P5806NVG ETC2

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Technical content

1 Oct-01-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P5806NVG SOP-8 Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage VDS 60 -60 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current TC = 70 °C ID 4 -3 Pulsed Drain Current1 IDM 20 -20 A TC = 25 °C 2 Power Dissipation TC = 70 °C PD 1.3 W Junction & Storage Temperature Range Tj, Tstg -55 to 150 Lead Temperature (1/16” from case for 10 sec.) TL 275 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient Rθ JA 62.5 °C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS UNIT PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX STATIC VGS = 0V, ID = 250µA Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA N-Ch P-Ch -60 VDS = VGS, ID = 250µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA N-Ch P-Ch 1.0 -1.0 1.5 -1.5 2.5 -2.5 V VDS = 0V, V GS = ±20V Gate-Body Leakage IGSS VDS = 0V, V GS = ±20V N-Ch P-Ch ±100 ±100 nA G : GATE D : DRAIN S : SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 60 58mΩ 4.5A P-Channel -60 90mΩ -3.5A

2 Oct-01-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P5806NVG SOP-8 Lead-Free NIKO-SEM VDS = 48V, V GS = 0V VDS = -48V, VGS = 0V N-Ch P-Ch VDS = 40V, V GS = 0V, TJ = 55 °C Zero Gate Voltage Drain Current IDSS VDS = -40V, VGS = 0V, TJ = 55 °C N-Ch P-Ch -10 µA VDS = 5V, V GS = 10V On-State Drain Current1 ID(ON) VDS =-5V, VGS = -10V N-Ch P-Ch -20 A VGS = 4.5V, ID = 4A VGS = -4.5V, ID = -3A N-Ch P-Ch 100 135 VGS = 10V, ID = 4.5A Drain-Source On-State Resistance1 RDS(ON) VGS = -10V, ID = -3.5A N-Ch P-Ch mΩ VDS = 10V, ID = 4.5A Forward Transconductance1 gfs VDS = -5V, ID = -3.5A N-Ch P-Ch S DYNAMIC Input Capacitance Ciss N-Ch P-Ch 650 630 Output Capacitance Coss N-Ch P-Ch Reverse Transfer Capacitance Crss N-Channel VGS = 0V, V DS = 25V, f = 1MHz P-Channel VGS = 0V, V DS = -30V, f = 1MHz N-Ch P-Ch pF Total Gate Charge2 Qg N-Ch P-Ch Gate-Source Charge2 Qgs N-Ch P-Ch 2.4 2.1 Gate-Drain Charge2 Qgd N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, ID = 4.5A P-Channel VDS = 0.5V(BR)DSS, VGS = -10V, ID = -3.5A N-Ch P-Ch 2.6 2.5 nC Turn-On Delay Time2 td(on) N-Ch P-Ch Rise Time2 tr N-Ch P-Ch Turn-Off Delay Time2 td(off) N-Ch P-Ch Fall Time2 tf N-Channel VDD = 30V ID ≅ 1A, VGS = 10V, RGEN = 6Ω P-Channel VDD = -30V ID ≅ -1A, VGS = -10V, RGEN = 6Ω N-Ch P-Ch nS

3 Oct-01-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P5806NVG SOP-8 Lead-Free NIKO-SEM SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS N-Ch P-Ch 1.3 -1.3 Pulsed Current3 ISM N-Ch P-Ch 2.6 -2.6 A IF = IS A, V GS = 0V Forward Voltage1 VSD IF = IS A, V GS = 0V N-Ch P-Ch V 1Pulse test : Pulse Widt h ≤ 300 µsec, Duty Cycle ≤ 2%. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P5806NVG”, DATE CODE or LOT # Orders for parts with Lead -Free plating can be placed using the PXX XXXXG parts name.

4 Oct-01-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P5806NVG SOP-8 Lead-Free NIKO-SEM N-CHANNEL Body Diode Forward Voltage Variation with Source Current and Temperature 25° C T = 125° C 0.6 0.1 Is - Reverse Drain Current(A) 0.0001 0.001 0.01 SD 0.2 0.4 V = 0V 100 A GS 0.8 1.0 -55° C 1.2 V - Body Diode Forward Voltage(V)

5 Oct-01-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P5806NVG SOP-8 Lead-Free NIKO-SEM

6 Oct-01-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P5806NVG SOP-8 Lead-Free NIKO-SEM P-CHANNEL Body Diode Forward Voltage Variation with Source Current and Temperature T = 125° C -V - Body Diode Forward Voltage(V) -Is - Reverse Drain Current(A) 0.001 0.01 0.1 0.4 SD 0.2 0.6 25° C V = 0V 100 A GS 1.00.8 1.2 -55° C 1.4

7 Oct-01-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P5806NVG SOP-8 Lead-Free NIKO-SEM

8 Oct-01-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P5806NVG SOP-8 Lead-Free NIKO-SEM SOIC-8(D) MECHANICAL DATA mm mm Dimension Min. Typ. Max. Dimension Min. Typ. Max. C 5.8 6.0 6.2 J 0.22 D 0.38 0.445 0.51 K 0° 4° 8° E 1.27 L F 1.35 1.55 1.75 M G 0.1 0.175 0.25 N H CB A D E F G I J K