P2SMA130A VISHAY

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Document Number: 89376 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 20-Apr-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount TRANSZORB® Transient Voltage Suppressors P2SMA130A thru P2SMA220A Vishay General Semiconductor New Product TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication.

FEATURES

  • Low profile package
  • Ideal for automated placement
  • Glass passivated chip junction
  • Available in uni-direct ional 200 W peak pulse power capability with a 10/1000 μs waveform
  • Excellent clamping capability
  • Very fast response time
  • Low incremental surge resistance
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
  • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end Notes (1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2 (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal PRIMARY CHARACTERISTICS VBR 130 V to 220 V PPPM 200 W PD 0.5 W TJ max. 150 °C DO-214AC (SMA) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) P PPM (1)(2) 200 W Peak pulse current with a 10/1000 μs waveform (fig. 3) I PPM (1) See next table A Power dissipation at TA = 25 °C (fig. 6) P D 0.5 W Operating junction and storage temperature range T J, TSTG - 55 to + 150 °C

www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 89376 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 20-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P2SMA130A thru P2SMA220A Vishay General Semiconductor New Product Notes (1) Pulse test: tp  50 ms (2) Surge current waveform per fig. 3 and derate per fig. 2 Note (1) Mounted on minimum recommended pad layout RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Peak Pulse Power Rating Curve Fig. 2 - Pulse Derating Curve ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (1) (V) TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) (1) MAXIMUM PEAK PULSE SURGE CURRENT IPPM (A) (2) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) MAXIMUM TEMPERATURE OF VBR (%/°C) MIN. MAX. P2SMA130A 2VK 124 137 1.0 111 1.0 1.11 179 0.140 P2SMA140A 2VL 133 147 1.0 119 1.0 1.04 192 0.140 P2SMA150A 2VM 143 158 1.0 128 1.0 0.97 207 0.140 P2SMA170A 2VN 162 179 1.0 145 1.0 0.85 234 0.150 P2SMA180A 2VP 171 189 1.0 154 1.0 0.81 246 0.150 P2SMA200A 2VQ 190 210 1.0 171 1.0 0.73 274 0.150 P2SMA220A 2VR 209 231 1.0 185 1.0 0.61 328 0.150 THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Thermal resistance, junction to ambient air R JA (1) 250 °C/W Thermal resistance, junction to mount R JM (1) 50 °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE P2SMA130A-M3/61T 0.064 61T 1800 7" di ameter plastic tape and reel P2SMA130A-M3/5AT 0.064 5AT 7500 13" di ameter plastic tape and reel 0.01 100 P PPM - Peak Pul se Power (kW) td - Pulse Width (μs) 0.1 1 10 100 1000 10 000 0.2" x 0.2" (5.0 mm x 5.0 mm) off Voltage, VWM Copper Pad Areas 0.1 0 2 55 07 5 1 0 0 100 125 150 175 TJ - Initial Temperature (°C) Peak Pul se Power (P PP ) or Current (I PP Derating in Percentage, %

Document Number: 89376 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 20-Apr-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P2SMA130A thru P2SMA220A Vishay General Semiconductor New Product Fig. 3 - Pulse Waveform Fig. 4 - Typical Junction Capacitance Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Power Derating Curve PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0 1.0 2.0 3.0 4.0 100 150 td t - Time (ms) IPPM - Peak Pul se Current, % I RSM tr = 10 μs Peak Value I PPM Half Value - I PPM IPP TJ = 25 °C Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50 % of IPPM tr = 8 μs td = 1000 μs td = 20 μs 100 120 200 C J - Junction Capacitance (pF) VWM - Reverse Stand-Off Voltage (V) Measured at Stand-off Voltage VWM TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p 210200190180170160150140130 Measured at Zero Bias 100 1000 0.01 0.1 1 10 100 1000 tp - Pulse Duration (s) Tran sient Thermal Impedance (°C/W) 0 175 0.6 TA - Ambient Temperature (°C) P M(av) Steady State Power Di ss ipation (W) 0.5 0.4 0.3 0.2 0.1 150125100755025 FR-4 Board, on Minimum Recommended Pad Layout 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) Cathode Band 0 (0) DO-214AC (SMA) Mounting Pad Layout 0.074 (1.88) MAX. 0.208 (5.28) REF. 0.066 (1.68) MIN. 0.060 (1.52) MIN. 0.030 (0.76) 0.060 (1.52)

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