P2804NVG ETC2

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Technical content

1 AUG-19-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (T C = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage V DS 40 -40 V Gate-Source Voltage V GS ±20 ±20 V TC = 25 °C 7 -6 Continuous Drain Current TC = 70 °C ID 6 -5 Pulsed Drain Current1 I DM 20 -20 A TC = 25 °C 2 Power Dissipation TC = 70 °C PD 1.3 W Junction & Storage Temperature Range T j, Tstg -55 to 150 Lead Temperature (1/16” from case for 10 sec.) T L 275 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RθJA 62.5 °C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (T C = 25 °C, Unless Otherwise Noted) LIMITS UNIT PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX STATIC VGS = 0V, ID = 250µA Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = -250µA N-Ch P-Ch -40 VDS = VGS, ID = 250µA Gate Threshold Voltage V GS(th) VDS = VGS, ID = -250µA N-Ch P-Ch 1.0 -1.0 1.5 -1.5 2.5 -2.5 V G : GATE D : DRAIN S : SOURCE PRODUCT SUMMARY V (BR)DSS R DS(ON) I D N-Channel 40 28mƸ 7A P-Channel -40 65mƸ -5A

2 AUG-19-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free NIKO-SEM VDS = 0V, VGS = ±20V Gate-Body Leakage I GSS VDS = 0V, VGS = ±20V N-Ch P-Ch ±100 ±100 nA VDS = 32V, VGS = 0V VDS = -32V, VGS = 0V N-Ch P-Ch VDS = 30V, VGS = 0V, TJ = 55 °CZero Gate Voltage Drain Current I DSS VDS = -30V, VGS = 0V, TJ = 55 °C N-Ch P-Ch -10 µA VDS = 5V, VGS = 10V On-State Drain Current1 I D(ON) VDS =-5V, VGS = -10V N-Ch P-Ch -20 A VGS = 4.5V, ID = 6A VGS = -4.5V, ID = -4A N-Ch P-Ch 105 VGS = 10V, ID = 7A Drain-Source On-State Resistance1 RDS(ON) VGS = -10V, ID = -5A N-Ch P-Ch mƸ VDS = 10V, ID = 7A Forward Transconductance1 g fs VDS = -10V, ID = -5A N-Ch P-Ch S DYNAMIC Input Capacitance C iss N-Ch P-Ch 790 690 Output Capacitance C oss N-Ch P-Ch 175 310 Reverse Transfer Capacitance C rss N-Channel VGS = 0V, VDS = 10V, f = 1MHz P-Channel VGS = 0V, VDS = -10V, f = 1MHz N-Ch P-Ch pF Total Gate Charge2 Q g N-Ch P-Ch Gate-Source Charge2 Q gs N-Ch P-Ch 2.5 2.2 Gate-Drain Charge2 Q gd N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, ID = 7A P-Channel VDS = 0.5V(BR)DSS, VGS = -10V, ID = -5A N-Ch P-Ch 2.1 1.9 nC

3 AUG-19-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free NIKO-SEM Turn-On Delay Time2 t d(on) N-Ch P-Ch 2.2 6.7 4.4 13.4 Rise Time2 t r N-Ch P-Ch 7.5 9.7 19.4 Turn-Off Delay Time2 t d(off) N-Ch P-Ch 11.8 19.8 21.3 35.6 Fall Time2 t f N-Channel VDS = 20V ID ≅ 1A, VGS = 10V, RGEN = 6Ƹ P-Channel VDS = -20V, RL = 1Ƹ ID ≅ -1A, VGS = -10V, RGEN = 6Ƹ N-Ch P-Ch 3.7 12.3 7.4 22.2 nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current I S N-Ch P-Ch 1.3 -1.3 Pulsed Current3 I SM N-Ch P-Ch 2.6 -2.6 A IF = IS, VGS = 0V Forward Voltage1 V SD IF = IS, VGS = 0V N-Ch P-Ch V 1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P2804NVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.

4 AUG-19-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free NIKO-SEM TYPICAL PERFORMANCE CHARACTERISTICS N-CHANNEL Body Diode Forward Voltage Variation with Source Current and Temperature 25° C T = 125° C V - Body Diode Forward Voltage(V) Is - Reverse Drain Current(A) 0.001 0.01 0.1 0.4 SD 0.2 0.6 V = 0V 100 A GS 1.00.8 1.2 -55° C 1.4

5 AUG-19-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free NIKO-SEM

6 AUG-19-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free NIKO-SEM P-CHANNEL 25° C -V - Body Diode Forward Voltage(V) -Is - Reverse Drain Current(A) 0.001 0.01 0.1 0.4 SD 0.2 0.6 V = 0V 100 GS AT = 125° C 1.00.8 1.2 -55° C 1.4

7 AUG-19-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free NIKO-SEM

8 AUG-19-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free NIKO-SEM SOIC-8(D) MECHANICAL DATA mm mm Dimension Min. Typ. Max. Dimension Min. Typ. Max. C 5.8 6.0 6.2 J 0.22 D 0.38 0.445 0.51 K 0 ° 4 ° 8 ° E 1.27 L F 1.35 1.55 1.75 M G 0.1 0.175 0.25 N H CB A D E F G I J K