P2503BDG ETC1

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Technical content

1 SEP-30-2004

N-Channel Logic Level Enhancement Mode Field Effect Transistor P2503BDG TO-252 Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V TC = 25 °C 12 Continuous Drain Current TC = 70 °C ID Pulsed Drain Current1 I DM 30 A TC = 25 °C 32 Power Dissipation TC = 70 °C PD W Junction & Storage Temperature Range T j, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RθJc 3 °C / W Junction-to-Ambient R θJA 75 °C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (T C = 25 °C, Unless Otherwise Noted) LIMITS UNIT PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250µA 30 Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250µA 1 1.5 2.5 V Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±250 nA VDS = 24V, VGS = 0V 1 Zero Gate Voltage Drain Current I DSS VDS = 20V, VGS = 0V, TJ = 55 °C 10 µA PRODUCT SUMMARY V(BR)DSS R DS(ON) I D 30 25mƸ 12A G D S 1.GATE 2.DRAIN 3.SOURCE

2 SEP-30-2004

N-Channel Logic Level Enhancement Mode Field Effect Transistor P2503BDG TO-252 Lead-Free NIKO-SEM On-State Drain Current1 I D(ON) V DS = 5V, VGS = 10V 30 A VGS = 4.5V, ID = 6A 25 37 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 12A 18 25 mƸ Forward Transconductance1 g fs V DS = 5V, ID = 12A 19 S DYNAMIC Input Capacitance C iss 790 Output Capacitance C oss 175 Reverse Transfer Capacitance C rss VGS = 0V, VDS = 10V, f = 1MHz pF Total Gate Charge2 Q g 16 Gate-Source Charge2 Q gs 2.5 Gate-Drain Charge2 Q gd VDS = 0.5V(BR)DSS, VGS = 10V, ID = 12A 2.1 nC Turn-On Delay Time2 t d(on) 2.2 4.4 Rise Time2 t r 7.5 15 Turn-Off Delay Time2 t d(off) 11.8 21.3 Fall Time2 t f VDD = 10V ID ≅ 1A, VGS = 10V, RGEN = 6Ƹ 3.7 7.4 nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current I S 1.3 Pulsed Current3 I SM 2.6 A Forward Voltage1 V SD I F = 1A, VGS = 0V 1 V 1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P2503BDG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.

3 SEP-30-2004

N-Channel Logic Level Enhancement Mode Field Effect Transistor P2503BDG TO-252 Lead-Free NIKO-SEM TYPICAL PERFORMANCE CHARACTERISTICS Body Diode Forward Voltage Variation with Source Current and Temperature 25° C T = 125° C V - Body Diode Forward Voltage(V) Is - Reverse Drain Current(A) 0.001 0.01 0.1 0.4 SD 0.2 0.6 V = 0V 100 A GS 1.00.8 1.2 -55° C 1.4

4 SEP-30-2004

N-Channel Logic Level Enhancement Mode Field Effect Transistor P2503BDG TO-252 Lead-Free NIKO-SEM

5 SEP-30-2004

N-Channel Logic Level Enhancement Mode Field Effect Transistor P2503BDG TO-252 Lead-Free NIKO-SEM TO-252 (DPAK) MECHANICAL DATA mm mm Dimension Min. Typ. Max. Dimension Min. Typ. Max. A 9.35 10.4 H 0.89 2.03 B 2.2 2.4 I 6.35 6.80 C 0.45 0.6 J 5.2 5.5 D 0.89 1.5 K 0.6 1 E 0.45 0.69 L 0.5 0.9 G 5.2 6.2 N G A H J I B C M L K D E F 13 2