P6803NAG

P6803NAG ETC2

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Technical content

1 MAR-09-2006

N- & P-Channel Enhancement Mode Field Effect Transistor P6803NAG TSOP-6 Lead-Free NIKO-SEM PRODUCT SUMMARY V (BR)DSS R DS(ON) I D N-Channel 30 68mƸ 3.5A P-Channel -30 145mƸ -2A ABSOLUTE MAXIMUM RATINGS (T C = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage V DS 30 -30 V Gate-Source Voltage V GS ±20 ±20 V Continuous Drain Current TC = 70 °C ID 2.8 -1.8 Pulsed Drain Current1 I DM 10 -10 A TC = 25 °C 1.15 Power Dissipation TC = 70 °C PD 0.73 W Junction & Storage Temperature Range T j, Tstg -55 to 150 Lead Temperature (1/16” from case for 10 sec.) T L 275 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient t Ù5sec RθJA 110 °C / W Junction-to-Ambient Steady State RθJA 150 °C / W Junction-to-Lead Steady State RθJL 80 °C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% G : GATE D : DRAIN S : SOURCE D1 S1 D2 S2 G2G1 12 3 546

2 MAR-09-2006

N- & P-Channel Enhancement Mode Field Effect Transistor P6803NAG TSOP-6 Lead-Free NIKO-SEM ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS UNIT PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX STATIC VGS = 0V, ID = 250µA Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = -250µA N-Ch P-Ch -30 VDS = VGS, ID = 250µA Gate Threshold Voltage V GS(th) VDS = VGS, ID = -250µA N-Ch P-Ch 1.5 -1.5 2.5 -2.5 V VDS = 0V, VGS = ±20V Gate-Body Leakage I GSS VDS = 0V, VGS = ±20V N-Ch P-Ch ±100 ±100 nA VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V N-Ch P-Ch VDS = 20V, VGS = 0V, TJ = 55 °CZero Gate Voltage Drain Current I DSS VDS = -20V, VGS = 0V, TJ = 55 °C N-Ch P-Ch -10 µA VDS = 5V, VGS = 10V On-State Drain Current1 I D(ON) VDS =-5V, VGS = -10V N-Ch P-Ch A VGS = 4.5V, ID = 2A VGS = -4.5V, ID = -1.5A N-Ch P-Ch 185 245 VGS = 10V, ID = 3.5A Drain-Source On-State Resistance1 RDS(ON) VGS = -10V, ID = -2.3A N-Ch P-Ch 115 145 mƸ VDS = 5V, ID = 2.5A Forward Transconductance1 g fs VDS = -5V, ID = -2A N-Ch P-Ch 4.5 S DYNAMIC Input Capacitance C iss N-Ch P-Ch 200 190 Output Capacitance C oss N-Ch P-Ch Reverse Transfer Capacitance C rss N-Channel VGS = 0V, VDS = 15V, f = 1MHz P-Channel VGS = 0V, VDS = -15V, f = 1MHz N-Ch P-Ch pF

3 MAR-09-2006

N- & P-Channel Enhancement Mode Field Effect Transistor P6803NAG TSOP-6 Lead-Free NIKO-SEM Total Gate Charge2 Q g N-Ch P-Ch 6.5 4.5 8.5 6.0 Gate-Source Charge2 Q gs N-Ch P-Ch 1.2 1.2 Gate-Drain Charge2 Q gd N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, ID = 2.5A P-Channel VDS = 0.5V(BR)DSS, VGS = -10V, ID = -2A N-Ch P-Ch 1.6 0.9 nC Turn-On Delay Time2 t d(on) N-Ch P-Ch Rise Time2 t r N-Ch P-Ch Turn-Off Delay Time2 t d(off) N-Ch P-Ch Fall Time2 t f N-Channel VDS = 15V, RL = 15Ƹ ID ≅ 1A, VGS = 10V, RGEN = 6Ƹ P-Channel VDS = -15V, RL = 15Ƹ ID ≅ -1A, VGS = -10V, RGEN = 6Ƹ N-Ch P-Ch nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) IF = 0.8A, VGS = 0V Forward Voltage1 V SD IF = -0.8A, VGS = 0V N-Ch P-Ch 1.2 -1.2 V IF = 0.8A, dlF/dt = 100A / µS Reverse Recovery Time t rr IF = -0.8A, dlF/dt = 100A / µS N-Ch P-Ch nS 1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. REMARK: THIS PRODUCT MARKED WITH “51YWW” Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 12 3 546 51YWW Marking Description: 5 - N+P MOSFET 1 - Serial Number Y - Year W - Week

4 MAR-09-2006

N- & P-Channel Enhancement Mode Field Effect Transistor P6803NAG TSOP-6 Lead-Free NIKO-SEM N-CHANNEL 0 01 2 3 4 VGS= 10V 6.0V 4.5V 4.0V 3.5V 3.0V On-Region Characteristics. ID, Drain-source current(A) VDS, Drain-Source Voltage(V) 0.275 0.225 0.125 0.175 0.075 0.025 2 4 68 1 0 VGS, Gate to Source Voltage(V) RDS(ON), On-resistance(OHM) ID=2A TA= 125°C TA= 25°C On-Resistance Variation with Gate-to-Source Voltage. 654321 VGS, Gate to Source Voltage(V) ID, Drain Current(A) VDS= 5V TA= -55°C 125°C 25°C Transfer Characteristics. 0.1 0.01 0.001 0.0001 VSD, Body Diode Forword Voltage(V) Is, Reverse Drain Current (A) VGS= 0V TA= 125°C 25°C -55°C Body Diode Forword Voltage Variation with Source Current and Temperature. 0.8 1.2 1.6 1.4 0.6 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature(°C) ID= 3.5A VGS= 10V On-Resistance Variation with Temperature. RDS(ON), Normalized Drain-source on-resistance 1.8 1.6 1.4 1.2 0.8 02 4 6 8 1 0 VGS= 4.0V 4.5V 5.0V 6.0V 7.0V 10V ID, Drain Current(A) RDS(ON), Noemalized Drain-source on-resistance On-Resistance Variation with Drain Current and Gate Voltage.

5 MAR-09-2006

N- & P-Channel Enhancement Mode Field Effect Transistor P6803NAG TSOP-6 Lead-Free NIKO-SEM 01 2345 7 6 10V 15VVDS= 5VID = 3.5A Qg (nC) Gate-Charge Characteristics VGS (Voltage) 400 300 200 100 0 5 10 15 20 25 30 Capacitance(pF) Crss Coss Ciss Capacitance Characteristics VDS,Drain to Source Voltage(V) 0.1 0.3 1 3 10 30 50 VDS, Drain-Source Voltage(V) 0.03 0.1 0.3 ID, Drain Current(A)VGS= 10V SINGLE PULSE RǀJA=150°C/W TA=25°C RDS(ON)LIMIT Maximum Safe Operating Area. 100us 1ms 10ms 100ms 1sDC 0.01 Single Pulse Maximum Power Dissipation. 0.01 0.1 1 10 100 300 Power(W) Single pulse time(SEC) VGS= 10V SINGLE PULSE RǀJA=150°C/W TA=25°C

6 MAR-09-2006

N- & P-Channel Enhancement Mode Field Effect Transistor P6803NAG TSOP-6 Lead-Free NIKO-SEM P-CHANNEL On-Region Characteristics ID,Drain Current(A) - VDS,Drain-Source Voltage(V) 543210 VGS= -10V - 6.0V - 4.5V - 4.0V - 3.5V On-Resistance Variation with Drain Current and Gate Voltage. RDS(ON),Normalized Drain-Source On-Resistance 1086402 -10.0V VGS=-3.5V 0.5 1.5 2.5 - ID,Drain Current(A) - 4.5V - 4.0V - 5.0V - 6.0V On-Resistance Variation with Temperature TJ,Junction Temperature(°C) RDS(ON),Normalized Drain-Source On-Resistance VGS= -10V 1.6 1.4 1.2 0.8 0.6 1501251007550250-25-50 ID= -2.3A On-Resistance Variation with Gate-to-Source Voltage. RDS(ON),On-Resistance(OHM) - VGS,Gate To Source Voltage(V) TA=125°C TA=25°C 0.4 0.3 0.2 0.1 106542 ID = -1.5A Transfer Characteristics -ID,Drain Current(A) 125°C 25°C 4.53.52.51.5 VDS= - 5V TA= - 55°C -VGS,Gate To Source Voltage(V) Body Diode Forward Voltage Variation With Source Current and Temperature. -IS,Reverse Drain Current(A) -VSD,Body Diode Forward Voltage(V) VGS=0V TA=125°C 25°C 0.1 0.01 0.001 0.0001 - 55°C

7 MAR-09-2006

N- & P-Channel Enhancement Mode Field Effect Transistor P6803NAG TSOP-6 Lead-Free NIKO-SEM 01 23 45 VDS= -5VID = -2.0A VGS (Voltage) Qg (nC) Gate-Charge Characteristics -10V 5 6 -15V 0.1 0.3 1 3 10 30 50 VDS, Drain-Source Voltage(V) 0.03 0.1 0.3 ID, Drain Current(A)VGS= 10V SINGLE PULSE RǀJA=150°C/W TA=25°C RDS(ON)LIMIT Maximum Safe Operating Area. 100us 1ms 10ms 100ms 1sDC 0.01 Single Pulse Maximum Power Dissipation. 0.01 0.1 1 10 100 300 Power(W) Single pulse time(SEC) VGS= 10V SINGLE PULSE RǀJA=150°C/W TA=25°C 0.5 0.2 0.1 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1 10 100 300 P(pk)t1 TJ-TA=P*RǀJA(t) Duty Cycle, D= t1/ t2 RǀJA=150°C/W RǀJA(t) = r(t) * Rǀ+" t1 Time(Sec) r(t), Normalized Effective Transient Thermal Resistance Transient Thermal Response Curve. D=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse Crss Coss Ciss Capacitance(pF) 302520151050 100 200 300 400 Capacitance Characteristics VDS,Drain to Source Voltage(V)

8 MAR-09-2006

N- & P-Channel Enhancement Mode Field Effect Transistor P6803NAG TSOP-6 Lead-Free NIKO-SEM TSOP- 6 MECHANICAL DATA mm mm Dimension Min. Typ. Max. Dimension Min. Typ. Max. A 0.95 H 0.08 0.13 0.2 C 1.5 1.6 1.7 J D 2.7 2.9 3.1 K E 0.7 1.2 L F 0 0.15 M G 0.3 0.4 0.5 N D E F B G A C H I