82HS195 PHILIPS

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Technical content

Philips Components-Signetics 82HS195 JecnNo. |ocoss eve fe: | 82HS195A [sae |roncsrecinin | B2HS195B 16K-bit TTL bipolar PROM DESCRIPTION FEATURES PIN CONFIGURATIONS ‘The 82HS195, 82HS195A and © Low power dissipation: a5yW/bit typ 82HS195B are field-programmable, Aad ti N Package which means that custom patterns are ress access time: aa bt vec immediately avaitable by following the ~ N82HS195: 45ns max id Fay ae Signotics Generic Il fusing procedure. ~ NB2HS195A: 35ns max The 82HS195 devices are supplied with — N&2HS195B: 25ns max “8 pase all outputs at logical High. Outputs are . atl [zy an programmed to a logic Low level at any _° IAPut loading: -250¥A max “Gl fis) ces specified address by fusing a Two Chip Enable inputs a [ay ces programmable matrix. '® On-chip address decoding 2 fy [ia] oF These devices include on-chip decoding No separate fusing pins a fi] oe and 2 Chip Enable inputs for memory High level » Gf fz os expansion. They feature 3-State outputs * Unprogrammed outputs are High level ‘eno [id Hi on for optimization of word expansion in Fully TTL compatible bused organizations. @ Outputs: 3-State Ordering information can be found on» SMD packaging 20-Pin PLCC APackage the following page. as AT A Voc These devices are also processed to (2) (21) ol fr military requirements for operation over as fe fig] avo the miltary temperature range. For au fi an specifications and ordering information | fa ce consult the Signetics Miltary Data | Lac Handbook. nad Fa os OIC BLOCK DIAGRAM MGHO.ON 09 C2 woo vores | P i nes | loccooen Mo aro we se || wio—q oo ‘ourPuT UNS 339

Philips Components-Signetics Memory Products Product Specification 16K-bit TTL bipolar PROM P 82HS195 / 82HS195A / 82HS195B (4096 x 4)

ORDERING INFORMATION

DESCRIPTION ‘ORDER CODE 20-Pin Plastic Dual-in-Line N8cHS196 N, NA2HS191A N, NE2HSI958N 20-Pin Plastic Leaded Chip Carrier Bonpeceae Ne2HS195 A, NE2HS195A A, NE2HS195B A ABSOLUTE MAXIMUM RATINGS Supply voltage [Tag [Storage temperature range | esto vts0 [co | DC ELECTRICAL CHARACTERISTICS, O°C s Taro < +75°C, 4.78V < Voc = 5.25V uMiTs PARAMETER TEST CONDITIONS'? [min | tye? [| Max | unit Input voltage Ve Low’ 08 Vv Vea High* 20 v Ve Clamp Ing =-12mA 42 v Output voltage CEI & CE2 = Low Vou Low lour = 16mA v Vout High lout =-2.0mA v tow Viv= 0.45V 1A igh Vin =5.25V A HiZ state TEI & CE2 = High, Vour = 0.5V “40 yA TEI & CER =High. Vour =5.5V 40 HA Shor circuit TEI & CE2 = Low, Vour = OV, High stored 70 mA [eee ee GET & CER = High, Voc = 5.0V Cw Vw =20V pF Cour Vout = 2.0V pF NOTES: 1. All voltage valuos are with respect to network ground terminal 2: Positive current is defined as into the terminal relerenced 3. Typical values are at Voc = BV, Tare = +25°C. 4. Measured with one output switching from a Logic “1° to a Logie 0" 5. Duration of the short cireuit should not exceed 1 second. 6. Measured with all inputs grounded and all outputs open March 14, 1989 340

Philips Components—Signetics Memory Products Product Specification 16K-bit TTL bipolar PROM Pi 82HS195 / 82HS195A / 82HS195B (4096 x 4) AC ELECTRICAL CHARACTERISTICS Ry = 4700, Ro = 1k, C, = 30pF _0°C < Tan < +75°C, 4.75V < Veo < 5.25V tea Output | Address 45 25 tee Output _ | Chip Enable 25 15 [eo [foun [ovoosene] [Te] [sta] Tots] | NOTES: 1. Typical values are Voc = SV, Tare = +25°C. 2. Tested at an addross cyclo time of 1s. 3. Measured at a delta of 0.5V from Logic Levet with Ry = 75002, Ro = 7500 and G, = SpF. TEST LOAD CIRCUIT Yee ofa ofan oe} az oda otpo = Yee ome] as i o—edas i (CLUDES SCOPE AND Ry iG CAPACITANCE) o—edas pur | | of ar I ol aa « oda my omed ant o—e)ce o—+} vez xo VOLTAGE WAVEFORM ov aooness Wusv ow sto vevacez 150 1sv ~-----w te ten 01-04 wt nz YH Vou tak ores: ‘Alinputs = y= Sos (10% 10 90M) [AIAG pararaors are measured at 15V unless otherwise spect March 14, 1989 341