P2103NVG ETC2

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Technical content

1 MAY-21-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P2103NVG SOP-8 Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (T C = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMB OL N-Channel P-Channel UNITS Drain-Source Voltage V DS 30 -30 V Gate-Source Voltage V GS ±20 ±20 V TC = 25 °C 7 -6 Continuous Drain Current TC = 70 °C ID 6 -5 Pulsed Drain Current1 I DM 28 -24 A TC = 25 °C 2 Power Dissipation TC = 70 °C PD 1.3 W Junction & Storage Temperature Range T j, Tstg -55 to 150 Lead Temperature (1/16” from case for 10 sec.) T L 275 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RθJA 62.5 °C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (T C = 25 °C, Unless Otherwise Noted) LIMITS UNIT PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX STATIC VGS = 0V, ID = 250µA Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = -250µA N-Ch P-Ch -30 VDS = VGS, ID = 250µA Gate Threshold Voltage V GS(th) VDS = VGS, ID = -250µA N-Ch P-Ch 0.8 -0.8 1.5 -1.5 2.5 -2.5 V G : GATE D : DRAIN S : SOURCE PRODUCT SUMMARY V (BR)DSS R DS(ON) I D N-Channel 30 21mΩ 7A P-Channel -30 35mΩ -6A

2 MAY-21-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P2103NVG SOP-8 Lead-Free NIKO-SEM VDS = 0V, VGS = ±20V Gate-Body Leakage I GSS VDS = 0V, VGS = ±20V N-Ch P-Ch ±100 ±100 nA VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V N-Ch P-Ch VDS = 20V, VGS = 0V, TJ = 55 °CZero Gate Voltage Drain Current I DSS VDS = -20V, VGS = 0V, TJ = 55 °C N-Ch P-Ch -10 µA VDS = 5V, VGS = 10V On-State Drain Current1 I D(ON) VDS =-5V, VGS = -10V N-Ch P-Ch -24 A VGS = 4.5V, ID = 6A VGS = -4.5V, ID = -5A N-Ch P-Ch VGS = 10V, ID = 7A Drain-Source On-State Resistance1 RDS(ON) VGS = -10V, ID = -6A N-Ch P-Ch mΩ VDS = 10V, ID = 5A Forward Transconductance1 g fs VDS = -10V, ID = -5A N-Ch P-Ch S DYNAMIC Input Capacitance C iss N-Ch P-Ch 1700 970 Output Capacitance C oss N-Ch P-Ch 380 370 Reverse Transfer Capacitance C rss N-Channel VGS = 0V, VDS = 10V, f = 1MHz P-Channel VGS = 0V, VDS = -10V, f = 1MHz N-Ch P-Ch 260 180 pF Total Gate Charge2 Q g N-Ch P-Ch Gate-Source Charge2 Q gs N-Ch P-Ch Gate-Drain Charge2 Q gd N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, ID = 6A P-Channel VDS = 0.5V(BR)DSS, VGS = -10V, ID = -5A N-Ch P-Ch nC

3 MAY-21-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P2103NVG SOP-8 Lead-Free NIKO-SEM Turn-On Delay Time2 t d(on) N-Ch P-Ch Rise Time2 t r N-Ch P-Ch Turn-Off Delay Time2 t d(off) N-Ch P-Ch 120 160 Fall Time2 t f N-Channel VDS = 15V ID ≅ 1A, VGS = 10V, RGEN = 6Ω P-Channel VDS = -15V, RL = 1Ω ID ≅ -1A, VGS = -10V, RGEN = 6Ω N-Ch P-Ch nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current I S N-Ch P-Ch Pulsed Current3 I SM N-Ch P-Ch A IF = 1A, VGS = 0V Forward Voltage1 V SD IF = -1A, VGS = 0V N-Ch P-Ch V IF = 5A, dlF/dt = 100A / µS Reverse Recovery Time t rr IF = -5A, dlF/dt = 100A / µS N-Ch P-Ch 15.5 15.5 nS Reverse Recovery Charge Q rr N-Ch P-Ch 7.9 7.9 nC 1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P2103NVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.

4 MAY-21-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P2103NVG SOP-8 Lead-Free NIKO-SEM N-CHANNEL

5 MAY-21-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P2103NVG SOP-8 Lead-Free NIKO-SEM

6 MAY-21-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P2103NVG SOP-8 Lead-Free NIKO-SEM P-CHANNEL

7 MAY-21-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P2103NVG SOP-8 Lead-Free NIKO-SEM

8 MAY-21-2004

N- & P-Channel Enhancement Mode Field Effect Transistor P2103NVG SOP-8 Lead-Free NIKO-SEM SOIC-8 (D) MECHANICAL DATA mm mm Dimension Min. Typ. Max. Dimension Min. Typ. Max. C 5.8 6.0 6.2 J 0.22 D 0.38 0.445 0.51 K 0 ° 4 ° 8 ° E 1.27 L F 1.35 1.55 1.75 M G 0.1 0.175 0.25 N