NPT1012 ETC2

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

NDS-025 Rev. 3, April 2013 NPT1012 Page 1

FEATURES

  • Optimized for broadband operation from DC-4000MHz
  • 25W P3dB CW power at 3000MHz
  • 16-20W P3dB CW power from 1000-2500MHz in application board with >45% drain efficiency
  • 10-20W P3dB CW power from 30-1000MHz in ap- plication board with >50% drain efficiency
  • High efficiency from 14 - 28V
  • 4.0 °C/W R TH with maximum TJ rating of 200 °C
  • Robust up to 10:1 VSWR mismatch at all angles with no device damage at 90 °C flange
  • Subject to EAR99 export control DC – 4000 MHz

25 Watt, 28 Volt

Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology RF Specifications (CW, 3000MHz): VDS = 28V, IDQ = 225mA, TC = 25°C, Measured in Nitronex Test Fixture Symbol Parameter Min Typ Max Units P3dB Average Output Power at 3dB Gain Compression 43 44 - dBm P1dB Average Output Power at 1dB Gain Compression - 43 - dBm GSS Small Signal Gain 12 13 - dB h Drain Efficiency at 3dB Gain Compression 57 65 - % VSWR 10:1 VSWR at all phase angles No damage to the device Figure 1 - Typical CW Performance in Load-Pull, VDS = 28V, IDQ = 225mA Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability Figure 2 - Typical CW Performance1 in Load-Pull, VDS = 28V, IDQ = 225mA

NDS-025 Rev. 3, April 2013 NPT1012 Page 2 Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted Symbol Parameter Min Typ Max Units Off Characteristics VBDS Drain-Source Breakdown Voltage (VGS = -8V, ID = 8mA) 100 - - V IDLK Drain-Source Leakage Current GS = -8V, VDS = 60V) - - 4 mA On Characteristics VT Gate Threshold Voltage VGSQ Gate Quiescent Voltage RON On Resistance GS = 2V, ID = 60mA) - 0.44 0.55 W ID,MAX Drain Current (VDS = 7V pulsed, 300 ms pulse width, 0.2% duty cycle, VGS = 2.0V) - 5.4 - A Symbol Parameter Max Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage -10 to 3 V IG Gate Current 40 mA PT Total Device Power Dissipation (Derated above 25°C) 44 W TSTG Storage Temperature Range -65 to 150 °C TJ Operating Junction Temperature 200 °C HBM Human Body Model ESD Rating (per JESD22-A114) 1B (+/-500V) MM Machine Model ESD Rating (per JESD22-A115) A (>100V) CDM Charge Device Model ESD Rating (per JESD22-C101) IV (>1000V) DC Specifications: TC = 25°C Symbol Parameter Min Typ Max Units qJC Thermal Resistance (Junction-to-Case), T Thermal Resistance Specification

NDS-025 Rev. 3, April 2013 NPT1012 Page 3 Table 1: Optimum Source and Load Impedances 1 for CW Gain, Drain Efficiency, and Output Power Performance Load-Pull Data, Reference Plane at Device Leads VDS=28V, IDQ=225mA, TA=25°C unless otherwise noted Figure 3 - Optimum Impedances for CW Performance, VDS = 28V Frequency (MHz) VDS (V) ZS (W) ZL (W) PSAT (W) GSS (dB) Drain Efficiency @ PSAT (%) Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability ZS is the source impedance presented to the device. ZL is the load impedance presented to the device.

NDS-025 Rev. 3, April 2013 NPT1012 Page 7 Figure 18 - AC200B-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm]) Ordering Information 1 Part Number Description NPT1012B NPT1012 in AC200B-2 Metal-Ceramic Bolt-Down Package 1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com

NDS-025 Rev. 3, April 2013 NPT1012 Page 8 Nitronex, LLC

2305 Presidential Drive

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