBee) | FREE FE ; Pe ae NS
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3 “HHS Sot AT PLT Te i ok i EE aS boot} 1 tap } EEE a bese Eo ei tet teat tt tt Se LI TTT 3 Lher it ty Tt ELLUM TUT | fof TTT | ER pH * ve HE tt TT TT TT tT | a ar a ae aS Sa a oY 913
BLE D M@®@ 4496205 0013689 501 ures) TR pmsoso2c HITACHI/( OPTOELEC RAIN DIODE REVERSE FORWARD TRANSFER ADMITTANCE BODY Recovenv TIME VS. DRAIN CURRENT ‘wo —— Had Oc FE ee :* nf : AMICI > LT Te ape HH a ———— eos a : HR SSS ey (in iii eee nee Pasi F omr 4 IH PHIM TTT TT 2 AMocooml : ie ==: 5 = Ss | CAME ° " teverse: in Current lon . ° Dram Current fy A Re Dra Raine’ SOURCE VOLTAGE DYNAMIC INPUT CHARACTERISTICS VS. DRAIN- SOURCE . RO CCCP, Sa aaGee OECCERNZ TO. SSS EEA: re p — $ | SSS POA —= === 2 y } : k= i NY Ha : ~ FESEEEEEES Aer pot 3 \\ a 100V ieee AGE] SS o 100 200 300 “ ° : : : Gate Charge Qe ne ISE DRAIN CURRENT VS. ERISTICS *source TO DRAIN VOLTAGE SWITCHING CHARACTI e “SSS AAA [iis eos PERSE TT ETT ee i Saas eee fe ae peeistie aera Shp Poo he = —_-- aH tow EH Cooper Tre Ae sTry : 1 | : fA epee | Geyer Il Suey ences ‘SSS LE ATTi tt} ——- ° ° “ Source te Drain Voltage Veo V 914
b1E D MMH 4496205 0013690 623 MBHITY TP M5 05026 HITACHI/( OPTOELECTRONICS) NORMALIZED TRANSIENT THERMAL IMPEDANCE VS. PULSE WIDTH 5 Fa ce ee Se ertinesi eee ate a acest eat eee acti: | ee Ll ese ei oT Fl ee TTT I a a0) ee ; SSS SS Saar ee ee | “emoanee Tener / See at ool EST oP i Cera te b at eit LUTTE PTET TTT EB 1 om io 10m 100m 7 70 . Pulse Width PW (S) 915