PF08103A HITACHI

Document overview

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Technical content

Features

  • 1 in / 2 out dual band amplifier
  • Simple external circuit including output matching circuit
  • Simple band switching and power control
  • High gain 3stage amplifier : +4.5 dBm input
  • Lead less thin & Small package : 11 · 13.75 · 1.8 mm
  • High efficiency : 48% Typ at 34.5 dBm for E-GSM 36% Typ at 31.5 dBm for DCS1800

Internal Circuit Block Diagram Vdd1 VCTL VCTL Vapc Pin Vdd2 Pout DCS Pout GSM Bias circuit Band Select and Power Control (H: 2 V Min, L: 0.3 V Max) Operating Mode V CTL VCTL Vapc GSM Tx ON H L Control DCS Tx ON L H Control Tx OFF L L < 0.2 V Current of Control Pin Control Pin Equivalent Input Circuit Control Current V CTL 160 mA Max at 3 V VCTL 80 mA Max at 3 V Vapc 3 mA Max at 3 V

Internal Diagram and External Circuit Pin Pout DCS Pout GSM Bias circuit 721 VCTL VCTL Vapc Vdd2Vdd1 VCTL VCTL Vapc Vdd2Vdd1 Pin Note: C1 = C2 = 4.7 µF TANTALUM ELECTROLYTE C3 = C4 = 0.01 µF CERAMIC CHIP C5 = C6 = C7 = 1000 pF CERAMIC CHIP FB = FERRITE BEAD BLO1RN1-A62-001 (MURATA) or equivalent Z1 = Z2 = Z3 = 50 Ω MICRO STRIP LINE Pout DCS FB Z1 Z2 Pout GSM FB FB C6 C7 C4

Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Supply voltage V DD 8.5 V Supply current I DD GSM 3A IDD DCS 3A VCTL , VCTL voltage V CTL , VCTL 4V Vapc voltage Vapc 4 V Input power Pin 10 dBm Operating case temperature Tc (op) –30 to +100 °C Storage temperature Tstg –30 to +100 °C Output power Pout GSM 5W Pout DCS 3W Note: The maximum ratings shall be valid over both the E-GSM-band (880-915 MHz), and the DCS-band (1710-1785 MHz). Electrical Characteristics for DC (Tc = 25°C) Item Symbol Min Typ Max Unit Test Condition Drain cutoff current Ids — — 20 mA Vdd = 6.0 V, Vapc = 0 V, VCTL = 0 V, VCTL = 0 V — — 300 mA Vdd = 8.5 V, Vapc = 0 V, VC TL = 0 V, VC TL = 0 V, Tc = –20 to +80°C VCTL control current ICTL — 100 160 mAV CTL = 3.0 V VCTL control current ICTL —5 08 0 mAV CTL = 3.0 V

Test conditions unless otherwise noted: f = 880 to 915MHz, Vdd1 = Vdd2 = 4.8V, Pin = +4.5dBm, VCTL = 2.0V, VCTL = 0.3V, Rg = Rl = 50W , Tc = 25°C, Pulse operation with pulse width 577 ms and duty cycle 1:8 shall be used. Item Symbol Min Typ Max Unit Test Condition Frequency range f 880 — 915 MHz Control voltage range Vapc 0.2 — 3.0 V Vapc control current Iapc — — 3 mA Vapc = 3.0V Total efficiency h T 43 48 — % Pout GSM = 34.5dBm, 2nd harmonic distortion 2nd H.D. — –45 –35 dBc Vapc = control 3rd harmonic distortion 3rd H.D. — –45 –35 dBc 4th~8th harmonic distortion 4th~8th H.D. — — –35 dBc Input VSWR VSWR (in) — 2 3 — Output power (1) Pout (1) 35.0 35.7 — dBm Vapc = 3.0V Output power (2) Pout (2) 33.0 34.0 — dBm Vdd = 4.2V, Vapc = 3.0V, Tc = +85°C, Pin = +3dBm Isolation — — –40 –20 dBm Vapc = 0.2 V Isolation at DCS RF-output when GSM is active — — –30 –20 dBm Pout GS M = 34.5dBm (GSM mode) Measured at f = 1760 to 1830MHz Switching time tr, tf — 1 2 m s Pout GSM = –15 to 35.0dBm Stability — No parasitic oscillation All spuriouses < –36 dBm —V DD = 4.2 to 6.3V, Pout £ 35.0dBm, Vapc £ 3.0V GSM pulse. Rg = 50W , Tc = –20 to +85°C, Output VSWR = 6 : 1 All phases, RES BW = 3MHz Load VSWR tolerance — No degradation or Permanent degradation DD = 4.2 to 6.3V, Pout GS M £ 35.0dBm, Vapc £ 3.0V GSM pulse. Rg = 50W , t = 30sec., Tc = –20 to +85°C, Output VSWR = 10 : 1 All phases Noise power Pnoise1 — — –73 dBm f0 = 915MHz, frx = f0 +10MHz Pout GSM = 35dBm, RES BW = 100kHz Pnoise2 — — –85 dBm f0 = 915MHz, frx = f0 +20MHz Pout GSM = 35dBm, RES BW = 100kHz Pnoise3 — — –77 dBm frx = 1805 to 1880MHz Pout GSM = 35dBm, RES BW = 100kHz Slope Pout/Vapc — — — 200 dB/V Pout GSM = 0 to 35dBm

Test conditions unless otherwise noted: f = 1710 to 1785MHz, Vdd1 = Vdd2 = 4.8V, Pin = +4.5dBm, VCTL = 0.3V, VCTL = 2.0V, Rg = Rl = 50W , Tc = 25°C, Pulse operation with pulse width 577 ms and duty cycle 1:8 shall be used. Item Symbol Min Typ Max Unit Test Condition Frequency range f 1710 — 1785 MHz Control voltage range Vapc 0.2 — 3.0 V Vapc control current Iapc — — 3 mA Vapc = 3.0V Total efficiency h T 33 36 — % Pout DCS = 31.5dBm, 2nd harmonic distortion 2nd H.D. — –45 –35 dBc Vapc = control 3rd harmonic distortion 3rd H.D. — –45 –35 dBc 4th~8th harmonic distortion 4th~8th H.D. — — –35 dBc Input VSWR VSWR (in) — 3 5 — Output power (1) Pout (1) 32.5 33.0 — dBm Vapc = 3.0V Output power (2) Pout (2) 31 31.5 — dBm Vdd = 4.8V, Vapc = 3.0V, Tc = +85°C, Pin = +3dBm Isolation — — –35 –30 dBm Vapc = 0.2V Switching time tr, tf — 1 2 m s Pout DCS = –15 to 32.0dBm Stability — No parasitic oscillation — V DD = 4.2 to 6.3V, Pout D CS £ 32.5dBm, Vapc £ 3.0V DCS pulse. Rg = 50W , Tc = –20 to +85°C, Output VSWR = 6 : 1 All phases Load VSWR tolerance — No degradation — V DD = 4.2 to 6.3V, Pout D CS £ 32.5dBm, Vapc £ 3.0V DCS pulse. Rg = 50W , t = 30sec., Tc = –20 to +85°C, Output VSWR = 10 : 1 All phases Noise power Pnoise1 — — –77 dBm f0 = 1785MHz, frx = f0 +20MHz, Pout DCS = 31.5dBm, RES BW = 30kHz Pnoise2 — — –74 dBm frx = 925 to 935MHz, Pout DCS = 31.5dBm, RES BW = 30kHz Pnoise3 — — –85 dBm frx = 935 to 960MHz, Pout DCS = 31.5dBm, RES BW = 30kHz Slope Pout/Vapc — — — 200 dB/V Pout DCS = 0 to 32.0dBm Intermodulation — — — –20 dBm Pout = 31.5dBm, Interferer.CW f0 +800kHz, Pinterfer = –9dBm, RES BW = 300kHz, Measure at f0 –800kHz

(Bottom side) (Upper side) 1.8 ± 0.2 11.0 ± 0.3 Hitachi Code JEDEC EIAJ Weight (reference value) RF-O Unit: mm 13.75 ± 0.3 (1.60) (1.40) (1.40) 11.0 ± 0.3 (1.40) (1.40) (2.40) (1.60) (3.30) (3.30) (5.40) 13.75 ± 0.3 (5.40) (3.40) (3.70) (2.50) (2.50) (3.70) (1.40) (3.40) 11.0 ± 0.3 (10.8)(2.40) 1 2 G 3 4 8 7 G 6 5 G G Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.1mm. Pin arrangement 1 : V CTL 2 : VCTL 3 : Vdd2 4 : Pout GSM 5 : Pout DCS 6 : Vdd1 7 : Vapc 8 : Pin G : GND

  1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 Copyright © Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. Hitachi Asia Pte. Ltd.

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