NA82 ETC1
Document overview
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Technical content
NA82 is an 8-input NAND gate with 2x drive strength. Truth Table Q C D E F B G A H Capacitance ABCDEFGHQ Ci (pF) LXXXXXXXH A 0.035 XLXXXXXXH B 0.023 XXLXXXXXH C 0.020 XXXL XXXXH D 0.023 XXXX LXXXH E 0.032 XXXXXL XXH F 0.023 XXXXXX L XH G 0.021 XXXXXXX L H H 0.022 HHHHHHHH L Area Power 1.35 mils2 4.38 µW / MHz Delay [ns] = tpd.. = f(SL, L) with SL = Input Slope [ns] ; L = Output Load [pF] Output Slope [ns] = op_sl.. = f(L) with L = Output Load [pF] AC Characteristics : Tj = 25°C VDD = 3.3V Typical Process AC Characteristics Characteristics Symbol SL = 0.1 SL = 2.0 Sept. 1996 - 248 - Rev. N/C Austria Mikro S ysteme International R 0.6 µm CMOS CUB NA82 NA82
SL = 0.1 SL = 2.0 Sept. 1996 - 249 - Rev. N/C Austria Mikro S ysteme International R 0.6 µm CMOS CUB NA82