PH0810-35 ETC1
Document overview
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Technical content
Features
Designed for Linear Amplifier Applications Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP Class A: +53dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting .100*.010 (2.54t.25) I t .230 c5.?4) Absolute‘ Maximum Ratings at 25°C
Electrical Characteristics
at 25°C INCHES f.005 UNLESS OTHERWISE NOTED, TOLERANCES ARE ,.HILuNETERS tlsnn, Typical Optimum Device Impedances - 2 LOA F(MHz) q#4 ZOAim 600 1 .O + j3.7 2.1 + j0.9 650 1.3 + j4.0 1.6 + j0.7 900 1.9 + j4.3 1.6+jO.4 i.i”Tw 960 3.0 + j2.7 1.7 + jO.1 ZIN Specifications Subject to Change Without Notice.
Wireless Bipolar Power Transistor, 35W PH0810-35 v2.00 Typical Broadband Performance Curves GAIN-EFFICIENCY vs FREQUENCY Po,,=35 W Vcc=24 V I,,=200 mA l5 6 10 1 * - ' 25 850 900 960 FREQUENCY (MHz) GAIN vs POWER OUTPUT F=900 MHz V,,=24 V P,, Wm) IMD vs PoUT Vcc=24 V I,,=200 mA F1=900 MHz F2=900.1 MHz Claaa A6 P&PEP) in dBm ii z OUTPUT POWER vs COLLECTOR VOLTAGE 1,,=200 mA F=900 MHz P,,r0.75 w COLLECTOR VOLTAGE (V) C,, vs COLLECTOR VOLTAGE F=l.OMHz 60 , I v,, W) IMD vs P,, -15 r Vcc=20 V lcoz2.5 A F1=900 MHz F2z900.1 MHz Clam A B P&PEP) in dBm
Wireless Bipolar Power Transistor, 35W PH0810-35 v2.00 RF Test Fixture P CR1 Cl iii. 740 1,241 247 (*) 431 ARTWORK DIMENSIONS IN MILS PAR-l-S LIST Cl c2 CR1 Ll L2 Ql Rl RLl BOARD TYPE 100 pF ATC SIZE B 5000 pF
50 UF 50 VOLTS
lOT/Nll, 20 AWG ON l/8’ DIAMETER PH0810-35
5 OHMS l/4 WATT
lOT/ND, 22 AWG ON 3.1 OHM l/4 WATT ROGERS 6010,5 ,025' THICK, ER = 1085 Specifications Subject to Change Wiiout Notice.