PF0121 HITACHI

Document overview

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Technical content

Features

  • Low power control current: 0.9 mA Typ
  • High speed switching: 1.5 msec Typ
  • Wide power control range: 100 dB Typ Pin Arrangement 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND
  • RF-B2

Internal Diagram and External Circuit G GND G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout PoutVDDVAPCPin Z1 C2 C1 Z2FB1 FB2 C1 = 0.01 µF (Ceramic chip capacitor) C2 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip line) Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Supply voltage V DD 17 V Supply current I DD 6A APC voltage V APC 8V Input power Pin 20 mW Operating case temperature Tc (op) –30 to +110 °C Storage temperature Tstg –40 to +110 °C

Electrical Characteristics (Tc = 25°C) Item Symbol Min Typ Max Unit Test Condition Drain cutoff current I DS — — 500 mAV DD = 17 V, VAPC = 0 V Total efficiency hT 30 35 — % Pin = 2 mW, VDD = 12.5 V, 2nd harmonic distortion 2nd H.D. — –50 –40 dBc Pout = 13 W (at APC controlled), 3rd harmonic distortion 3rd H.D. — –55 –45 dBc R L = Rg = 50 W , Tc = 25°C Input VSWR VSWR (in) — 2 3 — Output power (1) Pout (1) 17 23 — W Pin = 2 mW, VDD = 12.5 V, VAPC = 7 V, R L =Rg = 50 W , Tc = 25°C Output power (2) Pout (2) 9 12 — W Pin = 2 mW, VDD = 10.3V, VAPC = 7 V, R L = Rg = 50 W , Tc = 80°C Isolation — — –60 –40 dBm Pin = 2 mW, VDD = 12.5 V, VAPC = 0.5 V, R L = Rg = 50 W , Tc = 25°C Switching time t r, tf — 1.5 2 ms Pin = 2 mW, VDD = 12.5 V, Pout = 13 W, R L = Rg = 50 W , Tc = 25°C Stability — No parasitic oscillation — Pin = 2 mW, VDD = 12.5 V, Pout £ 13 W (at APC controlled), Rg = 50 W , Tc = 25°C, Output VSWR = 20:1 All phases Test System Diagram S.G L.P.F 3dB ATT Power Meter Test Fixture RF SW. Power Meter Phase Shifter Directional Coupler VAPC VDD Directional Coupler Spectrum Analyzer Short

Switching Time Test Diagram S.G P.G Oscillo Scope Vout f=10 kHz VAPC Pin Pout D.U.T VDD =12.5 V Z=50Ω 1SS1061SS106 2.2 kΩ100p Power Meter Vout 95% 50% 50% tr tf Duty=1/8 VAPC

Unit: mm 100 3.54 16.5 2.88 2.88 26.5 3.5 2.88 1634.5 2.88 28 46 4 VAPC VDD 1.5 Grass Epoxy Double sided PCB C1=0.01µF (Ceramic Chip Capacitor) C2=330 µF (Aluminum Electrolyte Capacitor) L1=L2 : BLO2RN1-R62 (Manufacturer : MURATA) or equivalent (Ferrite Bead Inductor) The coefficient of RF line loss in the P.C.B is showed bellow. Mechanical Characteristics Item Conditions Spec Torque for screw up the heatsink flange M3 Screw Bolts 4 to 6 kg•cm Warp size of the heatsink flange: S S S = 0 +0.3/–0 mm

  • Unevenness and distortion at the surface of the heatsink attached module should be less than 0.05 mm.
  • It should not be existed any dust between module and heatsink.
  • MODULE should be separated from PCB less than 1.5 mm. Soldering temperature and soldering time should be less than 230°C, 10 sec. (Soldering position spaced from the root point of the lead frame: 2 mm)
  • Recommendation of thermal joint compounds is TYPE G746. (Manufacturer: Shin-Etsu Chemical, Co., Ltd.)
  • To protect devices from electro-static damage, soldering iron, measuring-equipment and human body etc. should be grounded.
  • Torque for screw up the heatsink flange should be 4 to 6 kg · cm with M3 screw bolts.
  • Don't solder the flange directly.
  • It should make the lead frame as straight as possible.
  • The module should be screwed up before lead soldering.
  • It should not be given mechanical and thermal stress to lead and flange of the module.
  • When the external parts (Isolator, Duplexer, etc.) of the module are changed, the electrical characteristics should be evaluated enough.
  • Don't washing the module except lead pins.
  • To get good stability, ground impedance between the module GND flange and PCB GND pattern should be designed as low as possible.

VAPC , ηT, VSWR (in) vs. VDD (1) Supply Voltage VDD (V) ηT Efficiency ηT (%) 10 13 16 VAPC VSWRin Apc Voltage VAPC (V) V.S.W.R. (in) 1211 14 f=890 MHz, Pin=2 mW Pout=13 W, Tc=25°C, Rg=Rl=50 Ω VAPC , ηT, VSWR (in) vs. VDD (2) Supply Voltage VDD (V) ηT Efficiency ηT (%) 10 13 16 VAPC VSWRin Apc Voltage VAPC (V) V.S.W.R. (in) 1211 14 f=915 MHz, Pin=2 mW Pout=13 W, Tc=25°C, Rg=Rl=50 Ω

ηT, Pout vs. VAPC (1) Output Power Pout (W) Efficiency ηT (%) 0 0 ηT Apc Voltage VAPC (V) 4 82 f = 890 MHz Pin = 2 mW Tc = 25°C Rg = Rl = 50Ω Pout VDD =12.5 V VDD =15.6 V 10.8 V 15.6 V 12.5 V 10.8 V ηT, Pout vs. VAPC (2) Output Power Pout (W) Efficiency ηT (%) 0 0 ηT Apc Voltage VAPC (V) 4 82 f = 915 MHz Pin = 2 mW Tc = 25°C Rg = Rl = 50Ω Pout VDD =15.6 V VDD =15.6 V 12.5 V 10.8 V 10.8 V 12.5 V

ηT Efficiency ηT (%) 0 26 10 VAPC VSWRin Apc Voltage VAPC (V) V.S.W.R. (in) Input Power Pin (mW) VAPC , ηT, VSWR (in) vs. Pin (1) f=890 MHz, VDD =12.5 V, Pout=13 W, Tc=25°C, Rg=Rl=50 Ω ηT Efficiency ηT (%) 0 26 10 VAPC VSWRin Apc Voltage VAPC (V) V.S.W.R. (in) Input Power Pin (mW) VAPC , ηT, VSWR (in) vs. Pin (2) f=915 MHz, VDD =12.5 V, Pout=13 W, Tc=25°C, Rg=Rl=50 Ω

ηT Efficiency ηT (%) 890 895 905 915 VAPC VSWRin 900 910 Frequency f (MHz) VAPC , ηT, VSWR (in) vs. Frequency V.S.W.R. (in) Pin=2 mW, VDD =12.5 V, Pout=13 W, Tc=25°C, Rg=Rl=50 Ω Apc Voltage VAPC (V)

60.5 – 0.5 57.5 – 0.5 0.5 12.7 – 0.5 11.0 – 0.3 5.0+ 0.6 – 0.3 2.3 49.8 – 0.5 13.0 – 1 0.25 22.0 – 1 8.0 – 1 9.2 – 1 3.3 5 – 1 6.35 – 0.5 R1.6 213 4 Hitachi Code JEDEC EIAJ Weight (reference value) RF-B2 16 g Unit: mm

  1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 Copyright © Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. Hitachi Asia Pte. Ltd.

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