P8008BD ETC1

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. See Figure5,6 mJ LIMITS -55 to 150 W UNITS A RqJA Junction & Storage Temperature Range TYPICALSYMBOL Junction-to-Case IAS,IARAvalanche Current1 MAXIMUM PD TJ, TSTG TC = 25 ° C TC = 100 ° C Repetitive Avalanche Energy1 EAR 15A ID 80V Continuous Drain Current SYMBOL RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 80mΩ @VGS = 10V Drain-Source Voltage VDS Power Dissipation Junction-to-Ambient V80 ± 25VGS ° C / W THERMAL RESISTANCE RqJC TC = 25 ° C ID 3.2 Pulsed Drain Current1 IDM 60 L=0.1mHAvalanche Energy EAS 27 REV1.2 1 2014/6/16

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1 1.9 3 ± 100 nA 60 A 65 95 56 80 15 S 1070 1.35 Ω 18.6 4.5 3.8 290 160 15 A 1 V 55 nS 85 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. PARAMETER SYMBOL V IGSS IDSS gfs VDS = 64V, VGS = 0V VDS = 60V, VGS = 0V , TJ = 125° C VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 25V mA ID(ON) Drain-Source Breakdown Voltage VGS =4.5V, ID = 10A VDS = 5V, ID = 15A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage On-State Drain Current1 Qg VDS = 0.5V(BR)DSS, VGS = 10V, ID = 15A Qgd Qgs Crss nC VGS = 0V, VDS = 0V, f = 1MHz Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 15A pF Ciss Coss DYNAMIC mΩ IF = IS, VGS = 0V Input Capacitance Output Capacitance Gate-Drain Charge2 Gate-Source Charge2 VDS = 5V, VGS = 10V LIMITS UNITS Gate Threshold Voltage IS VSD Total Gate Charge2 Gate Resistance Reverse Transfer Capacitance VGS = 0V, VDS = 25V, f = 1MHz Fall Time2 Forward Voltage1 Continuous Current Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) nSVDS = 40V, RL=15Ω ID @ 15A, VGS = 10V, RGEN = 6Ω td(on) tr td(off) tf STATIC IF=15A,dIF/dt=100A/mSReverse Recovery Time Reverse Recovery Charge trr Qrr TEST CONDITIONS Rg REV1.2 2 2014/6/16

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N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV1.2 7 2014/6/16