P8A60 DYELEC
Document overview
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Technical content
version:01 1of4 www.dyelec.com Insulated Triac Solid-state switch Microwave Duplicator VDRM ≥ 600 V IT = 8A IGT = 30mA VISO = 1500V Triac in a TO-220F plastic package. Pin Description Simplified outline Symbol 1 T1 2 T2
3 Gate
Symbol Parameter Conditions Min Max Unit Tstg Storage temperature -40 125 ℃ Tj Junction Temperature -40 125 ℃ VDRM Repetitive peak off-state voltage 600 V IT(RMS) RMS on-state current (Ta = 107 ℃) 8 A VGM Peak gate voltage 10 V IGM Peak gate current 2 A VISO Breakdown voltage (RMS, AC 1 minute) 1500 V P8A60
version:01 2of4 www.dyelec.com Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IDRM Repetitive peak off-state current VD = VDRM, single-phase, half wave, TJ = 125 ℃ 2 mA VTM Peak on-state voltage IT = 20A, fast measurements 1.4 V I+GT1 Gate Trigger Current VD=6V, RL=10 ohm 30 mA I-GT1 Gate Trigger Current VD=6V, RL=10 ohm 30 mA I-GT3 Gate Trigger Current VD=6V, RL=10 ohm 30 mA V+GT1 Gate trigger voltage VD=6V, RL=10 ohm 1.5 V V-GT1 Gate trigger voltage VD=6V, RL=10 ohm 1.5 V V-GT3 Gate trigger voltage VD=6V, RL=10 ohm 1.5 V VGD Does not trigger the gate voltage TJ=125℃,VD=1/2VDRM 0.2 V (dv/dt)c Critical rate of rise of off-state voltage (di/dt)c=-6.0A/ms 10 V/µS Rth(j-c) Thermal Resistance Junction to Case 3.7 ℃/W IH Maintain current Junction to Case 15 mA * Note 1: The drain current is limited by maximum junction temperature limit. * Note 2: Pulse Test, width ≤300μS, ≤2% duty cycle Insulated Triac P8A60
version:01 3of4 www.dyelec.com Characteristics Insulated Triac P8A60
version:01 4of4 www.dyelec.com Characteristics P8A60 Insulated Triac