P6002AD LITTELFUSE
Document overview
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Technical content
High Surge Current SIDACtor Device http://www.littelfuse.com 2 - 60 © 2004 Littelfuse, Inc. +1 972-580-7777 SIDACtor ® Data Book and Design Guide High Surge Current SIDACtor Device This SIDACtor device is a 1000 A solid state protection device offered in a TO-220 package. It protects equipment located in the severe surge environment of Community Antenna TV (CATV) applications. This device can replace the gas tubes traditionally used for station protection because SIDACtor devices have much tighter voltage tolerances. * For surge ratings, see table below. * For surge ratings, see table below. General Notes:
- All measurements are made at an ambient temperature of 25 °C. I PP applies to -40 °C through +85 °C temperature range.
- I PP is a repetitive surge rating and is guaranteed for the life of the product.
- Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
- V DRM is measured at IDRM.
- V S is measured at 100 V/µs.
- Special voltage (V S and VDRM) and holding current (IH) requirements are available upon request.
- Off-state capacitance (C O) is measured at 1 MHz with a 2 V bias and is a typical value. Electrical Parameters Part Number * VDRM Volts VS Volts VT Volts IDRM µAmps IS mAmps IT Amps IH mAmps CO pF Pins 1-3 P6002AD 550 700 5.5 5 800 2.2 50 60 (T) (R) (G) Electrical Parameters Part Number * VDRM Volts VS Volts VT Volts IDRM µAmps IS mAmps IT Amps IH mAmps CO pF Pins 1-3 P3100AD 280 360 5.5 5 800 2.2 120 115 Surge Ratings Series IPP 8x20 µs Amps IPP 10x1000 µs Amps ITSM 60 Hz Amps di/dt Amps/µs D 1000 250 120 500
High Surge Current SIDACtor Device © 2004 Littelfuse, Inc. 2 - 61 http://www.littelfuse.com SIDACtor® Data Book and Design Guide +1 972-580-7777 Data Sheets Note: P6002AD is shown. P3100AD has no center lead. Thermal Considerations Package Symbol Parameter Value Unit Modified TO-220 TJ Operating Junction Temperature Range -40 to +150 °C TS Storage Temperature Range -65 to +150 °C RθJA Thermal Resistance: Junction to Ambient 60 °C/W PIN 1 PIN 2 PIN 3 IH IT IS IDRM VDRMVT +V-V VS IH IT IS IDRM VDRMVT +V-V VS V-I Characteristics 100 tr td Peak Value Half Value t – Time (µs) IPP – Peak Pulse Current – %IPP tr = rise time to peak value td = decay time to half value Waveform = tr x td tr x td Pulse Wave-form -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (TJ) – ˚C Percent of VS Change – % 25 ˚C Normalized VS Change versus Junction Temperature 0.4 -40 -20 0 20 40 60 80 100 120 140 160 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Case Temperature (TC ) – ˚C Ratio of IH IH (TC = 25 ˚C) 25 ˚C Normalized DC Holding Current versus Case Temperature