PH0814-40 MACOM
Document overview
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Technical content
Features
l NPN Silicon Microwave Power Transistor l Common Emitter Configuration l Broadband Class AB Operation l Interdigitated Geometry l Diffused Emitter Ballasting Resistors l Gold Metalization System l Internal Input and Output Impedance Matching l Hermetic Metal/Ceramic Package Absolute‘tiaximum Ratinas at 25°C I Parameter / Symbol ( Rating 1 Units 1
1 Collector-BaseVoltage ( V,,, 1 56 I v I
Collector Current (Peak) V Es 56 V V EBO 3.0 v ‘c 5.6 A Total Power Dissipation junction Temperature Storage Temperature P TO: 175 W TJ 200 “C T ST0 -55 to +200 “C Thermal Resistance 8 JC 1.0 Electrical Characteristics at 25°C “Cl-W it .060’.002 f (1521.05) UNLESS CT-IERVISE NOTED. TCLERANCES ARE :NCH~:S ZOO5 :M!, LIHETERS T,13MM, - I Parameter ( Symbol 1 Min 1 Max 1 Units 1 Test Conditions Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Collector-Base Breakdown Voltage BV,,, 56 - V I,=50 mA ICES 5.0 mA v,,=2a v BV,,, 56 - V I,=50 mA Emitter-Base Breakdown Voltage BvEBO 3.0 - V I,=1 0 mA DC Forward Current Gain h FE 15 100 - V,,=5.0 V, 1,=0.5 A Input Power P ,N 5.5 8.8 w V,,=28 V, I,,=12 mA, PO,,=42 W, F=1450 MHz CollectorCurrent ‘c - 3.75 A V,,=28 V, I& 2 mA, PO,?42 W, F=l450 MHz Input Return Loss RL Saturated Output Power P ST Load Mismatch Tolerance VSWR-T - Load Mismatch Tolerance VSWR-T - Typical Optimum Device Impedances F(MHz) z,(n) 850 2.0 - j3.6 950 2.4 - j2.5 1050 3.1 - il.8 1150 3.5 - il.9 1250 3.3 - j2.4 1350 2.5 - j2.4 1.4 - j0.5 Specifications Subject to Change Without Notice. 9-102 North America: Tel. (800) 366-2266 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax (800) 618-8883 Fax +81 (03) 3226-1451 M/A-COM, Inc. = Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020