PF0210 HITACHI

Document overview

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Technical content

Features

  • High efficiency: 34% Typ for CW 30% Typ for p/4-DQPSK
  • Low input power: 0 dBm ave. Typ for p /4-DQPSK
  • Simple bias circuit
  • High speed switching: 8 ms Typ Pin Arrangement 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND
  • RF-B2

Internal Diagram and External Circuit G GND G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout PoutVDDVAPCPin Z1 C1 C3 C2 Z2FB1 FB2 C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line) Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Supply voltage V DD 17 V Supply current I DD 4A VAPC voltage V APC 5.5 V Input power Pin 20 mW Operating case temperature Tc (op) –30 to +100 °C Storage temperature Tstg –40 to +110 °C

Electrical Characteristics (Tc = 25°C) Analog Transmission Item Symbol Min Typ Max Unit Test Condition Frequency f 824 — 849 MHz — Drain cutoff current I DS — — 500 mAV DD = 17 V, VAPC = 0 V Total efficiency(1) hT(1) 30 34 — % Pin = 3 dBm, VDD = 12.5 V, 2nd harmonic distortion 2nd H.D. — –55 –30 dBc Pout = 6 W (V APC controlled), 3rd harmonic distortion 3rd H.D. — –60 –40 dBc Input VSWR VSWR (in) — 2 3 — Output power Pout 6 9 — W Pin = 3 dBm, VDD = 12.5 V, VAPC = 4 V Isolation — — –45 –40 dBm Pin = 3dBm, VDD = 12.5 V, VAPC = 0.5 V Stability — No parasitic oscillation — Pin = 3 dBm, VDD = 12.5 V, Pout £ 6 W, Output VSWR = 20:1 All phases Digital Transmission Item Symbol Min Typ Max Unit Test Condition Frequency f 824 — 849 MHz — Total efficiency(2) hT(2) 25 30 — % Pin controlled ( p/4-DQPSK, Öa = Adjacent channel P ADJ (30k) — –30 –28 dBc 0.35, 48.6 kbps), leakage power P ADJ (60k) — –50 –46 dBc BW =24.3 kHz with Root Nyquist Input power Pin — — 5 dBm ave. Filter, Pout = 5.5 W ave., VDD = 12.5 V VAPC = 3.9 V Mechanical Characteristics Item Conditions Spec Torque for screw up the heatsink flange M3 Screw Bolts 4 to 6 kg•cm Warp size of the heatsink flange: S S S = 0 +0.3/– 0 mm

η T 824 829 839 849 VAPC 834 844 Pin = 2 mW VDD = 12.5 V Pout = 6 W Efficiency ηT (%) Apc Voltage VAPC (V) V.S.W.R. (in) Frequency f (MHz) VAPC , ηT, VSWR (in) vs. Frequency VSWRin η T 824 829 839 849 VSWRin 834 844 Pin = 2 mW VDD = 12.5 V VAPC = 3.9 V Efficiency ηT (%) Output Power Pout (W) V.S.W.R. (in) Frequency f (MHz) Pout, ηT, VSWR (in) vs. Frequency Pout

Frequency f (MHz) 834 844 Pin = 2 mW VDD = 12.5 V Pout = 6 W 3rd H.D (dB) 2nd H.D (dB) 2nd H.D 3rd H.D −20 −30 −40 −50 −60 −70 −20 −30 −40 −50 −60 −70 2nd H.D, 3rd H.D vs. Frequency (1) 824 829 839 849 Frequency f (MHz) 834 844 Pin = 2 mW VDD = 12.5 V VAPC = 3.9 V 3rd H.D (dB) 2nd H.D (dB) 2nd H.D 3rd H.D −20 −30 −40 −50 −60 −70 −20 −30 −40 −50 −60 −70 2nd H.D, 3rd H.D vs. Frequency (2)

Efficiency ηT (%) 824 829 839 849 Frequency f (MHz) 834 844 Pin = 2 mW VDD = 12.5 V VAPC = 3.9 V Pout η T Output Power Pout (W) Pout, ηT vs. Frequency (1) Efficiency ηT (%) 824 838 866 894 Frequency f (MHz) 852 880 Pin = 2 mW VDD = 12.5 V VAPC = 3.9 V Pout η T Output Power Pout (W) Pout, ηT vs. Frequency (2) Tx Rx

η T 10.5 11.5 14.5 16.5 VAPC VSWRin 12.5 15.5 f = 824 MHz Pin = 2 mW Pout = 6 W Efficiency ηT (%) Apc Voltage VAPC (V) V.S.W.R. (in) Supply Voltage VDD (V) VAPC , ηT, VSWR (in) vs. VDD (1) 13.5 η T 10.5 11.5 14.5 16.5 VAPC VSWRin 12.5 15.5 f = 849 MHz Pin = 2 mW Pout = 6 W Efficiency ηT (%) Apc Voltage VAPC (V) V.S.W.R. (in) Supply Voltage VDD (V) VAPC , ηT, VSWR (in) vs. VDD (2) 13.5

10.5 11.5 14.5 16.5 Supply Voltage VDD (V) 12.5 15.5 f = 824 MHz Pin = 2 mW Pout = 6 W 3rd H.D (dB) 2nd H.D (dB) 2nd H.D 3rd H.D −20 −30 −40 −50 −60 −70 −20 −30 −40 −50 −60 −70 2nd H.D, 3rd H.D vs. VDD (1) 13.5 10.5 11.5 14.5 16.5 Supply Voltage VDD (V) 12.5 15.5 f = 849 MHz Pin = 2 mW Pout = 6 W 3rd H.D (dB) 2nd H.D (dB) 2nd H.D 3rd H.D −20 −30 −40 −50 −60 −70 −20 −30 −40 −50 −60 −70 2nd H.D, 3rd H.D vs. VDD (2) 13.5

η T 2 2.5 4 5 Pout 3 4.5 f = 824 MHz Pin = 2 mW V DD = 12.5 V 3.5 Output Power Pout (W) Apc Voltage VAPC (V) Efficiency ηT (%) Pout, ηT vs. VAPC (1) η T 2 2.5 4 5 Pout 3 4.5 f = 849 MHz Pin = 2 mW V DD = 12.5 V 3.5 Output Power Pout (W) Apc Voltage VAPC (V) Efficiency ηT (%) Pout, ηT vs. VAPC (2)

η T 0 0.2 0.6 1.0 Pout VSWRin 0.4 0.8 f = 824 MHz VDD = 12.5 V VAPC = 3.9 V Efficiency ηT (%) Output Power Pout (W) V.S.W.R. (in) Input Power Pin (mW) Pout, ηT, VSWR (in) vs. Pin (1) η T 0 0.2 0.6 1.0 Pout 0.4 0.8 f = 849 MHz VDD = 12.5 V VAPC = 3.9 V Efficiency ηT (%) Output Power Pout (W) V.S.W.R. (in) Input Power Pin (mW) Pout, ηT, VSWR (in) vs. Pin (2) VSWRin

60.5 – 0.5 57.5 – 0.5 0.5 12.7 – 0.5 11.0 – 0.3 5.0+ 0.6 – 0.3 2.3 49.8 – 0.5 13.0 – 1 0.25 22.0 – 1 8.0 – 1 9.2 – 1 3.3 5 – 1 6.35 – 0.5 R1.6 213 4 Hitachi Code JEDEC EIAJ Weight (reference value) RF-B2 16 g Unit: mm

  1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 Copyright © Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. Hitachi Asia Pte. Ltd.

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