N2500N

N2500N RENESAS

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry.

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR N2500N SWITCHING N-CHANNEL MOSFET DATA SHEET Document No. D19677EJ1V1DS00 (1st edition) Date Published October 2009 NS Printed in Japan 2009

DESCRIPTION

The N2500N is N-channel MOS Field Effect Transistor designed for DC-DC converter and 2.5 V drive switching applications.

FEATURES

• 2.5 V drive available
• Low on-state resistance R DS(on)1 = 5.8 Ω MAX. (VGS = 4.5 V, ID = 0.25 A) RDS(on)2 = 6.6 Ω MAX. (VGS = 2.5 V, ID = 0.25 A)
• Low input capacitance C iss = 145 pF TYP.
• Small and surface mount package (SC-96)
• Built-in gate protection diode

ORDERING INFORMATION

SC-96 (Mini Mold Thin Type) Note Pb-free (This product does not contain Pb in the external electrode and other parts.) Marking: YA ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS 250 V Gate to Source Voltage (VDS = 0 V) V GSS ±12 V Drain Current (DC) (TA = 25°C) I D(DC) ±0.5 A Drain Current (pulse) Note1 ID(pulse) ±2.0 A Total Power Dissipation (TA = 25°C) P T1 0.2 W Total Power Dissipation (TA = 25°C) Note2 PT2 1.25 W Channel Temperature T ch 150 °C Storage Temperature T stg −55 to +150 °C Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mmt, t ≤ 5 sec Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. PACKAGE DRAWING (Unit: mm) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 –0.06 0.4 +0.1 –0.05 2.8 ±0.2 1.5 0.95 1.9 2.9 ±0.2 0.95 0.65 +0.1 –0.15 1. Gate 2. Source 3. Drain EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain

Data Sheet D19677EJ1V1DS 2 N2500N ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS V DS = 250 V, VGS = 0 V 10 μA Gate Leakage Current I GSS V GS = ±12 V, VDS = 0 V ±10 μA Gate to Source Cut-off Voltage V GS(off) V DS = 10 V, ID = 1.0 mA 0.5 1.0 1.5 V Forward Transfer Admittance Note | yfs | V DS = 10 V, ID = 0.25 A 0.8 S RDS(on)1 V GS = 4.5 V, ID = 0.25 A 4.2 5.8 Ω Drain to Source On-state Resistance Note RDS(on)2 V GS = 2.5 V, ID = 0.25 A 4.3 6.6 Ω Input Capacitance C iss V DS = 10 V, 145 pF Output Capacitance C oss V GS = 0 V, 17 pF Reverse Transfer Capacitance C rss f = 1.0 MHz 5 pF Turn-on Delay Time t d(on) V DD = 125 V, ID = 0.25 A, 7 ns Rise Time t r V GS = 4.5 V, 12 ns Turn-off Delay Time t d(off) R G = 10 Ω 22 ns Fall Time t f 35 ns Total Gate Charge Q G V DD = 200 V, 4.7 nC Gate to Source Charge Q GS V GS = 4.5 V, 0.4 nC Gate to Drain Charge Q GD I D = 0.5 A 2.5 nC Body Diode Forward Voltage Note VF(S-D) I F = 0.5 A, VGS = 0 V 0.82 1.5 V Reverse Recovery Time t rr I F = 0.5 A, VGS = 0 V, 45 ns Reverse Recovery Charge Q rr di/dt = 100 A/ μs 36 nC Note Pulsed TEST CIRCUIT 2 GATE CHARGETEST CIRCUIT 1 SWITCHING TIME PG. RG VGS D.U.T. RL VDD τ = 1 sμ Duty Cycle ≤ 1% τ PG. 50 Ω D.U.T. RL VDD IG = 2 mA VGS Wave Form VDS Wave Form VGS VDS 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10%

Data Sheet D19677EJ1V1DS 3 N2500N TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % 100 120 0 20 40 60 80 100 120 140 160 TC - Case Temperature - °C PT - Total Power Dissipation - W 0.2 0.4 0.6 0.8 1.2 1.4 0 20 40 60 80 100 120 140 160 Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mmt, t ≤ 5 sec TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 0.001 0.01 0.1 0.1 1 10 100 1000 1 ms Single Pulse Power Dissipation Limited PW = 1i00 μs Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mmt R DS(on) Limited GS = 4.5 V) 10 ms ID(pulse) ID(DC) 30 ms 1i 00 mi s VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W 0.1 100 1000 Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mmt Without board Single Pulse PW - Pulse Width - s 100 μ 1 m 10 m 100 m 1 10 100 1000

Data Sheet D19677EJ1V1DS 4 N2500N DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 0.4 0.8 1.2 1.6 02468 1 0 Pulsed VGS = 4.5 V 2.5 V 2.0 V VDS - Drain to Source Voltage - V ID - Drain Current - A 0.0001 0.001 0.01 0.1 0123 VDS = 10 V Pulsed Tch = 150°C 125°C 75°C 25°C −25°C −55°C VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cut-off Voltage - V -75 -25 25 75 125 175 VDS = 10 V ID = 1.0 mA Tch - Channel Temperature - °C | yfs | - Forward Transfer Admittance - S 0.1 0.01 0.1 1 VDS = 10 V Pulsed Tch = −55°C −25°C 25°C 75°C 125°C 150°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - Ω 0.001 0.01 0.1 1 10 Pulsed VGS = 2.0 V 2.5 V 4.5 V ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - Ω 02468 1 0 Pulsed ID = 0.5 A 0.25 A 0.05 A VGS - Gate to Source Voltage - V

Data Sheet D19677EJ1V1DS 5 N2500N DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - Ω -75 -25 25 75 125 175 ID = 0.25 A Pulsed VGS = 4.5 V 2.5 V 2.0 V Tch - Channel Temperature - °C Ciss, Coss, Crss - Capacitance - pF 0.1 100 1000 0.1 1 10 100 1000 VGS = 0 V f = 1.0 MHz Ciss Coss Crss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 100 0.1 1 10 VDD = 125 V VGS = 4.5 V RG = 10 Ω td(on) tf tr td(off) ID - Drain Current - A VDS - Drain to Source Voltage - V 120 160 200 240 0123456 ID = 0.5 A VGS VDS VDD = 200 V 125 V 50 V QG - Gate Charge - nC VGS - Gate to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT IF - Diode Forward Current - A 0.001 0.01 0.1 Pulsed 0 V VGS = 4.5 V VF(S-D) - Source to Drain Voltage - V trr - Reverse Recovery Time - ns 100 1000 0.1 1 10 VGS = 0 V di/dt = 100 A/μs IF - Diode Forward Current - A

• The information in this document is current as of October, 2009. The information is subject to change without notice. For actual design-in, refer to the latest pub lications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electroni cs products. Not all products and/or types are av ailable in every country. Please check with an NEC Electronics sales representative for availability and additional information.
• No part of this document may be copied or reproduced in any fo rm or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights o f third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, expr ess, implied or otherwise, is granted under any patents, copyrights or other intellectua l property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related informati on in this document are provided for illustrative purposes in semiconductor product operation and application ex amples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by cu stomers or third parties arising from t he use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliabili ty and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons ar ising from defects in NEC Electronics produc ts, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified in to the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics pr oducts developed based on a cust omer-designated "quality assurance program" for a specific application. The reco mmended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the qua lity grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automob iles, trains, ships, etc.), traffic cont rol systems, anti-disaster systems, anti- crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospac e equipment, submersible repeaters, nuclear reac tor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics produc ts is "Standard" unless otherwise expr essly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NE C Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales repr esentative in advance to deter mine NEC Electronics' willingness to support a given application. (Note 1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority- owned subsidiaries. (Note 2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). (M8E0909E)