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NA1TR8 ETC2

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Transceiver (NA1TR8) Datasheet Version 2.09 NA-03-0111-0239-2.09

nanoNET TRX Transceiver (NA1TR8) Datasheet Page ii NA-03-0111-0239-2.09 © 2007 Nanotron Technologies GmbH. Document Information Document Title: nanoNET TRX Transceiver (NA1TR8) Datasheet Document Version: 2.09 Published (yyyy-mm-dd): 2007-12-20 Current Printing: 2007-12-20, 4:22 pm Document ID: NA-03-0111-0239-2.09 Document Status: Released Disclaimer Nanotron Technologies GmbH believes the information contained herein is correct and accurate at the time of release. Nanotron Technologies GmbH reserves the right to make changes without further notice to the product to improve reliability, function or design. Nanotron Technologies GmbH does not assume any liability or responsibility arising out of this product, as well as any application or circuits described herein, neither does it convey any license under its patent rights. As far as possible, significant changes to product specifications and functionality will be provided in product specific Errata sheets, or in new versions of this doc ument. Customers are encouraged to check the Nanotron website for the most recent updates on products. Trademarks nanoNET© is a registered trademark of Nanotron Technologies GmbH. All other trademarks, registered trademarks, and product names are the sole property of their respective owners. This document and the information contained herein is the subject of copyright and intellectual property rights under international convention. All rights reserved. No part of this document may be reproduced, stored in a retrieval system, or transmitted in an y form by any means, electronic, mechanical or optical, in whole or in part, without the prior written permission of Nanotron Technologies GmbH. Copyright © 2007 Nanotron Technologies GmbH. Life Support Policy These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Nanotron Te chnologies GmbH customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Nanotron Technologies GmbH for any damages resulting from such improper use or sale. Electromagnetic Interference / Compatibility Nearly every electronic device is suscept ible to electromagnetic interference (EMI) if inadequately shielded, designed, or othe r- wise configured for electromagnetic compatibility. To avoid electromagnetic interference and/or compatibility conflic ts, do not use this device in any facility where posted notic es instruct you to do so. In aircraft, use of any radio frequency devices must be in accordance with applicable regulations. Hospi tals or health care facilities may be using equipment that is sensitive to external RF energy. With medical devices, maintain a minimum separation of 15 cm (6 inches) between pacemakers and wireless devices and some wireless radios may interfere with some hearing aids. If other pe rsonal medical devices are being used in the vicinity of wirel ess devices, ensure that the device has been ad equately shielded from RF energy. In a domestic environment this product may cause radio interference in which case the user may be required to take adequate measures. CAUTION! Electrostatic Sensitive Device. Pr ecaution should be used when handling the device in order to pre- vent permanent damage.

nanoNET TRX Transceiver (NA1TR8) Datasheet © 2007 Nanotron Technologies GmbH. NA-03-0111-0239-2.09 Page 1 1C h i p S u m m a r y The nanoNET chip is a low-power, highly integrated mixed signal chip uti- lizing Nanotron’s unique wireless Chirp Spread Spectrum (CSS) communi- cation technology. This innovative modulation technique permits the development of chips that have extremely low power consumption, operate over a wide range of temperatures, and perform effortlessly in robust wireless networks operat- ing in the 2.45 GHz ISM band. This chip offers an ideal solution for battery powered applications that re- quire a reliable and extremely long operating lifetime, such as several years. For communication over the air, CSS uses Upchirps and Downchirps with a symbol duration of T symbol = 1 µs and an effective bandwidth of Bchirp = 64 MHz. A wide variety of systems and applications can be developed with this novel technology, with the additional advantage of being able to select from data rates of either 500 kbps, 1 Mbps, or 2 Mbps. Conveniently, only a minimal number of external components are required to build a fully operational bi-di- rectional communication node. Target Applications Industries that can benefit from nanoNET's robust, reliable communication include, but are not limited to: + Active RFID + Industrial Control and Monitoring + Home Automation + Meter and Sensor Reading Key Features1 + Provides a single chip solution for a 2.45 GHz ISM band RF transceiver voltage + Includes an integrated SPI (slave mode only) + Includes an integrated microcontroller man- agement function + Provides a maximum data rate of 2 Mbps + Provides a maximum range for LOS (without interferers) at 900 m outdoors and 60 m indoors (with optimal conditions) + Uses an effective chirp bandwidth of

64 MHz

+ Receiver sensitivity is -92 dBm @ 1 Mbps + Carrier to Interference is C/I = -3…0 dB @ C = -82 dBm + Processing gain is 17 dB + Current consumption is 35 mA (RX), 78 mA (TX) @ 8 dBm + Standby current with active RTC is 1.5 µA + Allows an operating temperature range of between -40° C to +85° C + Includes an integrated 4 channel digital I/O + Includes an integrated MAC controller + Provides a 32.768 kHz clock for microcontrol- lers + Includes a programmable clock output at digi- tal output 1. At nominal conditions, exc ept otherwise specified. (See Nominal Conditions on page 7.)

1.1 Quick Reference Data

Table 1: Quick reference data Parameter Value Unit Maximum supply voltage 3.6 V Minimum supply voltage 2.4 V Maximum output power 8 dBm Maximum data rate 2 Mbps Typical receiver sensitivity at nominal conditionsa a. See Nominal Conditions on page 7. -92 dBm Typical receiver sensitivity @ 2 Mbps -86 dBm Typical supply current In transmit mode @ -15 dBm output power & nominal conditionsa 58 mA In transmit mode @ -5 dBm output power & nominal conditionsa 64 mA In receive mode & nominal conditionsa 35 mA In standby mode with active RTCb b. Under nominal conditions. S ee Nominal Conditions on page 7. 1.5 µA Operating temperature range -40 to +85 oC Typical Operating Voltages Typical power supply voltage VDDA (analog block) 3 V Typical power supply voltage VDDD (digital block) 3 V Modulation method Chirp – Operating frequency range Minimum 2400 MHz Typical 2441.750 MHz Maximum 2483.5 MHz

1.2 Block Diagram – Simplified

Figure 1: nanoNET TRX (NA1TR8) block diagram - simplified Analog TX Xtal1B Xtal1A Xtal2A Xtal2B TxA RxB RxA IfOutP IfOutN IfInP1 IfInN1 IfInP2 IfInN2 RX Complementary Dispersive Delay Line DS1804C (CDDL) TxRx Digital TxB VDDA DilO1 DilO2 DilO3 DilO4 VSSD PowerUp Reset VDDD VDDCap µCVccExt µCReset µCIrq SpiClk SpiSsn SpiRxD SpiTxD VSSD VSSA AGCCap

1.3 Sample Application

The following application is an example of the nanoNET TRX Transceiver used with a tempera- ture measurement and control device. Figure 2: Example application showing recommended circuitry Note: A full description of the sample application and PCB layout is provided in Appendix 1: Sample Appli- cation on page 27. VDDA Xtal2B Xtal2A Xtal1A Xtal1B TxRx IfInN1 IfInP1 VSSA IfInP2 IfInN2 VDDA VSSA VSSA TxA TxB VSSA RxA RxB VSSA IfOutN IfOutP VDDD VSSD SpiTxD SpiClk SpiRxD DilO1 DilO2 DilO3 DilO4 VSSD VDDD VCC VDDA µCVccExt PowerUpReset AGCCap AFCCap Port A Port B Port C CDDL Microcontroller nanoNET TRX (NA1TR8)VSSD µCIrq µCReset SpiSsn VDDDCap VCC Actuator Temperature Shaded area is recommended circuitry VSSD 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 VCC VDDA Sensor Temperature Control Unit Note: Pin 20 (DilO4) 32.768 kHz clock operating after reset/power up. VDDA Bandpass Filter Balun 1804

2 General Description

The nanoNET IC is a extremely low power, highly integrated mixed signal chip utilizing Chirp Spread Spectrum (CSS), a novel wireless communication technology developed by Nanotron Technologies. Fully Integrated Chip The nanoNET chip is a fully integrated transceiver consisting of: + a complete analog receiver (from antenna input to the demodulated digital data output). + a complete transmitter (from digital data input to RF power amplifier output which can be directly connected to the antenna input) with additional support for an external power transistor. An external transistor or amplifier can boost trans- mission power from, for example, +8 dBm to +20 dBm (6.3 mW to 100 mW respectively). + a programmable digital controller communicat- ing with an external microcontroller via a serial peripheral interface (SPI). This controller incor- porates a baseband controller and a Medium Access Controller (MAC). The baseband con- troller performs the processing of data (framing, error correction, en/decryption, and so on) while the MAC controller applies CSMA/CA, TDMA or hybrid-access schemes for medium access. About Chirp Spread Spectrum Using CSS, this chip produces Upchirps and Downchirps with a symbol duration of T symbol = 1µs and an effective frequency bandwidth of Bchirp = 64 MHz. CSS enables the development of different systems where application software can select physical data rates of 500 kbps, 1 Mbps, or 2 Mbps. This IC is designed in such a way that only a mini- mum number of external elements are required to develop a fully operational bi-directional wireless communication node. Even very slow microcontrol- lers can work together with this high speed trans- ceiver, due to its use of FIFOs (First In, First Out). The nanoNET chip provides two buffers (a 1024 bit receive buffer and a 1024 bit transmit buffer) dedi- cated to storing the payload of either received pack- ets or ready to be transmitted data packets. These buffers can be accessed independently of each other – the receive buffer can receive data from the antenna while the transmit buffer can simulta- neously be filled with data for the next packet trans- mission. Programmable Digital Support Block A programmable support block is provided, which consists of a real time clock, wake up circuitry, power management, low battery voltage measure- ment, and several adjustment and calibration func- tions for the analog part of the transceiver. The digital IO pin number 4 (DilO4) on the chip pro- vides a 32.768 kHz clock for use by an external microcontroller on chip st artup. It can be switched off after power up if not needed or it can be pro- grammed to operate in another frequency (32.768 kHz or from 125 kHz to 16 MHz). Furthermore, the three other digital IO pins (DilO1, DilO2, DilO3) pro- vided by the chip can also be programmed to oper- ate in a frequency in the same range as DilO4. Moreover, all important functions of this block can be setup and controlled by an application software. A Receive Signal Strength Indicator (RSSI) is also provided, which can be supported and controlled by the application. This RSSI value is required when CSMA is implemented and can be used, for exam- ple, to indicate when the air interface is free or busy. The bit processing methods of the nanoNET chip include: + Scrambling + CRC (Cyclic Redundancy Check) generation and checking (CRC types include: ISO/ IEC3309, CCITT X.25, X.75, ETS 300 125 / IEC 60870-5-1 / CCITT-32) + 128 bit encryption/decry ption (stream cipher with support of one time pads) + FEC (forward error correction) block coded Scrambling, encryption/decryption, and FEC can be enabled by the application, while the CRC type is selectable. Transmission power can be programmed by the application and can be reduced in steps (from maxi- mum +8 dBm ) in a range of Gain ≥ 35 dB . This means that the transmission power can vary from - 27 dBm to +8 dBm without any additional external power amplifier or attenuator. Receiver Sensitivity The sensitivity of the nanoNET TRX Transceiver is defined by the raw data mode (data not coded or encrypted in anyway) where BER = 0.001. Sensitiv- ity is P sensitivity = -92 dBm or better. For an isotropic antenna, link budget is equal to Alink_budget = 100 dB. Upchirp Downchirp

3 Block Diagram

Figure 3: nanoNET TRX Transceiver block diagram (simplified) Analog TX LPF LPF POMD LPF LPF IQ POMD Xtal1B Xtal1A Xtal2A Xtal2B MHz 32.768 kHz TxA RxB RxA IfOutP IfOutN IfInP1 IfInN1 IfInP2 IfInN2 AGC RX Threshold RX Power Management RTC Wake Up Timer Microcontroller Management Microcontroller Interface FIFO Digital Bit Processing (CRC, Scrambling, FEC, Encryption, Decryption) Radio Control Register and Radio Calibration Bit Detector MAC State Machine Digitally Controlled Oscillator 10:1 Divider FDCO/10 IQ Modulator PGC DPA DAC DAC RC Oscillator RX FDCO Antenna (optional impedance matching circuits) Complementary Dispersive Delay Line DS1804C (CDDL) TxRx FDCO+ RX FDCO- TX TX FDCO- Digital FDCO+ TxB LNA SMIX VGA COMP COMP VDDA DilO1 DilO2 DilO3 DilO4 VSSD PowerUp Reset VDDD VDDCap µCVccExt µCReset µCIrq SpiClk SpiSsn SpiRxD SpiTxD VSSD VSSA AGCCap CDV

4 Absolute Maximum Ratings

5 Nominal Conditions

Nominal conditions are as specified below, except otherwise specified: + Reference design (for measurement purposes only) has been used. See Reference Design on page 33. + Tjunct = 30° C + VSSA = VSSD = GND + VDDA = VDDD = 3.0 V + Transmission/reception @ 1 Mbps and up/down chirp mode. + Raw data mode: no CRC, no FEC, no encryp- tion, no bit scrambling. + BER = 0.001 during receive period. + RF output power during transmit phase = 6.3 mW (+8 dBm) EIRP m easured during continu- ous transmission. + All RF ports are matched according to this spec- ification. + For range measurement, two identical nanoNET systems equipped with antennae representing 1.6 dBi gain have been used. Antennae with vertical E-polarization and omnidirectional hori- zontal radiation pattern have been used. + Outdoor (open space) range measurement was performed on flat terrain, without vegetation higher than 0.2 m above ground, and without visible obstacles and other objects that could reasonably influence measurement results. Antennae for both nanoNET systems have been located 1.5 m above ground. + Indoor range measurement was performed inside typical European office building where both nanoNET systems were located on the same floor. + All RF powers (TX output power, RX sensitivity, etc.) are measured on the IC terminals (pins) under impedance matched conditions. Table 2: Absolute maximum ratings Parameter Valuea a. It is critical that the ratings provided in Absolute Maximum Ratings be carefully observed. Stress exceeding one or more of these limiting values may cause permanent damage to the device. Units Item Maximum received power -20 dBm 5.1 Temperatures 5.2 Operating temperature (operating ambient temperature range) +85 °C 5.3 Operating junction temperature (operating junction temperature range in TX mode) +95 °C 5.4 Operating junction temperature (operating junction temperature range in RX mode) +90 °C 5.5 Storage temperature (storage temperature range) +125 °C 5.6 Reflow solder temperature (lead-free package) +242 °C 5.7 Total power dissipation 450 mW 5.8 Supply voltage (VDDA, VDDD) 3.6 V 5.9

6 Pin Connections (MLF44 7X7 mm)

Figure 4: nanoNET TRX (MLF44) pin connections Note: The pinning of the nanoNET TRX Transceiver described in this datasheet includes a 44 pin package. See Package Dimensions on page 23.

7 Pin Description

Table 3: nanoNET TRX Transceiver (NA1TR8) pin description Pin Name Type Description 1 VDDA – Power supply for analog part. 2 Xtal2B Input Input for 32.768 kHz quartz oscillator. 3 Xtal2A Input Input for 32.768 kHz quartz oscillator. 4 Xtal1A Input Input for 16 MHz reference quartz oscillator. 5 Xtal1B Input Input for 16 MHz reference quartz oscillator.

6 TxRx Output

External power amplifier control pin. Allows the use of an exter- nal amplifier. When activated by the register RfTxExtPampE- nOutEn, this pin goes to low during TX mode. During non- transmit cycles, it has high-impedance. When not activated, it always has high-impedance. 7 VSSD – Ground (digital). 8 µCIrq Output Interrupt request to external microprocessor. 9 µCReset Output Reset for external microprocessor. VSSD 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 VDDA Xtal2B Xtal2A Xtal1B VSSD µClrq µCReset SpiSsn VDDDCap TxRx VDDA IfInN1 IfInP1 V SSA IfInP2 AFCCap AGCCap PowerUpReset µCVccExt VDDD VSSD SpiTxD SpiClk SpiRxD DiIO2 DiIO3 DiIO4 VSSD VDDD DiIO1 VDDA VSSA VSSA TxA TxB RxA RxB V SSA IfOutN IfOutP VSSA Xtal1A IfInN2 IfOutN NA1TR8 AT46205-1 A41T6886

452 DVX

nanoNET TRX (NA1TR8)

10 SpiSsn Input

Serial Peripheral Interface Slave Select (low active) is externally asserted before the microcontroller (master) can exchange data with the nanoNET TRX IC. Must be low before data transactions and must stay low for the duration of the transaction.

11 VDDDCap –

VDDD blocking capacitor pad used for blocking the internal digital power supply by at least one 100nF capacitor connected to VSSD. 12 VDDD – Power supply for digital part. 13 VSSD – Ground (digital). 14 SpiTxD Output Serial Peripheral Interface Transmit Data (MISO).

15 SpiClk Input

Serial Peripheral Interface Clock is generated by the microcon- troller (master) and synchronizes data movement in and out of the device through the SpiRxD and SpiTxD respectively. 16 SpiRxD Input Serial Peripheral Interface Receive Data (MOSI).

17 DiIO1 Input/

Output Digital Input or Output (programmable), line 1.

18 DiIO2 Input/

Output Digital Input or Output (programmable), line 2.

19 DiIO3 Input/

Output Digital Input or Output (programmable), line 3.

20 DiIO4 Input/

Digital Input or Output (programmable), line 4. Note: 32.768 kHz clock operating on this pin after reset/power up. 21 VSSD – Ground (digital). 22 VDDD – Power supply for digital part. 23 µCVccExt Output Power supply for external microprocessor

24 Power

UpReset Input Power up reset line. 25 VSSD Input Ground (digital). 26 AGCCap – Capacitor for AGC. 27 AFCCap – Capacitor for AFC.

28 IfInN2 Input IF Input (channel 2, down-chirp) - connected to port B of Comple-

mentary Dispersive Delay Line (CDDL), line N.

29 IfInP2 Input IF Input (channel 2, down-chirp) - connected to port B of Comple-

mentary Dispersive Delay Line (CDDL), line P . 30 VSSA – Ground (analog). Table 3: nanoNET TRX Transceiver (NA1TR8) pin description Pin Name Type Description

31 IfInP1 Input IF Input (channel 1, up-chirp) - connected to port C of Comple-

mentary Dispersive Delay Line (CDDL), line P .

32 IfInN1 Input IF Input (channel 1, up-chirp) - connected to port C of Comple-

mentary Dispersive Delay Line (CDDL), line N. 33 VDDA – Power supply for analog part.

34 IfOutP Output IF Output - connected to port A of Complementary Dispersive

Delay Line (CDDL), line P.

35 IfOutN Output IF Output - connected to port A of Complementary Dispersive

Delay Line (CDDL), line N. 36 VSSA – Ground (analog). 37 RxB Input Receiver input. 38 RxA Input Receiver input. 39 VSSA – Ground (analog). 40 TxB Output Transmitter output. 41 TxA Output Transmitter output. 42 VSSA – Ground (analog). 43 VSSA – Ground (analog). 44 VDDA – Power supply for analog part. Table 3: nanoNET TRX Transceiver (NA1TR8) pin description Pin Name Type Description

8 Electrical Specifications

8.1 General DC Parameters

Table 4: General DC parameters Parameter Min Typical Max Unit Operating frequency range 2400 2441.750 2483.5 MHz Supply voltage range VDDA ≅ VDDD 2.4 3.0 3.6 V Modulation method – Chirp – – Operating temperature range -40 +25 +85 °C Supply currenta a. Under nominal conditions, e xcept otherwise specified. Power down (Internal Real Time Clock Active) – 1.5 4 µA Power up – 150 200 µA Standby – 2.4 2.6 mA Ready – 9.6 10.5 mA RX (up/down) – 35 – mA TX (Pout = +8 dBm) – 82 – mA Supply Voltage VDDA supply voltage 2.4 3 3.6 V VDDD supply voltage 2.4 3 3.6 V VIL (low level input voltage)b b. Given only for V dd = 3.0 to 3.6 -0.3 – 0.8 V VIH (high level input voltage)b 2.0 – VDDD + 0.3 V VOL (low level output voltage) – – 0.4 V VOH (high level output voltage) 2.4 – – V IOH (high output current) -2 – – mA IOL (low output current) 2 – – mA

8.2 Transmitter (TX) Parameters

Under nominal conditions unless specified. See Nominal Conditions on page 7. Table 5: Transmitter (TX) parameters Parameter Min Typical Max Unit Transmitter nominal output powera a. The transmitter output power is the average power re lated to the peak envelope power of the chirp wave- form. (Due to shape of the waveform envelope, the measured average power of the chirp is about 1dB smaller than the peak envelope power.) 6 8 – dBm Transmitter output power controlled in steps Dynamic for output power control – 39 – dB Number of steps for output power control – 19 – – Load impedance – 150 – Ω Type of load – Balanced – Transmitter spurious emissionsb (1 GHz ... 12.5 GHz) b. The maximum transmitter output power has to be adjusted to ≤ 8 dBm to secure from overdrive. – – -80 dBm/Hz Transmitter carrier suppression – -20 – dBc Carrier frequency – 2441.750 – MHz Carrier frequency accuracy -0.5 ± 0.275 +0.5 MHz Chirp sample frequency – 244.175 – MHz Reference quartz oscillator Quartz operating frequency – 16 – MHz Recommended accuracy – ± 50 – ppm Maximum equivalent serial resistance of the quartz resonator – – 50 Ω Load capacitance of quartz resonator – 27 – pF

8.3 Receiver (R X) Parameters

Under nominal conditions unless specified. See Nominal Conditions on page 7. Note: The measurement results provided in this table were reached by using CDDL. For information on the CDDL, refer to the Complementary Dispersive Delay Line Datasheet. Table 6: Receiver (RX) parameters Parameter Min Typ Max Unit Receiver sensitivity @ 1 Mbps – -92 – dBm Receiver sensitivity @ 2 Mbps – -86 – dBm Input impedance @ 2.44 GHza a. Simulated results. – 7–j56 – Ω Type of input – Balanced – – Center frequency – 2441.75 – MHz Gain from receiver input up to input to dis- persive delay line (CDDL)a – 64 – dB LO frequency – 2691.75 – MHz LO frequency accuracy -0.5 ± 0.275 0.5 MHz LO rejection noise PRX-LO @ LNA input pin – – -40 dBm Programmable frequency stepb b. The minimum change frequency of the LO. – ± 500 – kHz IF frequency (center) – 250 – MHz IF frequency bandwidth (-3 dB)a (determined by CDDL) 90 – – MHz IF output impedance (balanced) @ 250 MHza – 100 – Ω Type of IF output – Balanced – – Impedance of IF input 1 (balanced) @ 250 MHza – 1.6 – kΩ Impedance of IF input 2 (balanced) @ 250 MHza – 1.6 – kΩ Type of IF1, IF2 input – Balanced – – Maximum received power – – -20 dBm

8.4 Digital Interface Parameters

Under nominal conditions unless specified. See Nominal Conditions on page 7.

8.5 Power Management and Sleep /Wake-Up Circuitry Parameters

Under nominal conditions unless specified. See Nominal Conditions on page 7. Table 7: Digital sensor/actuator interface parameters Parameter Value Unit Number of independent digital interfacesa a. At Pin number 4 (DilO4), 32.768 kHz clock operating after reset/power up.

4 Number

Width of each interface 1 bit Direction Programmable – Type In/Out (bi-directional, open-drain with pull-up) – Table 8: Power management and sleep/wake-up circuitry parameters Description Min Typical Max Unit Real Time Clock (RTC) Quartz operating frequency – 32.768 – kHz Recommended accuracy – ± 50 – ppm Load capacitance of quartz resonator – 12.50 – pF Maximum equivalent serial resistance of quartz resonator – – 50 kΩ RTC register length – 48 – bit Epoch date – 01.01.1970 – Date Battery monitor Battery monitor voltage 2.4 2.7 3.6 V Basic dynamic performance (Note: Values in this section are simulation results only) Switch time from TX to RX (from Ack to Data mode) – 24 – µs Switch time from TX to RX (from Data to Ack mode) – 8 – µs Switch time from RX to TX (from Ack to Data mode) – 24 – µs Switch time from RX to TX (from Data to Ack mode) – 8 – µs

8.6 Interface to Digital Controller Parameters

Under nominal conditions unless specified. See Nominal Conditions on page 7. Note: Level translator is required for 5V logic level microcontroller. Turn-on time TX (user command received via SPI and begin of packet transmission) – 24 – µs Turn-on time RX (user command received via SPI and begin of packet reception) – 6 – µs Startup Time for 16 MHz XTAL until sta- ble frequency generation 1.5 – 5 ms Calibration time – .2 – ms Table 9: Interface to digital controller parameters Symbol Description Min Typical Max Unit Notes µCVccExt High current output / high impendance Voltage @ 10mA load VDD - 100 VDD - 20 VDD mV Maximum current output = 10mA / high impedance mode µCReset Push-pull, tristate – – – V See footnotea µCIRQ Push-pull – – – V See footnotea . SpiRxD SpiClk, SpiSSn Input – – – V See footnotea SpiTxD Open-drain or push-pull – – – V See footnotea Table 8: Power management and sleep/wake-up circuitry parameters Description Min Typical Max Unit

9 Timing Diagrams

Time values in the following diagrams are based on the values as shown in Power Management and Sleep/ Wake-Up Circuitry Parameters on page 14.

9.1 Switch Time from TX to RX (from Ack to Data mode)

The switch time from TX to RX (from Ack to Data mode), tTxRxAckData, is 24 µs. Figure 5: Switch time from TX to RX (from Ack to Data mode)

9.2 Switch Time from TX to RX (from Data to Ack mode)

The switch time from TX to RX (from Data to Ack mode), tTxRxDataAck, is 8 µs. Figure 6: Switch time from TX to RX (from Data to Ack mode)

9.3 Switch Time from RX to TX (from Ack to Data mode)

The switch time from RX to TX (from Ack to Data mode), tRxTxAckData, is 24 µs. Figure 7: Switch time from RX to TX (from Ack to Data mode) Rx A/B Ack Packet tTxRxAckData Data Packet Tx A/B . . . . . Rx A/B Data Packet tTxRxDataAck Ack Packet Tx A/B . . . . . Tx A/B Ack Packet tRxTxAckData Data Packet Rx A/B . . . . .

9.4 Switch Time from RX to TX (from Data to Ack mode)

The switch time from RX to TX (from Data to Ack mode), tRxTxDataAck, is 8 µs. Figure 8: Switch time from RX to TX (from Data to Ack mode)

9.5 Turn-On Time TX

The Turn-on time for TX, t TxTO, from the reception via SPI of a user command to the beginning of packet transmission is 24 µs. Figure 9: Turn-on time TX: time = tTxTO Tx A/B Data Packet tRxTxDataAcl Ack Packet Rx A/B . . . . . Tx A/B Command requesting packet transmission tTxTO Packet transmission SpiRxD SpiClk Csn . . . . . .

9.6 Turn-On Time RX

The Turn-on time for RX, t RxTO, from the reception via SPI of a us er command to the beginning of packet reception is 6 µs. Figure 10: Turn-on time RX: time = tRxTO 9.7 16 MHz Crystal Start-Up Time The start-up time for the quartz oscillator until it reaches a stable frequency generation is within a range of 1.5 to 5 ms. See Power Management and Sleep/Wake-Up Circuitry Parameters on page 14.

9.8 LO Frequency Calibration Time

The time for the Local Oscillator frequency calibration, is approximately 2 ms. See Power Management and Sleep/Wake-Up Circuitry Parameters on page 14.

9.9 SPI Bus Read and Write Timing

The following timing diagrams shows the read and write timing of the SPI bus. For more details, see nanoNET TRX Serial Peripheral Interface Specifications. Figure 11: SPI bus write timing Rx A/B Command requesting packet reception tRxTO Packet reception SpiRxD SpiClk Csn . . . . . . tSRxD tLC tHC tSS Bit 0 tHRxD Bit N tHS ... ... ...SpiClk SpiRxD SpiSsn

nanoNET TRX Transceiver (NA1TR8) Datasheet Page 20 NA-03-0111-0239-2.09 © 2007 Nanotron Technologies GmbH. Figure 12: SPI bus read timing The following table shows the SPI timing values. Table 6: SPI timing values Parameter Min Max Comment fmax – 16 MHz SpiClk tLC 22 ns – Low time SpiClk tHC 22 ns – High time SpiClk tSS 10 ns – SpiSsn Setup tHS 5 ns - SpiSsn Hold tSRxD 10 ns – SpiRxD Setup tHRxD 5 ns – SpiRxD Hold tPDTxD – 18 ns SpiTxD Propagation Delay Drive tHTxD 2 ns – SpiTxD Hold tPTxDZ - 18 ns SpiTxD Propagation Delay High Impedance tPDTxD Bit 0 tHTxD / tPTxDZ Bit N tHS SpiClk SpiTxD SpiSsn ... ... ... ... ... ...

10 Output Power Control

The output power of the nanoNET TRX Transceiver can be set typically in a range of between -27 dBm to + 8 dBm. The following graphs show the range of possibilities. Nominal conditions except power supply voltage and RF output power. Figure 13: nanoNET TRX output power (pout[dBm] by register value) Figure 14: Total current consumption (IDDA[mA] by register value)

nanoNET TRX Transceiver (NA1TR8) Datasheet © 2007 Nanotron Technologies GmbH. NA-03-0111-0239-2.09 Page 23 The following shows the dimensions of MLF44 44 Pin 7x7 lead-free package. Figure 16: MLF44 7x7 package dimensions Table 10: Package dimensions labels (unless specified, dimensions are in millimeters) Common Dimensions Label Minimum Nominal Maximum A 7.00 B 4.55 4.70 4.85 C 4.55 4.70 4.85 D C / 2 E 7.00 G 0.18 0.23 0.30 H 0.50 M 0.80 0.9 1.00 N – 0.65 0.80 P 0.00 0.02 0.05 Q 0.25 A B D C G H M N QP Seating Plane First Angle Projections E

12 Tape and Reel Information

An embossed tape and reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the shipping container for the nanoNET TRX Transceiver (NA1TR8) and requires a min- imum of handling. The antistatic/conductive tape provides a secure cavity for the product when sealed with the peel-back cover tape.

12.1 Reel Dimensions

Figure 17: Reel dimensions

12.2 Tape Dimensions

Figure 18: Tape dimensions Reel Diameter Units Per Reel Reel and Hub Size1 1. Reel and hub size = 13 inch reel with 4 inch hub. 13” 2,500 13/4 Package Type Number of Leads Nominal Package Size Carrier Tape Width Carrier Tape Pitch Leader/Trailer Length1 1. The device loading orientation is in compliance with EIA-481. QFN (MLFP) 44 7 x 7 x 0.9 mm 16 mm 12 mm EIA 330 (13.00) Includes flange distortion at outer edge:19.4 (0.764) Measured at hub: 16.4 (0.646) nom. Hub diameter Measured at hub: 22.4 (0.882) max. Arbor hole diameter: 13.0 (.512) Access hole at slot location: 40 (1.575) min. Tape slot in core for tape start: 2.5 (0.098) min. width 10 (0.394) min. depth 20.2 (0.795) min 1.5 (0.59) min. Note: Dimensions are in millimeters (inches are in brackets for reference purposes only). Label Example Label User direction of feed Tape width 16 mm nominal Carrier pitch 12 mm

Ordering Information

nanoNET TRX Transceiver (NA1TR8) Datasheet © 2007 Nanotron Technologies GmbH. NA-03-0111-0239-2.09 Page 25 To order the product described in this datasheet, use the following information. Part Number Package Type Package Quantity RoHS Compliant1 1. The RoHS directive is “The Restriction of Hazardous Substances in Electrical and Electronic Equipment (ROHS) Directive (2002/95/EC)”. The Directive aims to protect human health and the environment by restricting the use of certain hazardous substances in new equipment; and it complements the WEEE Directive. NA0108B MLF 44 7x7 mm Tape and reel 16 x 12 type 2,500 pieces per tape Yes. A certificate of RoHS compliance is available from Nanotron Technologies on request.

nanoNET TRX Transceiver (NA1TR8) Datasheet © 2007 Nanotron Technologies GmbH. NA-03-0111-0239-2.09 Page 27 A1 Sample Application A1.1 Recommended Circuitry The following application is an example of the nanoNET TRX Transceiver used with a tempera- ture measurement and control device. Figure 19: Example application showing recommended circuitry VDDA Xtal2B Xtal2A Xtal1A Xtal1B TxRx IfInN1 IfInP1 VSSA IfInP2 IfInN2 VDDA VSSA VSSA TxA TxB VSSA RxA RxB VSSA IfOutN IfOutP VDDD VSSD SpiTxD SpiClk SpiRxD DilO1 DilO2 DilO3 DilO4 VSSD VDDD VCC VDDA µCVccExt PowerUpReset AGCCap AFCCap Port A Port B Port C CDDL Microcontroller nanoNET TRX (NA1TR8)VSSD µCIrq µCReset SpiSsn VDDDCap VCC Actuator Temperature Shaded area is recommended circuitry VSSD 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 VCC VDDA Sensor Temperature Control Unit Note: Pin 20 (DilO4) 32.768 kHz clock operating after reset/power up. VDDA Bandpass Filter Balun 1804

nanoNET TRX Transceiver (NA1TR8) Datasheet Page 28 NA-03-0111-0239-2.09 © 2007 Nanotron Technologies GmbH. A1.2 Recommended PCB Layout for RF Part Figure 20: Recommended PCB layout for RF part: schematic 1 of 1

nanoNET TRX Transceiver (NA1TR8) Datasheet © 2007 Nanotron Technologies GmbH. NA-03-0111-0239-2.09 Page 39 A2.1 Reference Design Bill of Materials Table 11: Reference design bill of materials Part Manufacturer Distributor Description Label Value Qty Package Company Product Number Company Order Number Resistors R1 100k 1 0402 PHYCOMP 2322 705

70104 Farnell 195-273

R2, R4 10k 2 0402 MEGGITT CRG0402J1 0K-10 Farnell 389-8659 RA1 2k2 1 4R_ARRAY PHYCOMP ARV341 -2K2-5 Farnell 325-7447 RA2 1M 1 4R_ARRAY PHYCOMP ARV341 -1M-5 Farnell 325-7605 RA3 100k 1 4R_ARRAY PHYCOMP ARV341- 100K-5 Farnell 325-7540 RA4 220R 1 4R_ARRAY PHYCOMP ARV341 -220R-5 Farnell 325-7381 Capacitors C15, C16 4.7pF 2 0402 PHYCOMP 2238 869

15478 Farnell 301-9147

C21, C22 5.6pF 2 0402 Epcos B37923K50 50C660 C11 10pF 1 0402 AVX CM05CG10 0D50AH Farnell 578-058 (abgek.) C20 15pF 1 0402 Mira 8210/150 C8, C9 22pF 2 0402 PHYCOMP 2238 869

15229 Farnell 301-9184

C10, C13 27pF 2 0402 Mira 8210/270 C1, C7, C18 100pF 3 0402 PHYCOMP 2238 869

15101 Farnell 301-9226

C12 470pF 1 0402 PHYCOMP 2238 587

15618 Farnell 301-9366

C2, C6 1nF 2 0402 PHYCOMP 2238 787

15636 Farnell 301-9380

C3 10nF 1 0402 PHYCOMP 2238 587

15623 Farnell 301-9275

C4, C5 C14, C17 C19, C23 C24, C26 C27, C28 100nF 10 0402 PHYCOMP 2238 787

19849 Farnell 301-9482

C25 10uF/10V 1 3216 AVX TAJA106K0 10R Farnell 197-130 Inductors L1 4.7nH 1 0402 Würth 744784047 Würth 744784047 L2, L5 2.7nH 2 0402 Würth 744784027 Würth 744784027 L3 6.8nH 1 0402 Würth 744765068 Würth 744765068 L4 5.6nH 1 0402 Würth 744784056 Würth 744784056

nanoNET TRX Transceiver (NA1TR8) Datasheet Page 40 NA-03-0111-0239-2.09 © 2007 Nanotron Technologies GmbH. L6 47nH 1 0402 Würth 74478447 Würth 74478447 L7 742 792 69 1 0603 Würth 74279269 Würth 74279269 Balun BAL1 50R:150R 1 BAL0805 Würth 748420245 Würth 748420245 Band pass filter BP1 748351124 1 WE-BPF1008 Würth 748351124 Würth 748351124 SMD antenna ANT1 WE-ANT20245 1 WE_ANT20245 Würth 7488920245 Würth 7488920245 CDDL DDL1 CDDL_1804 1 13.3 X 6.5 Nanotron DS1804C Nanotron DS1804C Quartz Q1, Q3 32.768kHz 2 31SMX SMI “31M327- 12.5pF,20p pm” DEQTRON 31M327 12.5pF, 20ppm Q2 16.0MHz 1 32SMX SMI “32 M 160- 32 ,-40 ..+85°” DEQTRON

32 M 160

-32, -40 ..+85° Surface mount shield: 27x27x5.08 SHIELD1 SHIELD_BMIS _103 1 BMIS-103 Laird Technologies BMIS-103 Laird Technolo- gies BMIS-103 surface mount coin cell holder: 20mm BAT1 BAT_CLIP20 1 BAT_CLIP20 Keystone 1061 Farnell 302-9773 nanoNET transceiver IC1 NA1TR8 1 VFQFPN7X7 Nanotron NA1TR8 Nanotron NA0108B 8-bit microcontroller IC2 ATMEGA16L 1 MLF44 ATMEL Atmega 16L-8MI MSC Atmega 16L-8MI Connectors X1 SMA-f 1 JOHNSON _JACK_GND_2 VITELEC 142-0701 -851 RS Components 363-4690 X2 06X1 1 CON_TMS _06X1_L_HEA SAMTEC TMS-106 -03-G-S_RA SAMTEC TMS-106- 01-G-S_RA X3 CON_DF17 _40P_HEA 1 CON_DF17 _40P_R05 _HEA HIROSE DF17A(2.0) -40DP -0.5V(50) MSC DF17A(2.0) -40DP -0.5V(50) X4 05X1 1 CON_TMS _05X1_L_HEA SAMTEC TMS-105 -03-G-S_RA SAMTEC TMS-105 -01-G-S_RA X5 04X1 1 CON_TMS _04X1_L_HEA SAMTEC TMS-104 -03-G-S_RA SAMTEC TMS-104 -01-G-S_RA X6 02X1 1 CON_TMS _02X1_L_HEA SAMTEC TMS-102 -03-G-S_RA SAMTEC TMS-102- 01-G-S_RA Table 11: Reference design bill of materials Part Manufacturer Distributor Description Label Value Qty Package Company Product Number Company Order Number

nanoNET TRX Transceiver (NA1TR8) Datasheet © 2007 Nanotron Technologies GmbH. INTERNAL NA-03-0111-0239-2.09 Page 41 A3 Abbreviations µA Microampere (unit of electrical current) µC Microcontroller µCIrq External microprocessor interrupt request µCReset External microprocessor reset µCVcc External microprocessor battery supply voltage µCVccExt External microprocessor power supply voltage µF Microfarad (unit of electrical capacitance) µH MicroHenry (unit of electrical resistance) µs Microseconds (unit of time) Ω Ohm (unit of electrical resistance) AC Alternating Current Ack Acknowledgement packet type ADC Analogue to Digital Converter ADD Actor/sensor AFC Automatic Frequency Control AGC Automatic Gain Control BB a t t e r y B Frequency bandwidth BA Balun (See BALUN) BALUN Balun Unbalanced BCH Bose-Chaudhuri-Hochquenghem BER Bit Error Rate BOM Bill of Materials bps Bits per second (unit of data throughput) C Capacitor C Power of signal carrier °C Celsius (unit of temperature) CCITT Comité Consultatif International Téléphonique et Télégraphique CDDL Complementary Dispersive Delay Line C/I Carrier to Interference Ratio Clk Clock CRC Cyclic Redundancy Check CMMR Common Mode Rejection Ratio CMOS Complementary Metal Oxide Semiconductor CS Chip Select CSMA Carrier Sense Multiple Access CSMA/CA Carrier Sense Multiple Access/Collision Avoidance CSS Chirp Spread Spectrum CSS Mode Chirp Spread Spectrum Mode DAC Digital to Analog Converter Data Data packet type dB Decibel (ratio between two values, such as signal power, voltage, or current levels in logarithmic scale) dBi Gain referenced to isotropic antennae DBO-CSS Differentially Bi-Orthogonal Chirp Spread Spectrum dBm dB referenced to one milliwatt (10 -3W = 1mW) dBr Decibels relative to reference level DC Direct Current DiIO Digital Input/Output DPA Differential Power Amplifier DPD Differential Peak Detector DUT Device Under Test E b Energy of bit EIRP Effective Isotropic Radiated Power ESD Electrostatic Discharge FCD Folded Chirp Detector FCM Folded Chirp Mixer FDMA Frequency Division Multiplex Access FEC Forward Error Correction FET Field Effect Transistor FHSS Frequency Hopping Spread Spectrum FIFO First In First Out FS Full Scale GBWP Gain Bandwidth Product GHz Gigahertz (unit of frequency) GND Ground HBM Human Body Model II n l i n e IC Integrated Circuit IEC International Electrotechnical Commission IF Intermediate Frequency I/O Input/Output I OH Output current high IOL Output current low IRQ Interrupt request IQ In-phase, Quadrature ISM Industrial Scientific Medical ISO International Organization for Standardization kΩ KiloOhms (unit of electrical resistance) kHz KiloHertz (unit of frequency) kpbs Kilobits per second (unit of data throughput) L Inductance LNA Low Noise Amplifier LO Local Oscillator LPF Low Pass Filter LSB Least Significant Bit ΜΩ MegaOhms (unit of electrical resistance) mA Milliampere (unit of electrical current) Mbaud Megabauds Mbps Megabits per second (unit of data throughput) MAC Medium Access Control MHz MegaHertz (unit of frequency) MISO Master In, Slave Out MIX Mixer MLF Micro Lead Frame Package MOD Modulator MOSI Master Out Slave In MUX Multiplexer mW milliwatt (unit of power) NC Not Connected nF Nanofarad (unit of electrical capacitance) nH NanoHenry (unit of electrical inductance) N o Power spectral density of thermal noises ns Nanosecond (unit of time) OEM Original Equipment Manufacturer OSC Oscillator OP Operational Amplifier OTA Operational Transconductance Amplifier PA Power Amplifier PAE Power Added Efficiency PAMP Power amplifier PDK Process Development Kit PEP Peak Envelope Power pF Picofarad (unit of electrical capacitance) PFD Phase Frequency Detector PLL Phase Locked Loop Pout Power Out ppm parts per million PCB Printed Circuit Board PGA Programmable Gain Amplifier PGC Power Gain Control POMD Peak Over Mean Detector PSRR Power Supply Rejection Ratio PTAT Proportional to Absolute Temperature Q Quadrature QFN Quad Flat No-lead RR e s i s t o r RF Radio Frequency RFID Radio Frequency IDentification ROM Read Only Memory RSSI Radio Signal Strength Indicator RTC Real Time Clock RX Receiver S Switch/button SAR Successive Approximation Register SAW Surface Acoustic Wave SDS-TWR Symmetrical Double Sided Two Way Ranging SLNA Symmetric Low Noise Amplifier SMIX Symmetric Mixer SNR Signal to Noise Ratio SPI Serial Peripheral Interface SpiClk Serial peripheral interface Clock SpiSsn Serial peripheral interface Slave select SpiRxD Serial peripheral interface Receive Data SpiTxD Serial peripheral interface Transmit Data SRAM Static RAM SSB Single Side Band t Time constant T Duration time of the chirp waveform TBD To Be Determined TDMA Time Division Multiple Access T junct Temperature of junction THD Total Harmonic Distortion TRL Transmission Line TRX Transceiver TTL Transistor-Transistor Logic TX Transmitter

nanoNET TRX Transceiver (NA1TR8) Datasheet Page 42 NA-03-0111-0239-2.09 INTERNAL © 2007 Nanotron Technologies GmbH. V Volts (unit of electrical potential) VIH Input voltage for High level VIL Input voltage for Low level VOH Output voltage for High level VOL Output voltage for Low level VCA Voltage Controlled Amplifier VCC Battery supply voltage VCO Voltage Controlled Oscillator VDDA Power supply for analog part VDDD Power supply for digital part VFQFPN Very thin Fine pitch Quad Flat Pack Nolead Pack- age VGA Variable Gain Amplifier VSSA Analog ground VSSD Digital ground VSWR Voltage Standing Wave Ratio XTAL Crystal XCO Xtal (crystal) Controlled Oscillator Special Symbols CDS Drain-source capacitance CGD Gate-drain capacitance CGS Gate-source capacitance Cr Feedback capacitance DD r a i n EG Energy gap fT Transit frequency G Gate, Gradient GaAs Gallium-Arsenide Ge Germanium g m Short-circuit forward transconductance H Hybrid parameter IDSS Drain current with V GS=0 k Boltzmann constant, 1.38·10 -23J/K or stability factor q Electron charge, 1.602·10 -19As rDS Differential drain-source-resistance RMS Root Mean Square Rth Thermal resistance in K/W S Source Sij Scattering parameters Si Silicon TP e r i o d Tj Junction Temperature TC Temperature coefficient, e.g. TK(IDSS) Vpp Peak-to-Peak Voltage VD Diffusion voltage VDS Drain-Source voltage VGS Gate-Source voltage VT Thermal voltage, VT=kT/q VTO Threshold voltage, Turn-on voltage aA n g l e b Current gain d Partial derivative e o Dielectric constant of a vacuum εr Dielectric constant relative to a vacuum εreff Effective relative dielectric constant G Reflection coefficient µo Permeability of a vacuum µo Permeability relative to a vacuum m Charge carrier mobility w Angular frequency D Difference SS u m

Revision History

nanoNET TRX Transceiver (NA1TR8) Datasheet © 2007 Nanotron Technologies GmbH. NA-03-0111-0239-2.09 Page 43 Version Date Description/Changes 1.00 2003-10-11 Initial Release from internal document. 1.01 2003-12-16 Updated images, chip designations on page 19, 20. 1.02 2004-01-28 Bill of Materials table updated and package dimensions added. 1.03 2004-03-15 New template added, BOM updated, Example Application updated. 1.04 2004-04-08 Example application diagram updated, BOM updated, minor textual changes. Title changed to Datasheet. 2.00 2004-08-09 Pinning has changed from 48 pins to 44 pins. The Pin diagram and descriptions have been changed accordingly. Layout suggestion of CDDL connection added. Current consumption for TX changed to 78 mA. Other minor changes. 2.01 2004-09-10 Datasheet updated to latest data. Minor textual changes. Document sign-off table added. 2.02 2004-09-17 Example application updated. BOM table updated. 2.03 2004-11-05 Block diagram updated. 2.04 205-03-25 Parameters in this version for NA2TR1 chip. Nominal Conditions section added. General description updated. Modifications made to block diagram. Naming of Pin 2 and 3 corrected. Content of Absolute Maximum Ratings table modified. All parameters checked and reviewed. Example Application diagrams improved and updated. Both Bill of Materials tables modified. New section 10 added. Document status table added. Document status added. 2.05 2005-04-07 Chip values updated for NA1TR8. New feature: Programmable clock output at digital output. 2.06 2005-07-15 Template updated; Nominal conditions clarified (last point added); block diagram modified; term quartz oscillator used throughout; 32.768 kHz used throughout; V DDD, VDDA supply voltage typical added; Item 8.2.3 changed; timing diagrams added; output power graphs added; example application simplified and BOM deleted; new schematics and layout for recommended PCB layout for RF and IF part; RoHs directive data added; tape and reel information added; ordering infor- mation added; reference design appendix added. Note: The typical value for Item 8.1.10 supply current TX (Pout = +8 dBm) has been updated from 78 mA to 82 mA. 2.06 2005-07-15 Item 7.11 updated - description of pin clarified; clock signal provided by chip clari- fied; error corrected in SPI bus read timing diagram (SpiTxD); 2.07 2005-10-21 Minor textual changes; clarification of clock signal that can be provided by the chip (i.e., 32.768 kHz or from 125 kHz to 16 MHz); description of pin 11 VDDDCAP clarified; SpiTxD changed to SpiRxD in both Turn-on time RX and TX figures; error in SPI bus read timing figure fixed; Pin TxRx purpose clarified and elaborated; company address updated. 2.08 2007-02-20 Minor textual changes. 2.09 2007-12-20 Template changes; addition of chip summary section.

About Nanotron Technologies GmbH nanoNET TRX Transceiver (NA1TR8) Datasheet Page 44 NA-03-0111-0239-2.09 © 2007 Nanotron Technologies GmbH. About Nanotron Technologies GmbH Nanotron Technologies GmbH develops world-class wireless products for demanding applica- tions based on its patented Chirp Spread Spectrum – an innovation that guarantees high robust- ness, optimal use of the available bandwidth, and low energy consumption. Since the beginning of 2005, Nanotron's Chirp technolo gy has been a part of the I EEE 802.15.4a draft standard for wireless PANs which require extremely robust communication and low power consumption. ICs and RF modules include the nanoNET TRX, the nanoLOC TRX, and ready-to-use or custom wireless solutions. These include, but are not limited to, industrial monitoring and control applica- tions, medical applications (Active RFID), security applications, and Real Time Location Systems (RTLS). nanoNET is certified in Europe, Unit ed States, and Japan and supplied to customers worldwide. Headquartered in Berlin, Germany, Nanotron Te chnologies GmbH was founded in 1991 and is an active member of IEEE, the ZigBee alliance, and ISA-SP100. Further Information: For more information about this product and other products from Nanotron Technologies, contact a sales representative at the following address: Nanotron Technologies GmbH Alt-Moabit 60

10555 Berlin, Germany

Phone: +49 30 399 954 - 0 Fax: +49 30 399 954 - 188 Email: sales@nanotron.com Internet: www.nanotron.com

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nanoNET TRX Transceiver

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nanoNET TRX Transceiver

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