P6SMB6.8CA-H

P6SMB6.8CA-H BOURNS

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 5

Technical content

Features

n RoHS compliant* and halogen free** n Surface Mount SMB package n Breakdown Voltage: 6.8 to 550 volts n Peak Pulse Power: 600 watts n Typical temperature coefficient: ∆VBR = 0.1 % x VBR @ 25 °C x ∆T

Applications

n IEC 61000-4-2 ESD (Min. Level 4) n IEC 61000-4-4 EFT n IEC 61000-4-5 Surge Maximum Characteristics (@ TA = 25 °C Unless Otherwise Noted) P6SMB Transient Voltage Suppressor Diode Series * RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. **Bourns considers a product to be “halogen free” if (a) the Bromine (Br) content is 900 ppm or less; (b) the Chlorine (Cl) content is 900 ppm or less; and (c) the total Bromine (Br) and Chlorine (Cl) content is 1500 ppm or less. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Parameter Symbol Value Unit Peak Pulse Power Dissipation (TP = 1 ms) (Note 1,2) PPK 600 Watts Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Note 3) IFSM 100 Amps Maximum Instantaneous Forward Voltage @ IPP = 50 A (For Unidirectional Units Only) P6SMB6.8A ~ P6SMB200A P6SMB220A ~ P6SMB550A VF 3.5

5.0 Volts

Operating Temperature Range TJ -55 to +150 °C Storage Temperature Range TSTG -55 to +150 °C 1. Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve. 2. Thermal Resistance Junction to Lead. 3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only). General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AA (SMB) size format. The Transient Voltage Suppressor series offers a choice of Breakdown Voltages from 6.8 V up to 550 V. Typical fast response times are less than 1.0 picosecond for unidirectional devices and less than 5.0 picoseconds for bidirectional devices from 0 V to Minimum Breakdown Voltage. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration minimizes roll away. How to Order P6SMB 6.8 CA - H Series P6SMB= SMB/DO-214AA Breakdown Voltage 6.8 to 550 = 6.8 to 550 VBD (Volts) Suffix A = 5 % Tolerance Unidirectional Device CA = 5 % Tolerance Bidirectional Device Reel (blank) = 13 inch reel -H = 7 inch reel *RoHS COMPLIANT LEAD FREE *RoHS COMPLIANTVERSIONS AVAILABLE LEAD FREE VERSIONS ARE RoHS COMPLIANT* Asia-Pacific: Tel: +886-2 2562-4117 Email: asiacus@bourns.com Europe: Tel: +36 88 520 390 Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 Email: americus@bourns.com www.bourns.com

Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. P6SMB Transient Voltage Suppressor Diode Series Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Notes: 1. Suffix ‘A’ denotes a 5 % tolerance unidirectional device. 2. Suffix ‘CA’ denotes a 5 % tolerance bidirectional device. 3. For bidirectional devices with a VR of 10 volts or less, the IR limit is double. Unidirectional Device Bidirectional Device Breakdown Voltage VBR (Volts) Working Peak Reverse Voltage Maximum Reverse Leakage @ VRWM Maximum Reverse Voltage @ IRSM Maximum Reverse Surge Current Part No. Marking Part No. Marking Min. Max. @ IT (mA) VRWM (V) IR (μA) VRSM (V) IRSM (A) P6SMB20A 20A P6SMB20CA 20C 19 21 1 17.1 1 27.7 22 P6SMB39A 39A P6SMB39CA 39C 37.1 41 1 33.3 1 53.9 11.3 P6SMB56A 56A P6SMB56CA 56C 53.2 58.8 1 47.8 1 77 7.9 P6SMB62A 62A P6SMB62CA 62C 58.9 65.1 1 53 1 85 7.2 P6SMB68A 68A P6SMB68CA 68C 64.6 71.4 1 58.1 1 92 6.6 P6SMB75A 75A P6SMB75CA 75C 71.3 78.8 1 64.1 1 103 5.9 P6SMB82A 82A P6SMB82CA 82C 77.9 86.1 1 70.1 1 113 5.4 P6SMB91A 91A P6SMB91CA 91C 86.5 95.5 1 77.8 1 125 4.9 P6SMB100A 100A P6SMB100CA 100C 95 105 1 85.5 1 137 4.5 P6SMB110A 110A P6SMB110CA 110C 105 116 1 94 1 152 4 P6SMB120A 120A P6SMB120CA 120C 114 126 1 102 1 165 3.7 P6SMB130A 130A P6SMB130CA 130C 124 137 1 111 1 179 3.4 P6SMB150A 150A P6SMB150CA 150C 143 158 1 128 1 207 2.9 P6SMB160A 160A P6SMB160CA 160C 152 168 1 136 1 219 2.8 P6SMB170A 170A P6SMB170CA 170C 162 179 1 145 1 234 2.6 P6SMB180A 180A P6SMB180CA 180C 171 189 1 154 1 246 2.5 P6SMB200A 200A P6SMB200CA 200C 190 210 1 171 1 274 2.2 P6SMB220A 220A P6SMB220CA 220C 209 231 1 185 1 328 1.9 P6SMB250A 250A P6SMB250CA 250C 237 263 1 214 1 344 1.8 P6SMB300A 300A P6SMB300CA 300C 285 315 1 256 1 414 1.5 P6SMB350A 350A P6SMB350CA 350C 332 368 1 300 1 482 1.3 P6SMB400A 400A P6SMB400CA 400C 380 420 1 342 1 548 1.1 P6SMB440A 440A P6SMB440CA 440C 418 462 1 376 1 602 1 P6SMB480A 480A P6SMB480CA 480C 456 504 1 408 1 658 0.9 P6SMB510A 510A P6SMB510CA 510C 485 535 1 434 1 698 0.9 P6SMB530A 530A P6SMB530CA 530C 503.5 556.5 1 477 1 725 0.8 P6SMB540A 540A P6SMB540CA 540C 513 567 1 486 1 740 0.8 P6SMB550A 550A P6SMB550CA 550C 522.5 577.5 1 495 1 760 0.8

3312 - 2 mm SMD Trimming Potentiometer P6SMB Transient Voltage Suppressor Diode Series Rating & Characteristic Curves Pulse Derating Curve Maximum Non-Repetitive Surge Current Pulse Waveform Typical Junction Capacitance Pulse Rating Curve Steady State Power Derating Curve 100 05 025 75 100 150125 175 200 Ambient Temperature ( Peak Pulse Derating in Percent of Peak Power or Current °C) 5.0 3.0 4.0 2.0 1.0 0.0 05 025 75 100 150125 175 200 TL, Lead Temperature (°C) RM(AV) Steady State Power Dissipation (W)

60 Hz Resistive or

0 1.0 2.0 3.0 4.0 T, Time (ms) IP, Peak Pulse Current (%) TA=25 °C TP TR=10 µs Half value= IRSM Peak value (IRSM) Pulse width (TP) is defined as that point where the peak current decays to 50 % of IPSM. 10 x 1000 waveform as defined by R.E.A. Peak Forward Surge Current (Amps) 120 100 1 25 10 20 50 100 Number of Cycles at 60 Hz Pulse Width 8.3 ms Single Half Sine-Wave 100 1.0 0.1 0.1 µs 1.0 µs 10 µs 10 ms TP, Pulse Width PP, Peak Power (KW) 100 µs 1.0 ms TA = 25 °C Non-repetitive Pulse Waveform Shown in Pulse Waveform Graph 100 1000 10000 101 100 1000 CJ - Junction Capacitance (pF) Bidirectional V = 0 V Unidirectional V = 0 V Bidirectional @VR Unidirectional @VR T = 25 ° C f = 1.0 MHz Vsig = 50 mVp-p V BR - Reverse Breakdown Voltage (V) 100 05 025 75 100 150125 175 200 Ambient Temperature ( Peak Pulse Derating in Percent of Peak Power or Current °C) 5.0 3.0 4.0 2.0 1.0 0.0 05 025 75 100 150125 175 200 TL, Lead Temperature (°C) RM(AV) Steady State Power Dissipation (W) 0 1.0 2.0 3.0 4.0 T, Time (ms) IP, Peak Pulse Current (%) TA=25 °C TP TR=10 µs Half value= IRSM Peak value (IRSM) Pulse width (TP) is defined as that point where the peak current decays to 50 % of IPSM. 10 x 1000 waveform as defined by R.E.A. Peak Forward Surge Current (Amps) 120 100 1 25 10 20 50 100 Number of Cycles at 60 Hz Pulse Width 8.3 ms Single Half Sine-Wave 100 1.0 0.1 0.1 µs 1.0 µs 10 µs 10 ms TP, Pulse Width PP, Peak Power (KW) 100 µs 1.0 ms TA = 25 °C Non-repetitive Pulse Waveform Shown in Pulse Waveform Graph 100 1000 10000 101 100 1000 CJ - Junction Capacitance (pF) Bidirectional V = 0 V Unidirectional V = 0 V Bidirectional @VR Unidirectional @VR T = 25 ° C f = 1.0 MHz Vsig = 50 mVp-p V BR - Reverse Breakdown Voltage (V) 100 05 025 75 100 150125 175 200 Ambient Temperature ( Peak Pulse Derating in Percent of Peak Power or Current °C) 5.0 3.0 4.0 2.0 1.0 0.0 05 025 75 100 150125 175 200 TL, Lead Temperature (°C) RM(AV) Steady State Power Dissipation (W) 0 1.0 2.0 3.0 4.0 T, Time (ms) IP, Peak Pulse Current (%) TA=25 °C TP TR=10 µs Half value= IRSM Peak value (IRSM) Pulse width (TP) is defined as that point where the peak current decays to 50 % of IPSM. 10 x 1000 waveform as defined by R.E.A. Peak Forward Surge Current (Amps) 120 100 1 25 10 20 50 100 Number of Cycles at 60 Hz Pulse Width 8.3 ms Single Half Sine-Wave 100 1.0 0.1 0.1 µs 1.0 µs 10 µs 10 ms TP, Pulse Width PP, Peak Power (KW) 100 µs 1.0 ms TA = 25 °C Non-repetitive Pulse Waveform Shown in Pulse Waveform Graph 100 1000 10000 101 100 1000 CJ - Junction Capacitance (pF) Bidirectional V = 0 V Unidirectional V = 0 V Bidirectional @VR Unidirectional @VR T = 25 ° C f = 1.0 MHz Vsig = 50 mVp-p V BR - Reverse Breakdown Voltage (V) 100 05 025 75 100 150125 175 200 Ambient Temperature ( Peak Pulse Derating in Percent of Peak Power or Current °C) 5.0 3.0 4.0 2.0 1.0 0.0 05 025 75 100 150125 175 200 TL, Lead Temperature (°C) RM(AV) Steady State Power Dissipation (W) 0 1.0 2.0 3.0 4.0 T, Time (ms) IP, Peak Pulse Current (%) TA=25 °C TP TR=10 µs Half value= IRSM Peak value (IRSM) Pulse width (TP) is defined as that point where the peak current decays to 50 % of IPSM. 10 x 1000 waveform as defined by R.E.A. Peak Forward Surge Current (Amps) 120 100 1 25 10 20 50 100 Number of Cycles at 60 Hz Pulse Width 8.3 ms Single Half Sine-Wave 100 1.0 0.1 0.1 µs 1.0 µs 10 µs 10 ms TP, Pulse Width PP, Peak Power (KW) 100 µs 1.0 ms TA = 25 °C Non-repetitive Pulse Waveform Shown in Pulse Waveform Graph 100 1000 10000 101 100 1000 CJ - Junction Capacitance (pF) Bidirectional V = 0 V Unidirectional V = 0 V Bidirectional @VR Unidirectional @VR T = 25 ° C f = 1.0 MHz Vsig = 50 mVp-p V BR - Reverse Breakdown Voltage (V) 100 05 025 75 100 150125 175 200 Ambient Temperature ( Peak Pulse Derating in Percent of Peak Power or Current °C) 5.0 3.0 4.0 2.0 1.0 0.0 05 025 75 100 150125 175 200 TL, Lead Temperature (°C) RM(AV) Steady State Power Dissipation (W) 0 1.0 2.0 3.0 4.0 T, Time (ms) IP, Peak Pulse Current (%) TA=25 °C TP TR=10 µs Half value= IRSM Peak value (IRSM) Pulse width (TP) is defined as that point where the peak current decays to 50 % of IPSM. 10 x 1000 waveform as defined by R.E.A. Peak Forward Surge Current (Amps) 120 100 1 25 10 20 50 100 Number of Cycles at 60 Hz Pulse Width 8.3 ms Single Half Sine-Wave 100 1.0 0.1 0.1 µs 1.0 µs 10 µs 10 ms TP, Pulse Width PP, Peak Power (KW) 100 µs 1.0 ms TA = 25 °C Non-repetitive Pulse Waveform Shown in Pulse Waveform Graph 100 1000 10000 101 100 1000 CJ - Junction Capacitance (pF) Bidirectional V = 0 V Unidirectional V = 0 V Bidirectional @VR Unidirectional @VR T = 25 ° C f = 1.0 MHz Vsig = 50 mVp-p V BR - Reverse Breakdown Voltage (V) 100 05 025 75 100 150125 175 200 Ambient Temperature ( Peak Pulse Derating in Percent of Peak Power or Current °C) 5.0 3.0 4.0 2.0 1.0 0.0 05 025 75 100 150125 175 200 TL, Lead Temperature (°C) RM(AV) Steady State Power Dissipation (W) 0 1.0 2.0 3.0 4.0 T, Time (ms) IP, Peak Pulse Current (%) TA=25 °C TP TR=10 µs Half value= IRSM Peak value (IRSM) Pulse width (TP) is defined as that point where the peak current decays to 50 % of IPSM. 10 x 1000 waveform as defined by R.E.A. Peak Forward Surge Current (Amps) 120 100 1 25 10 20 50 100 Number of Cycles at 60 Hz Pulse Width 8.3 ms Single Half Sine-Wave 100 1.0 0.1 0.1 µs 1.0 µs 10 µs 10 ms TP, Pulse Width PP, Peak Power (KW) 100 µs 1.0 ms TA = 25 °C Non-repetitive Pulse Waveform Shown in Pulse Waveform Graph 100 1000 10000 101 100 1000 CJ - Junction Capacitance (pF) Bidirectional V = 0 V Unidirectional V = 0 V Bidirectional @VR Unidirectional @VR T = 25 ° C f = 1.0 MHz Vsig = 50 mVp-p V BR - Reverse Breakdown Voltage (V) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.

3312 - 2 mm SMD Trimming Potentiometer Product Dimensions Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. P6SMB Transient Voltage Suppressor Diode Series Recommended Footprint Physical Specifications No cathode band indicates bidirectional device DIMENSIONS: MM (INCHES) a c B F E C b MM (INCHES)DIMENSIONS: G D ACATHODE BAND (FOR UNIDIRECTIONAL PRODUCTS ONLY) a c B F E C b MM (INCHES)DIMENSIONS: G D ACATHODE BAND (FOR UNIDIRECTIONAL PRODUCTS ONLY) Dimension SMB (DO-214AA) A 4.06 - 4.57 (0.160 - 0.180) B 3.30 - 3.94 (0.130 - 0.155) C 1.95 - 2.20 (0.077 - 0.087) D 5.21 - 5.59 (0.205 - 0.220) E 0.05 - 0.203 (0.002 - 0.008) F 2.13 - 2.44 (0.080 - 0.103) G 0.76 - 1.52 (0.030 - 0.060) DIMENSIONS: MM (INCHES) Dimension SMB (DO-214AA) a (Max.) 2.69 (0.106) b (Min.) 2.10 (0.083) c (Min.) 1.27 (0.050)

CDDFN5-0504N - TVS/Steering Diode Array Packaging Information PA F E T 120 ° D D1 C Index Hole Pin 1 Location W B 10 pitches (min.) Direction of Feed 10 pitches (min.) End Trailer Device Leader Start d The product will be dispensed in tape and reel format (see diagram below). Devices are packed in accordance with EIA standard RS-481-A and specifications shown here. DIMENSIONS: MM (INCHES) REV. 06/16 P6SMB Transient Voltage Suppressor Diode Series Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Item Symbol SMB (DO-214AA)

7 Inch Reel 13 Inch Reel

Carrier Width A 3.67 ± 0.20 (0.144 ± 0.008) Carrier Length B 5.60 ± 0.20 (0.220 ± 0.008) Carrier Depth C 2.57 ± 0.20 (0.101 ± 0.008) Sprocket Hole d 1.50 ± 0.10 (0.059 ± 0.004) Reel Outside Diameter D 178 (7.008) 330 (12.992) Reel Inner Diameter D1 50.0 (1.969) MIN. Feed Hole Diameter D2 13.0 ± 0.20 (0.512 ± 0.008) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 5.50 ± 0.05 (0.217 ± 0.002) Punch Hole Pitch P 8.00 ± 0.10 (0.315 ± 0.004) Sprocket Hole Pitch P0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P1 2.00 ± 0.05 (0.079 ± 0.002) Overall Tape Thickness T 0.30 ± 0.10 (0.012 ± 0.004) Tape Width W 12.00 ± 0.30 (0.472 ± 0.012) Reel Width W1 18.4 (0.724) MAX. Quantity per Reel -- 500 3,000