PCHMB50A6A NIEC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
IGBT MODULE MODULE MODULE MODULE Chopper 50A 600VChopper 50A 600VChopper 50A 600VChopper 50A 600V PCHMB50A6APCHMB50A6APCHMB50A6APCHMB50A6A ç C I R C U I T O U T L I N E D R A W I N G MAXMUM RATINGS (Tc=25°C) Item Symbol P CHMB50A6A Unit Collector-Emitter Voltage V CES 600 V Gate - Emitter Voltage V GES +/ - 20 V DC I C 50 Collector Current 1 ms I C 100 A Collector Power Dissipation P C 250 W Junction Temperature Range T j -40 to +150 °C Storage Temperature Range T stg -40 to +125 °C Isolation Voltage Terminal to Base AC, 1 min.) V ISO 2500 V Module Base to Heat sink Mounting Torque Bus Bar to Main Terminals FTOR 2.04 N•m ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Emitter Cut-Off Current I CES V CE=600V,VGE=0V - - 1.0 mA Gate-Emitter Leakage Current I GES V GE=+/- 20V,VCE=0V - - 1.0 µA Collector-Emitter Saturation Voltage V CE(sat) I C=50A,VGE=15V - 2.0 2.5 V Gate-Emitter Threshold Voltage V GE(th) V CE=5V,IC=50mA 4.0 - 8.0 V Input Capacitance C ies V CE=10V,VGE=0V,f=1MHz - 5000 - pF Rise Time ̓r ʵ 0.15 0.3 Turn-on Time ̓on ʵ 0.25 0.4 Fall Time ̓f ʵ 0.2 0.35 Switching Time Turn-off Time ̓off VCC= 300V RL= 6 ohm RG= 15 ohm µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Unit DC IF 50 Forward Current 1 ms IFM 100 A Characteristic Symbol Test Condition Min. Typ. Max. Unit Peak Forward Voltage V F I F=50A,VGE=0V - 1.9 2.4 V Reverse Recovery Time t rr IF=50A,VGE=-10V,di/dt=50A/µs - 0.15 0.25 µs THERMAL CHARACTERISTICS Characteristic Symbol Test Condition Min. Typ. Max. Unit IGBT - - 0.5 Thermal Impedance DIODE Rth(j-c) Junction to Case - - 1.0 °C/W 2- fasten- tab No 110 Dimension(mm) Approximate Weight : 220g
IGBT MODULE Chopper 50A 600VMODULE Chopper 50A 600VMODULE Chopper 50A 600VMODULE Chopper 50A 600V ççççççççççççççççççççççççççPCHMB50A6APCHMB50A6APCHMB50A6APCHMB50A6Aç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç 02468 1 00 100 Collector to Emitter Voltage V CE (V) Collector Current I C (A) Fig.1- Output Characteristics (Typical) TC=25 ℃ 10V 12V 15V VGE=20V 0 4 8 12 16 200 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 ℃ 50A IC=20A 100A 0 4 8 12 16 200 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=125 ℃ 50A IC=20A 100A 0 50 100 150 2000 100 150 200 250 300 350 400 Total Gate Charge Qg (nC) Collector to Emitter Voltage V CE (V) Gate to Emitter Voltage V GE (V) Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) VCE=300V 200V 100V RL=5Ω TC=25 ℃ 0.2 0.5 1 2 5 10 20 50 100 20020 100 200 500 1000 2000 5000 10000 20000 Collector to Emitter Voltage V CE (V) Capacitance C (pF) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) Cies Coes Cres VGE=0V f=1MHZ TC=25 ℃ 0 20 40 60 80 1000 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Collector Current I C (A) Switching Time t (μs) Fig.6- Collector Current vs. Switching Time (Typical) toff VCC=300V RG=15 Ω VGE=±15V TC=25 ℃ ton tr tf
ç IGBT MODULE Chopper 50A 600VMODULE Chopper 50A 600VMODULE Chopper 50A 600VMODULE Chopper 50A 600V PCHMB50A6APCHMB50A6APCHMB50A6APCHMB50A6A ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç 02468 1 00 100 Collector to Emitter Voltage V CE (V) Collector Current I C (A) Fig.1- Output Characteristics (Typical) TC=25 ℃ 10V 12V 15V VGE=20V 0 4 8 12 16 200 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 ℃ 50A IC=20A 100A 0 4 8 12 16 200 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=125 ℃ 50A IC=20A 100A 0 50 100 150 2000 100 150 200 250 300 350 400 Total Gate Charge Qg (nC) Collector to Emitter Voltage V CE (V) Gate to Emitter Voltage V GE (V) Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) VCE=300V 200V 100V RL=5Ω TC=25 ℃ 0.2 0.5 1 2 5 10 20 50 100 20020 100 200 500 1000 2000 5000 10000 20000 Collector to Emitter Voltage V CE (V) Capacitance C (pF) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) Cies Coes Cres VGE=0V f=1MHZ TC=25 ℃ 0 20 40 60 80 1000 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Collector Current I C (A) Switching Time t (μs) Fig.6- Collector Current vs. Switching Time (Typical) toff VCC=300V RG=15 Ω VGE=±15V TC=25 ℃ ton tr tf