P8503BMG ETC2

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Technical content

1 Nov-03-2004

N-Channel Logic Level Enhancement Mode Field Effect Transistor (Preliminary) P8503BMG SOT-23 Lead Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±20 V TC = 25 °C 3 Continuous Drain Current TC = 100 °C ID Pulsed Drain Current1 IDM 20 A TC = 25 °C 0.6 Power Dissipation TC = 100 °C PD 0.5 W Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 Lead Temperature (1/16” from case for 10 sec.) TL 275 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case Rθ JC 65 Junction-to-Ambient Rθ JA 230 °C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 25 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.8 1.2 2.5 V Gate-Body Leakage IGSS VDS = 0V, V GS = ±20V ±100 nA VDS = 20V, V GS = 0V 1 Zero Gate Voltage Drain Current IDSS VDS = 20V, V GS = 0V, TJ = 125 °C 10 µA On-State Drain Current1 ID(ON) VDS = 10V, V GS = 10V 3 A VGS = 4.5V, ID = 1.5A 70 115 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 3A 48 85 mΩ 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 85mΩ 3A G D S

2 Nov-03-2004

N-Channel Logic Level Enhancement Mode Field Effect Transistor (Preliminary) P8503BMG SOT-23 Lead Free NIKO-SEM Forward Transconductance1 gfs VDS = 15V, ID = 3A 16 S DYNAMIC Input Capacitance Ciss 450 Output Capacitance Coss 200 Reverse Transfer Capacitance Crss VGS = 0V, V DS = 15V, f = 1MHz pF Total Gate Charge2 Qg 15 Gate-Source Charge2 Qgs 2.0 Gate-Drain Charge2 Qgd VDS = 0.5V(BR)DSS, VGS = 10V, ID = 3A 7.0 nC Turn-On Delay Time2 td(on) 6.0 Rise Time2 tr VDS = 15V, RL = 1Ω 6.0 Turn-Off Delay Time2 td(off) ID ≅ 3A, VGS = 10V, RGS = 2.5Ω 20 Fall Time2 tf 5.0 nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 2.3 Pulsed Current3 ISM 4.6 A Forward Voltage1 VSD IF = IS, VGS = 0V 1.5 V 1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “ 10YWW” , DATE CODE or LOT # Orders for parts with Lead -Free plating can be placed using the PXXXXXXXG parts name

3 Nov-03-2004

N-Channel Logic Level Enhancement Mode Field Effect Transistor (Preliminary) P8503BMG SOT-23 Lead Free NIKO-SEM SOT-23 (M3) MECHANICAL DATA mm mm Dimension Min. Typ. Max. Dimension Min. Typ. Max. B 2.4 3 I 0.37 C 1.4 1.6 1.8 J D 2.7 2.9 3.1 K E 1 1.1 1.3 L F 0 0.1 M G 0.35 0.5 N D E G B F C A 1 3 I H