PA102FDG ETC1

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤1% -6.2 ± 12 LIMITS 9.6 MAXIMUM -20 V A ID IDM TYPICAL Operating Junction & Storage Temperature Range Pulsed Drain Current1 °C-55 to 150 RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 115mΩ @VGS = -4.5V -10A ID -20V Continuous Drain Current 110 SYMBOL VDS TC = 25 ° C VGS W -10 UNITS -24 PD TJ, TSTG TC = 25 ° C Junction-to-Case RqJA Power Dissipation TC = 100 ° C Junction-to-Ambient THERMAL RESISTANCE SYMBOL RqJC 5 ° C / W Ver 1.1 1 2013-3-26

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -20 -0.45 -0.8 -1.2 ± 100 nA -10 -24 A 124 180 93 115 4.4 S 369 5.1 -10 -24 -1.2 V 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pusle width limited by maximum junction temperature. VDS = -5V, VGS = -4.5V VDS = -13.2V, VGS = 0V , TJ = 125 ° C VDS = VGS, ID = -250mA VDS = 0V, VGS = ± 12V Gate Threshold Voltage V IGSS VDS = -16V, VGS = 0VIDSS mA Qgd Qgs VGS = 0V, VDS = -10V, f = 1MHz Reverse Transfer Capacitance gfs DYNAMIC VDS = 0.5V(BR)DSS, VGS = -4.5V, ID = -3A Zero Gate Voltage Drain Current Gate-Body Leakage Crss Coss On-State Drain Current1 ID(ON) Drain-Source On-State Resistance1 IF = -10A, VGS = 0VForward Voltage1 nC Drain-Source Breakdown Voltage VGS = -2.5V, ID = -2A VDS = -5V, ID = -3A VGS(th) Forward Transconductance1 VGS = 0V, ID = -250mAV(BR)DSS Continuous Current Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) nSVDD = -10V, ID @ -1A, VGS = -5V, RG = 6Ω td(on) tr STATIC LIMITS UNITPARAMETER SYMBOL Total Gate Charge2 Gate-Source Charge2 Qg Fall Time2 TEST CONDITIONS IS VSD pF Ciss td(off) tf RDS(ON) VGS = -4.5V, ID = -3A mΩ Pulsed Current3 ISM A Input Capacitance Output Capacitance Gate-Drain Charge2 Ver 1.1 2 2013-3-26

P-Channel Enhancement Mode MOSFET Ver 1.1 3 2013-3-26

P-Channel Enhancement Mode MOSFET Ver 1.1 4 2013-3-26

P-Channel Enhancement Mode MOSFET Ver 1.1 5 2013-3-26