P2504BDG ETC1

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Technical content

1 JAN-17-2005

N-Channel Logic Level Enhancement Mode Field Effect Transistor ( Preliminary ) P2504BDG TO-252 (DPAK) Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V TC = 25 °C 12 Continuous Drain Current TC = 100 °C ID Pulsed Drain Current1 IDM 45 A TC = 25 °C 41 Power Dissipation TC = 100 °C PD W Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 Lead Temperature (1/16” from case for 10 sec.) TL 275 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case Rθ Jc 3 °C / W Junction-to-Ambient Rθ JA 75 °C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1％ ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 2.0 3.0 V Gate-Body Leakage IGSS VDS = 0V, V GS = ±20V ±250 nA VDS = 32V, V GS = 0V 1 Zero Gate Voltage Drain Current IDSS VDS = 30V, V GS = 0V, TC = 125 °C 10 µA On-State Drain Current1 ID(ON) VDS = 10V, V GS = 10V 45 A VGS = 4.5V, ID = 10A 35 45 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 12A 21 25 mΩ 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 25mΩ 12A G D S

2 JAN-17-2005

N-Channel Logic Level Enhancement Mode Field Effect Transistor ( Preliminary ) P2504BDG TO-252 (DPAK) Lead-Free NIKO-SEM Forward Transconductance1 gfs VDS = 10V, ID = 12A 18 S DYNAMIC Input Capacitance Ciss 760 Output Capacitance Coss 165 Reverse Transfer Capacitance Crss VGS = 0V, V DS = 10V, f = 1MHz pF Total Gate Charge2 Qg 16 Gate-Source Charge2 Qgs 2.5 Gate-Drain Charge2 Qgd VDS = 0.5V(BR)DSS, VGS = 10V, ID = 12A 2.1 nC Turn-On Delay Time2 td(on) 2.1 4.2 Rise Time2 tr VDS = 20V, RL = 1Ω 7.2 14 Turn-Off Delay Time2 td(off) ID ≅ 1A, VGS = 10V, RGEN = 6Ω 11.6 21.0 Fall Time2 tf 3.5 7.2 nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 12 Pulsed Current3 ISM 40 A Forward Voltage1 VSD IS = IS, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 5 A, dlF/dt = 100A / µS 14.5 nS Reverse Recovery Charge Qrr 7.2 nC 1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P2504BDG”, DATE CODE or LOT # Orders for parts with Lead -Free plating can be placed using the PXXXXXXG parts name.

3 JAN-17-2005

N-Channel Logic Level Enhancement Mode Field Effect Transistor ( Preliminary ) P2504BDG TO-252 (DPAK) Lead-Free NIKO-SEM Body Diode Forward Voltage Variation with Source Current and Temperature 25°C T = 125°C V - Body Diode Forward Voltage(V) Is - Reverse Drain Current(A) 0.001 0.01 0.1 0.4 SD 0.2 0.6 V = 0V 100 A GS 1.00.8 1.2 -55°C 1.4

4 JAN-17-2005

N-Channel Logic Level Enhancement Mode Field Effect Transistor ( Preliminary ) P2504BDG TO-252 (DPAK) Lead-Free NIKO-SEM

5 JAN-17-2005

N-Channel Logic Level Enhancement Mode Field Effect Transistor ( Preliminary ) P2504BDG TO-252 (DPAK) Lead-Free NIKO-SEM TO-252 (DPAK) MECHANICAL DATA mm mm Dimension Min. Typ. Max. Dimension Min. Typ. Max. A 9.35 10.1 H 0.8 B 2.2 2.4 I 6.4 6.6 C 0.48 0.6 J 5.2 5.4 D 0.89 1.5 K 0.6 1 E 0.45 0.6 L 0.64 0.9 F 0.03 0.23 M 4.4 4.6 G 6 6.2 N G A H J I B C XXXXXXXXX M L K D E F NIKOS