P5506HVG ETC2

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Technical content

1 AUG-19-2004

Dual N-Channel Enhancement Mode Field Effect Transistor P5506HVG SOP-8 Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (T C = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±20 V TC = 25 °C 4.5 Continuous Drain Current TC = 70 °C ID Pulsed Drain Current1 I DM 20 A TC = 25 °C 2 Power Dissipation TC = 70 °C PD 1.3 W Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RθJA 62.5 °C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (T C = 25 °C, Unless Otherwise Noted) LIMITS UNIT PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250µA 60 Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250µA 1.0 1.5 2.5 V Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±100 nA VDS = 48V, VGS = 0V 1 Zero Gate Voltage Drain Current I DSS VDS = 40V, VGS = 0V, TJ = 55 °C 10 µA G : GATE D : DRAIN S : SOURCE PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 60 55mƸ 4.5A

2 AUG-19-2004

Dual N-Channel Enhancement Mode Field Effect Transistor P5506HVG SOP-8 Lead-Free NIKO-SEM On-State Drain Current1 I D(ON) VDS = 5V, VGS = 10V 20 A VGS = 4.5V, ID = 4A 55 75Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 4.5A 42 55 mƸ Forward Transconductance1 g fs V DS = 10V, ID = 4.5A 14 S DYNAMIC Input Capacitance C iss 650 Output Capacitance C oss 80 Reverse Transfer Capacitance C rss VGS = 0V, VDS = 25V, f = 1MHz pF Total Gate Charge2 Q g 12.5 18 Gate-Source Charge2 Q gs 2.4 Gate-Drain Charge2 Q gd VDS = 0.5V(BR)DSS, VGS = 10V, ID = 4.5A 2.6 nC Turn-On Delay Time2 t d(on) 11 20 Rise Time2 t r 8 18 Turn-Off Delay Time2 t d(off) 19 35 Fall Time2 t f VDD = 30V ID ≅ 1A, VGS = 10V, RGEN = 6Ƹ 6 15 nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current I S 1.3 Pulsed Current3 I SM 2.6 A Forward Voltage1 V SD I F = IS A, VGS = 0V 1 V 1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P5506HVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.

3 AUG-19-2004

Dual N-Channel Enhancement Mode Field Effect Transistor P5506HVG SOP-8 Lead-Free NIKO-SEM Body Diode Forward Voltage Variation with Source Current and Temperature 25° C T = 125° C 0.6 0.1 Is - Reverse Drain Current(A) 0.0001 0.001 0.01 SD 0.2 0.4 V = 0V 100 A GS 0.8 1.0 -55° C 1.2 V - Body Diode Forward Voltage(V)

4 AUG-19-2004

Dual N-Channel Enhancement Mode Field Effect Transistor P5506HVG SOP-8 Lead-Free NIKO-SEM

5 AUG-19-2004

Dual N-Channel Enhancement Mode Field Effect Transistor P5506HVG SOP-8 Lead-Free NIKO-SEM SOIC-8(D) MECHANICAL DATA mm mm Dimension Min. Typ. Max. Dimension Min. Typ. Max. C 5.8 6.0 6.2 J 0.22 D 0.38 0.445 0.51 K 0 ° 4 ° 8 ° E 1.27 L F 1.35 1.55 1.75 M G 0.1 0.175 0.25 N H CB A D E F G I J K