P4SMA_V02 VISHAY
Document overview
- Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
- PDF pages: 6
Technical content
www.vishay.com Vishay General Semiconductor Revision: 11-Jul-17 1 Document Number: 88367 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount TRANSZORB® Transient Voltage Suppressors DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use CA suffix (e.g. P4SMA10CA). Electrical characteristics apply in both directions.
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated chip junction
- Available in uni-directional and bi-directional
- 400 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % (300 W above 91 V)
- Excellent clamping capability
- Very fast response time
- Low incremental surge resistance
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified available - Automotive ordering code: P/NHE3 or P/NHM3
- Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified for 250 V to 540 V type) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: for uni-directional types the band denotes cathode end, no marking on bi-directional types Notes (1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2. Rating is 300 W above 91 V (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal PRIMARY CHARACTERISTICS VWM (uni-directional) 5.8 V to 459 V VWM (bi-directional) 5.8 V to 185 V VBR (uni-directional) 6.8 V to 540 V VBR (bi-directional) 6.8 V to 220 V PPPM 400 W, 300 W PD 3.3 W IFSM (uni-directional only) 40 A TJ max. 150 °C Polarity Uni-directional, bi-directional Package SMA (DO-214AC) SMA (DO-214AC) Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1) P PPM 400 W Peak pulse current with a 10/1000 μs waveform (1) (fig. 3) I PPM See next table A Power dissipation on infinite heatsink at TA = 50 °C P D 3.3 W Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) IFSM 40 A Operating junction and storage temperature range T J, TSTG -65 to +150 °C
www.vishay.com Vishay General Semiconductor Revision: 11-Jul-17 2 Document Number: 88367 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: tp ≤ 50 ms (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE CA62.35 (4) For bi-directional types with VR of 10 V and less, the ID limit is doubled (5) VF = 3.5 V at IF = 25 A (uni-directional only) ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PART NUMBER DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (1) (V) TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (4) (μA) MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) MAXIMUM TEMPERATURE COEFFICIENT OF VBR (%/°C)UNI BI MIN. MAX. P4SMA120A 120A 120C 114 126 1.0 102 1.0 1.8 165 0.107 P4SMA130A 130A 130C 124 137 1.0 111 1.0 1.7 179 0.107 P4SMA150A 150A 150C 143 158 1.0 128 1.0 1.4 207 0.106 P4SMA160A 160A 160C 152 168 1.0 136 1.0 1.4 219 0.108 P4SMA170A 170A 170C 162 179 1.0 145 1.0 1.3 234 0.108 P4SMA180A 180A 180C 171 189 1.0 154 1.0 1.2 246 0.108 P4SMA200A 200A 200C 190 210 1.0 171 1.0 1.1 274 0.108 P4SMA220A 220A 220C 209 231 1.0 185 1.0 0.9 328 0.108 P4SMA250A 250A - 237 263 1.0 214 1.0 0.87 344 0.110 P4SMA300A 300A - 285 315 1.0 256 1.0 0.73 414 0.110 P4SMA350A 350A - 333 368 1.0 300 1.0 0.62 482 0.110 P4SMA400A 400A - 380 420 1.0 342 1.0 0.55 548 0.110 P4SMA440A 440A - 418 462 1.0 376 1.0 0.50 602 0.110 P4SMA480A 480A - 456 504 1.0 408 1.0 0.46 658 0.110 P4SMA510A 510A - 485 535 1.0 434 1.0 0.43 698 0.110 P4SMA540A 540A - 513 567 1.0 459 1.0 0.41 740 0.110
www.vishay.com Vishay General Semiconductor Revision: 11-Jul-17 3 Document Number: 88367 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Mounted on minimum recommended pad layout Notes (1) AEC-Q101 qualified (2) _A is only available for 250 V to 540 V type RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Peak Pulse Power Rating Curve Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to ambient air (1) RθJA 120 °C/ WTypical thermal resistance, junction to lead R θJL 30 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) VOLTAGE RANGE (V) PACKAGE CODE BASE QUANTITY DELIVERY MODE UNI - BI - P4SMA6.8A-E3/61 0.064 6.8 to 540 6.8 to 220 61 1800 7" diameter plastic tape and reel P4SMA6.8A-E3/5A 0.064 6.8 to 540 6.8 to 220 5A 7500 13" diameter plastic tape and reel P4SMA6.8AHE3/61 (1) 0.064 6.8 to 220 6.8 to 220 61 1800 7" diameter plastic tape and reel P4SMA6.8AHE3/5A (1) 0.064 6.8 to 220 6.8 to 220 5A 7500 13" diameter plastic tape and reel P4SMA250AHE3_A/H (1)(2) 0.064 250 to 540 - H 1800 7" diamet er plastic tape and reel P4SMA250AHE3_A/I (1)(2) 0.064 250 to 540 - I 7500 13" diameter plastic tape and reel P4SMA6.8A-M3/61 0.064 6.8 to 540 6.8 to 220 61 1800 7" diameter plastic tape and reel P4SMA6.8A-M3/5A 0.064 6.8 to 540 6.8 to 220 5A 7500 13" diameter plastic tape and reel P4SMA6.8AHM3/H (1) 0.064 6.8 to 220 6.8 to 220 H 1800 7" diameter plastic tape and reel P4SMA6.8AHM3/I (1) 0.064 6.8 to 220 6.8 to 220 I 7500 13" diameter plastic tape and reel P4SMA250AHM3_A/H (1)(2) 0.064 250 to 540 - H 1800 7" diamet er plastic tape and reel P4SMA250AHM3_A/I (1)(2) 0.064 250 to 540 - I 7500 13" diameter plastic tape and reel 0.1 100 P4SMA6.8A - P4SMA91AP4SMA100A - P4SMA540A Copper Pad Areas Non-Repetitive Pulse Waveform shown in Fig. 3 T A = 25 °C P PP M - Peak Puls e Power (kW) td - Pulse Width (s) 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms 0 25 50 75 100 100 125 150 175 200 TJ - Initial Temperature (°C) Peak Pulse Power (P PP ) or Current (I PP Derating in Percentage, %
www.vishay.com Vishay General Semiconductor Revision: 11-Jul-17 4 Document Number: 88367 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 3 - Pulse Waveform Fig. 4 - Typical Junction Capacitance Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional Use Only 100 150 td 0 1.0 2.0 3.0 4.0 tr = 10 µs Peak Value I PPM Half Value - I PPM IPP 10/1000 µs Waveform as defined by R.E.A. IPPM - Peak Pulse Current, % I RSM t - Time (ms) TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of I PPM 100 1000 10 000 101 100 200 Uni-Directional Bi-Directional C J - Junction Capacitance (pF) VBR - Breakdown Voltage (V) TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p Measured at Stand-Off Voltage V WM 100 1000 0.001 0.01 0.1 100 1 10 1000 tp - Pulse Duration (s) Transient Thermal Impedance (°C/W) 1051 50 100 100 200 Number of Cycles at 60 Hz Peak Forward Surge Current (A) TJ = TJ max. 8.3 ms Single Half Sine-Wave
www.vishay.com Vishay General Semiconductor Revision: 11-Jul-17 5 Document Number: 88367 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) Cathode Band 0 (0) SMA (DO-214AC) Mounting Pad Layout 0.074 (1.88) MAX. 0.208 (5.28) REF. 0.066 (1.68) MIN. 0.060 (1.52) MIN. 0.030 (0.76) 0.060 (1.52)
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