P48N02LD ETC1

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

N-Channel Logic Level Enhancement Mode Field Effect Transistor P48N02LD TO-252 (D PAK) NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±20 V TC = 25 °C Continuous Drain Current TC = 100 °C ID Pulsed Drain Current1 IDM 156 Avalanche Current IAR A Avalanche Energy L = 0.1mH EAS 250 Repetitive Avalanche Energy2 L = 0.05mH EAR 8.6 mJ TC = 25 °C Power Dissipation TC = 100 °C PD W Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 Lead Temperature (1/16” from case for 10 sec.) TL 275 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RθJC 2.5 Junction-to-Ambient RθJA Case-to-Heatsink RθCS 0.7 °C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1％ ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.6 V Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA VDS = 20V, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V, TC = 125 °C 250 µA 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14mΩ 52A G D S

N-Channel Logic Level Enhancement Mode Field Effect Transistor P48N02LD TO-252 (D PAK) NIKO-SEM On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V A VGS = 4.5V, ID = 21A Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 26A mΩ Forward Transconductance1 gfs VDS = 10V, ID = 26A S DYNAMIC Input Capacitance Ciss 1200 1800 Output Capacitance Coss 600 1000 Reverse Transfer Capacitance Crss VGS = 0V, VDS = 15V, f = 1MHz 350 500 pF Total Gate Charge2 Qg Gate-Source Charge2 Qgs Gate-Drain Charge2 Qgd VDS = 10V, VGS = 10V, ID = 52A nC Turn-On Delay Time2 td(on) Rise Time2 tr VDS = 15V, RL = 1Ω 120 250 Turn-Off Delay Time2 td(off) ID ≅ 52A, VGS = 10V, RGEN = 24Ω Fall Time2 tf 105 200 nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS Pulsed Current3 ISM 156 A Forward Voltage1 VSD IS = 26A, VGS = 0V 0.9 1.3 V Reverse Recovery Time trr nS Peak Reverse Recovery Current IRM(REC) IF = IS, dlF/dt = 100A / µS 200 A Reverse Recovery Charge Qrr 0.043 µC 1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P48N02LD”, DATE CODE or LOT #

N-Channel Logic Level Enhancement Mode Field Effect Transistor P48N02LD TO-252 (D PAK) NIKO-SEM TO-252 (DPAK) MECHANICAL DATA mm mm Dimension Min. Typ. Max. Dimension Min. Typ. Max. A 9.35 10.1 H 0.8 B 2.2 2.4 I 6.4 6.6 C 0.48 0.6 J 5.2 5.4 D 0.89 1.5 K 0.6 E 0.45 0.6 L 0.64 0.9 F 0.03 0.23 M 4.4 4.6 G 6.2 N